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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ150N65EH7XKSA1

Name: IKQ150N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKQ150N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ150N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ150N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 160A TO247-3

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Product details

Overview

IKQ150N65EH7XKSA1 from Infineon is a 650 V, 150 A TRENCHSTOP™ IGBT7 co-packed with an Emitter Controlled 7 diode in PG-TO247-3-PLUS-NN3.7 package. It delivers low V_CEsat (1.4–1.65 V), fast switching (t_d(off) = 341 ns @ 25 °C), and soft reverse recovery (t_rr = 84 ns) for high-efficiency hard-switching inverters and industrial UPS systems.

For engineers reviewing the IKQ150N65EH7XKSA1 datasheet, IKQ150N65EH7XKSA1 pinout, IKQ150N65EH7XKSA1 application, or IKQ150N65EH7XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.19 K/W), gate charge (301 nC), diode Q_rr (2.4 µC), and humidity robustness qualification per JEDEC22-A110.

Technical Context

This IGBT7 device uses field-stop trench gate technology optimized for two- and three-level topologies, enabling reduced conduction and switching losses simultaneously. Its integrated EC7 diode features controlled reverse recovery with low peak I_rrm (45 A) and minimal E_rec (0.46 mJ) at 25 °C.

The device operates across –40 to +175 °C junction temperature, with gate threshold voltage (V_GEth) tightly distributed (2.9–4.8 V) and stable over temperature. Internal emitter inductance is minimized to 13 nH (measured 5 mm from case), supporting clean turn-off waveforms in high-di/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports DC bus voltages up to 600 V in industrial UPS and EV charging systems
I_C	150 A continuous - rated for 100 °C case temperature with 160 A pulsed capability
V_CEsat	1.4–1.65 V @ 150 A/15 V - reduces conduction loss by ~20% vs. IGBT4 generation
t_d(off)/t_f	341 ns / 120 ns @ 25 °C - enables >20 kHz switching in string inverters without excessive loss
Q_G	301 nC - determines gate driver power requirement and influences switching speed control
t_rr/Q_rr	84 ns / 2.4 µC @ 25 °C - minimizes diode-induced voltage overshoot and EMI in bidirectional converters
R_th(j-c)	0.19 K/W (IGBT) - enables compact heatsink design for 307 W dissipation at T_c = 100 °C

Pinout & Package

Package: PG-TO247-3-PLUS-NN3.7 - enhanced thermal and electrical performance over standard TO-247, with optimized leadframe geometry and creepage/clearance for 650 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus positive; carries full load current and withstands 650 V blocking
Emitter (E)	Power return and reference node	Serves as common source for IGBT and diode; low-inductance path critical for switching stability
Gate (G)	Control input	Receives ±20 V logic-level signal; 301 nC total charge requires robust gate driver with <10 Ω turn-on resistance

Key Features

Feature	Design Value
Low V_CEsat with high-speed switching	Enables >98% efficiency in 15–20 kHz industrial UPS inverters without forced air cooling
Soft, fast-recovery EC7 diode	Reduces voltage spikes and snubber losses in regenerative braking circuits of EV chargers
Humidity robustness (JEDEC22-A110 qualified)	Ensures long-term reliability in unsealed outdoor string inverter enclosures with 95% RH cycling
Optimized for hard-switching topologies	Supports direct replacement of IGBT4 in existing two-level PFC and inverter stages without layout change

Applications

Industrial UPS

EV-Charging

Use Scenario: Online double-conversion UPS delivering clean 3-phase AC during grid failure.

IC Role / Device Role / Timing Role: Main inverter switch in 3-level NPC topology operating at 16 kHz.

Use Value: Low V_CEsat and soft diode reduce system conduction loss by 1.2 W per device vs. IKP150N65ES5, extending battery runtime.

Use Scenario: 22 kW AC fast charger with active front-end and isolated DC/DC stage.

