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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ40N120CT2XKSA1

Name: IKQ40N120CT2XKSA1
Brand: Infineon Technologies
SKU: IKQ40N120CT2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ40N120CT2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ40N120CT2XKSA1.pdf

Description:: IGBT TRENCH/FS 1200V 80A TO247-3

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Product details

Overview

IKQ40N120CT2XKSA1 from Infineon is a 1200 V, 40 A TRENCHSTOP™ 2 IGBT with integrated emitter-controlled diode in PG-TO247-3-46 package, featuring 1.75 V V_CE(sat) at 25°C, 10 µs short-circuit withstand time at 175°C junction temperature, and soft fast-recovery anti-parallel diode - deployed in three-level solar string inverters and servo drives.

For engineers reviewing the IKQ40N120CT2XKSA1 datasheet, IKQ40N120CT2XKSA1 pinout, IKQ40N120CT2XKSA1 application, or IKQ40N120CT2XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode Q_rr and trr performance at 175°C, gate charge (190 nC), and thermal resistance (R_th(j-c) = 0.30 K/W for IGBT, 0.50 K/W for diode).

Technical Context

This IGBT uses TRENCHSTOP™ 2 trench-gate field-stop structure to achieve low conduction loss while maintaining robust short-circuit ruggedness. Its positive V_CE(sat) temperature coefficient enables stable parallel operation without current-sharing resistors.

The co-packed emitter-controlled diode delivers full-rated 40 A forward current with 298 ns trr and 3.10 µC Q_rr at 25°C, rising to 488 ns and 7.40 µC at 175°C - critical for minimizing switching losses and voltage overshoot in hard-switched inverter legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 1000 V in three-level topologies with margin.
I_C (continuous)	40 A at T_c = 135°C - defines maximum steady-state output current under industrial thermal constraints.
V_CE(sat)	1.75 V at 40 A, 25°C - sets conduction loss baseline; rises to 2.30 V at 175°C, enabling predictable thermal design.
t_SC	10 µs at V_GE = 15 V, T_vj = 175°C - determines minimum fault-clearing time required in protection circuitry.
Q_G	190 nC - directly impacts gate driver power requirement and switching speed control via R_G.
R_th(j-c) (IGBT)	0.30 K/W - enables calculation of junction temperature rise above case for thermal management.
trr / Q_rr	298 ns / 3.10 µC at 25°C - defines diode reverse recovery stress on complementary switch and snubber sizing.

Pinout & Package

PG-TO247-3-46 package: isolated mounting base, 3-pin through-hole outline with 4.6 mm creepage/clearance, optimized for high-voltage isolation and thermal transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ rail in inverter half-bridge; carries full load current and fault current during short-circuit events.
Gate (G)	Control input for IGBT channel	Requires ±20 V transient rating; 190 nC total gate charge dictates driver strength and layout inductance limits.
Emiter (E)	Common emitter node for IGBT and diode	Reference point for gate drive; carries both IGBT emitter current and diode forward current - critical for Kelvin sensing and noise immunity.

Key Features

Feature	Design Value
Low V_CE(sat) with positive tempco	1.75 V @ 25°C, increasing to 2.30 V @ 175°C - ensures inherent current balancing in paralleled configurations without external ballasting.
Soft, fast-recovery anti-parallel diode	trr = 298 ns, Q_rr = 3.10 µC @ 25°C - reduces voltage spikes and EMI during commutation, easing snubber design.
10 µs short-circuit withstand capability	Validated at V_GE = 15 V, T_vj = 175°C - allows use with standard microsecond-scale protection logic in motor drives and inverters.
High junction temperature rating	T_vj(max) = 175°C - extends usable operating range in compact, convection-cooled industrial enclosures.
Pb-free, RoHS-compliant plating	Meets JEDEC J-STD-020 reflow profile - supports lead-free assembly without compromising wirebond reliability or thermal cycling endurance.

Applications

Three-Level Solar String Inverter

Servo Drive Output Stage

Use Scenario: High-efficiency DC–AC conversion in distributed PV systems using NPC or T-type topologies.

IC Role / Device Role / Timing Role: Upper/lower switch in active NPC leg, handling 600–1000 V DC link with bidirectional current flow during modulation.

Use Value: Low V_CE(sat) and soft diode reduce conduction + commutation losses, improving system efficiency >98.5% at partial load.

Use Scenario: Precision torque and speed control in industrial robotics and CNC axes.

