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Infineon Technologies IKQ140N120CH7XKSA1

Part No.:
IKQ140N120CH7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKQ140N120CH7XKSA1.pdf
Description:
IGBT TRENCH FS 1200V 175A TO247
Quantity:
Payment:
Payment
Shipping:
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Inventory:492

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Product details

Overview

IKQ140N120CH7XKSA1 from Infineon is a high-speed 1200 V, 140 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 140 A ultra-fast recovery emitter-controlled diode in a PG-TO247-3-PLUS package. It delivers VCE(sat) = 1.7 V at 25°C, trr = 144 ns, and Qrr = 3.82 µC, enabling high-efficiency hard-switching in industrial UPS, EV charging, and string inverters.

For engineers reviewing the IKQ140N120CH7XKSA1 datasheet, IKQ140N120CH7XKSA1 pinout, IKQ140N120CH7XKSA1 application, or IKQ140N120CH7XKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, and validated operation up to 175°C junction temperature in 3-level NPC/T-type topologies.

Technical Context

This device integrates an IGBT and a matched rapid diode on a single die substrate within a thermally optimized TO247-3-PLUS housing. The IGBT employs field-stop trench gate architecture with enhanced carrier lifetime control, delivering low conduction loss (1.7 V) and fast switching (td(off) = 541 ns, Eoff = 3.38 mJ at 25°C).

The co-packaged diode features emitter-controlled design with ultra-low Qrr (3.82 µC), soft reverse recovery (Irrm = 53 A), and controlled dirr/dt (−529 A/µs), minimizing voltage overshoot and EMI in high-dV/dt inverter legs.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1200 V - supports DC bus voltages up to 960 V in 2-level inverters with 25% safety margin
IC / IF140 A continuous - rated for full-load operation at Tc = 100°C without derating
VCE(sat)1.7 V @ 25°C - reduces conduction loss by ~15% vs. prior IGBT7 generation at same current
trr / Qrr144 ns / 3.82 µC @ 25°C - enables >20 kHz switching in hard-switched topologies with low diode recovery loss
Rth(j-c) (IGBT)0.12–0.16 K/W - allows 962 W dissipation at Tc = 25°C, supporting compact heatsink designs
Tvj(max)175°C - extends thermal headroom for overload conditions and ambient temperature excursions
QG970 nC - defines gate drive power requirement (≈14.6 mW @ 15 V, 15 kHz) and RG sensitivity

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated mounting hole, enhanced creepage/clearance, NN3.7 variant). Thermal pad optimized for direct heatsink contact; pin 1 = Gate, pin 2 = Collector, pin 3 = Emitter.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalControls IGBT turn-on/off; requires 15 V nominal drive with ≤±20 V absolute max rating
Pin 2 (C)Collector terminalHigh-side switch node; carries full load current and withstands 1200 V blocking
Pin 3 (E)Emitter terminalCommon reference for IGBT and diode; connects to low-side switching node and current sense path

Key Features

FeatureDesign Value
Positive VCE(sat) tempcoEnables stable current sharing across parallel devices without external ballasting resistors
Soft-commutating diodeReduces voltage spikes and EMI during diode reverse recovery in bridge-leg configurations
Low Qrr (3.82 µC)Lowers diode recovery loss by >30% vs. standard FRD, improving system efficiency at 15–25 kHz
175°C max junction ratingSupports operation in sealed enclosures or high-ambient environments without forced air cooling
Pb-free RoHS-compliant platingMeets industrial and automotive environmental compliance requirements without solderability compromise

Applications

Industrial UPSEV Charging

Use Scenario: Online double-conversion UPS delivering clean 3-phase output under grid disturbance or outage.

IC Role / Device Role / Timing Role: IGBT serves as inverter leg switch; diode handles freewheeling current during PWM dead-time.

Use Value: Low VCE(sat) and soft diode recovery minimize conduction + switching losses, extending battery runtime by 4–6% at 20 kHz switching.

Use Scenario: 22 kW AC-to-DC OBC in Level 2 EV chargers with active PFC and LLC resonant DC/DC stages.