IC Role / Device Role / Timing Role: Output stage switch in phase-shifted full-bridge DC/DC converter.

Use Value: 84 ns t_rr and low Q_rr suppress diode reverse recovery oscillation, eliminating need for external RC snubbers.

String Inverter

Welding Equipment

Use Scenario: 10 kW residential solar inverter with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg switching at 20 kHz.

Use Value: 13 nH internal emitter inductance ensures clean turn-off waveform, reducing EMI filter size by 30%.

Use Scenario: IGBT-based inverter welder with 200 A output and arc stabilization feedback.

IC Role / Device Role / Timing Role: Primary power switch in resonant inverter stage operating at 18 kHz.

Use Value: 175 °C max junction rating allows sustained 100% duty cycle operation under ambient 60 °C without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW150N65ES7	Same 650 V/150 A rating but in TO-247-4L package with Kelvin emitter; lower V_CEsat (1.35 V typ) and Q_G (270 nC)	Requires 4-pin gate driver layout; better suited for SiC-compatible gate drive designs	Select when ultra-low switching loss and precise gate control outweigh layout redesign cost
IKQ120N65EH7	Lower current rating (120 A), identical V_CEsat, t_d(off), and package; 10% lower Q_G (271 nC)	Valid drop-in for thermally constrained 12 kW designs where peak current stays below 135 A	Select when thermal margin is sufficient and BOM simplification across 120/150 A SKUs is prioritized

Compared with IKW150N65ES7, IKQ150N65EH7XKSA1 offers simpler 3-pin layout and higher ruggedness in hard-switching surge conditions; versus IKQ120N65EH7, it provides 25% higher current headroom for transient overload tolerance in welding and UPS hold-up modes.

Availability

IKQ150N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and solar string inverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQ150N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-power-density hard-switching applications including solar inverters, UPS systems, and industrial motor drives.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) = 10 Ω for characterization, and simulation shows that increasing to 22 Ω extends t_d(off) by 18% without exceeding safe SOA limits. However, values above 15 Ω risk incomplete turn-off under high dv/dt noise; Infineon recommends 10–12 Ω for 150 A operation with standard gate drivers.

Does this part include an integrated NTC thermistor?

No, IKQ150N65EH7XKSA1 does not integrate an NTC thermistor. Temperature monitoring must be implemented externally using a discrete NTC placed on the heatsink near the mounting screw, as specified in Infineon's AN2019-04 for thermal protection of IGBT modules.

Can the antiparallel diode handle reverse recovery in synchronous rectification mode?

Yes-the EC7 diode is characterized for bidirectional conduction and reverse recovery at IF = 150 A and VR = 400 V. Its 84 ns t_rr and controlled dirr/dt (–2240 A/µs) make it suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies up to 100 kHz.

Is the PG-TO247-3-PLUS-NN3.7 package RoHS and REACH compliant?

Yes-Infineon confirms full RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 compliance for IKQ150N65EH7XKSA1, including exemption 7a for lead in high-melting-temperature solder alloys used in die attach. Full material declarations are available via Infineon's EcoReport tool.

IKQ150N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 160 A

Current - Collector Pulsed (Icm):: 600 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 150A

Power - Max:: 621 W

Switching Energy:: 5.8mJ (on), 5.4mJ (off)

Input Type:: Standard

Gate Charge:: 301 nC

Td (on/off) @ 25°C:: 45ns/341ns

Test Condition:: 400V, 150A, 10Ohm, 15V

Reverse Recovery Time (trr):: 84 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ150N65EH7XKSA1 FAQ

1.How can I place an order for IKQ150N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ150N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ150N65EH7XKSA1 reliable?

The price and inventory of IKQ150N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ150N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ150N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ150N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ150N65EH7XKSA1?

IKQ150N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ150N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ150N65EH7XKSA1?

For technical support, including IKQ150N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ150N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKQ150N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ150N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ150N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ150N65EH7XKSA1?

All IKQ150N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ150N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ150N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ150N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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