IC Role / Device Role / Timing Role: IGBT used in PFC boost stage; diode provides bidirectional energy transfer during zero-voltage switching transitions.

Use Value: 144 ns trr and controlled dirr/dt reduce voltage overshoot across boost inductor, eliminating snubber components.

String InverterWelding Equipment

Use Scenario: 10–15 kW photovoltaic string inverter operating in 3-level NPC topology with transformerless design.

IC Role / Device Role / Timing Role: IGBT switches DC link voltage; diode conducts reverse current during phase-leg commutation.

Use Value: 175°C rating enables derating-free operation at 65°C ambient, reducing thermal management cost by 22% vs. 150°C-rated alternatives.

Use Scenario: IGBT-based inverter welder with 300 A output, requiring high peak current capability and fast response.

IC Role / Device Role / Timing Role: IGBT acts as main power switch in inverter stage; diode handles high di/dt freewheeling during arc ignition.

Use Value: 560 A pulsed current rating and 101 A Irrm support 300 A welding duty cycles without thermal runaway or diode failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT+diode module applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW120N120CS7Same 1200 V/120 A rating but lower current; Rth(j-c) = 0.14 K/W; VCE(sat) = 1.75 V @ 25°CTargeted at 10–12 kW systems; reduced thermal margin at 100°C case tempSelect when 120 A suffices and board space constraints favor smaller footprint
IKQ150N120CH7150 A version; identical VCE(sat), QG, and diode specs; Rth(j-c) = 0.11 K/WDesigned for 15–18 kW systems requiring higher overload headroomChoose for future-proofing or applications needing >10% current margin without layout change

Compared with IKW120N120CS7, IKQ140N120CH7XKSA1 offers 16.7% higher continuous current and 12% lower thermal resistance, while IKQ150N120CH7 trades minimal size increase for 7% higher current and improved thermal headroom-both retain identical diode softness and gate drive compatibility.

Availability

IKQ140N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV charging, and string inverter designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IKQ140N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching in industrial motor drives, renewable energy converters, and EV infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) ≥ 2.9 Ω for safe SOA operation. For optimal Eoff control and voltage overshoot suppression, use 4.8 Ω (as tested in characterization). Values above 10 Ω increase td(off) beyond 700 ns and risk cross-conduction in bridge legs; values below 2.9 Ω exceed safe SOA limits at 175°C.

Does this device require negative gate voltage for robust turn-off?

No. The device is fully characterized and qualified for 0 V/15 V gate drive. Negative bias is not required for reliable operation, though −5 V may be applied to improve noise immunity in high-dV/dt environments. The gate oxide is rated for ±20 V, and no negative voltage is specified in JEDEC-qualified test conditions.

How does the diode's softness affect EMI in inverter applications?

The emitter-controlled diode exhibits soft recovery with <10% overshoot and controlled dirr/dt (−529 A/µs at 25°C), reducing high-frequency spectral content in switching node waveforms. This lowers common-mode EMI by 8–12 dB compared to standard FRDs, easing compliance with CISPR 11 Class A limits without added filtering.

Can IKQ140N120CH7XKSA1 be paralleled without current-sharing resistors?

Yes-its positive VCE(sat) temperature coefficient ensures inherent current balancing. Testing shows <10% current imbalance across three paralleled units at 140 A total load and 100°C case temperature. However, matched gate drive layout (equal trace inductance/resistance) remains essential to avoid dynamic imbalance during switching transients.

IKQ140N120CH7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
175 A
Current - Collector Pulsed (Icm):
560 A
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 140A
Power - Max:
962 W
Switching Energy:
8.84mJ (on), 3.38mJ (off)
Input Type:
Standard
Gate Charge:
970 nC
Td (on/off) @ 25°C:
68ns/541ns
Test Condition:
-
Reverse Recovery Time (trr):
144 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-U01

IKQ140N120CH7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKQ140N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKQ140N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ140N120CH7XKSA1 is usually 5 days.

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IKQ140N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKQ140N120CH7XKSA1?

For technical support, including IKQ140N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ140N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKQ140N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ140N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ140N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ140N120CH7XKSA1?

All IKQ140N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ140N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ140N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ140N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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