IC Role / Device Role / Timing Role: Half-bridge switch in PWM-driven motor phase leg, operating at 8–20 kHz with tight dead-time control.

Use Value: Stable 10 µs short-circuit rating enables deterministic fault response; low Q_rr minimizes shoot-through risk during high-di/dt transitions.

Commercial Vehicle Traction Inverter

Agricultural Vehicle Power Converter

Use Scenario: Onboard traction in electric buses and delivery vans with 400–800 V battery packs.

IC Role / Device Role / Timing Role: Main inverter switch in dual-motor or multi-phase drive systems, exposed to wide ambient (−40°C to +85°C) and vibration.

Use Value: 175°C T_vj(max) and qualified industrial reliability per JEDEC47/20/22 ensure long-term operation under cyclic thermal stress and mechanical shock.

Use Scenario: Hydraulic pump and PTO control in tractors and harvesters operating in dusty, humid environments.

IC Role / Device Role / Timing Role: High-side switch in DC–AC or DC–DC converters powering auxiliary actuators and sensors.

Use Value: PG-TO247-3-46 package provides 4.6 mm creepage for enhanced pollution degree III insulation; RoHS compliance supports global equipment certification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N120H3	Higher V_CE(sat) (1.95 V), lower Q_G (140 nC), same 1200 V/40 A rating, TRENCHSTOP™ 3 generation	Better switching loss trade-off but higher conduction loss; optimized for 16–30 kHz switching in UPS and welders	Select when prioritizing E_off reduction over V_CE(sat) in medium-frequency, air-cooled designs.
FF400R12KE4	1200 V/400 A dual-pack module with NTC sensor; V_CE(sat) = 1.7 V, Q_G = 1250 nC, R_th(j-c) = 0.12 K/W	Integrated dual-switch topology with thermal monitoring - targets high-power (>10 kW) industrial drives	Choose only when system requires matched dual-switch pairing, thermal feedback, and scalable power beyond discrete implementation.

Compared with IKW40N120H3 and FF400R12KE4, IKQ40N120CT2XKSA1 offers the best balance of low conduction loss, proven short-circuit ruggedness, and discrete flexibility for 5–15 kW inverter stages where thermal and layout constraints favor single-device optimization.

Availability

IKQ40N120CT2XKSA1 is available at Aetrix Electronics and suitable for three-level solar string inverters, servo drive output stages, and commercial vehicle traction converters requiring stable component supply across extended production lifecycles.

Supply support for IKQ40N120CT2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in industrial, automotive, and renewable energy markets.

IKQ40N120CT2XKSA1 belongs to Infineon's TRENCHSTOP™ 2 IGBT product line, engineered for high-efficiency, high-reliability switching in industrial motor drives and solar inverters operating up to 175°C junction temperature.

FAQ

What is the maximum gate-emitter voltage rating for IKQ40N120CT2XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating is ±30 V for pulses ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation. Gate drive circuits must limit V_GE to 15 V for reliable switching and avoid negative bias below −10 V to prevent unintended turn-on from Miller coupling.

Does IKQ40N120CT2XKSA1 include an integrated diode, and what are its key ratings?

Yes - it integrates a full-current-rated emitter-controlled diode rated for 40 A continuous forward current at T_c = 100°C. Key diode specs include V_F = 1.90 V at 40 A/25°C, trr = 298 ns, Q_rr = 3.10 µC, and Irrm = 18.0 A, all validated per JEDEC test conditions in the official Infineon datasheet Rev. 2.3.

How does the short-circuit withstand time change with junction temperature?

The 10 µs short-circuit rating is specified at T_vj = 175°C and V_GE = 15 V. At lower junction temperatures (e.g., 125°C), the device can sustain short-circuit current longer - though no extended duration is guaranteed or characterized in the datasheet. Designers must implement protection within 10 µs regardless of operating temperature.

Is IKQ40N120CT2XKSA1 suitable for paralleling, and what design considerations apply?

Yes - its positive V_CE(sat) temperature coefficient ensures natural current sharing. Successful paralleling requires matched gate drive loop inductance (<5 nH), identical PCB trace lengths, symmetrical thermal mounting, and individual gate resistors (12 Ω typical). Layout asymmetry remains the dominant cause of imbalance, not parameter spread.

IKQ40N120CT2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 40A

Power - Max:: 500 W

Switching Energy:: 3.1mJ (on), 2.9mJ (off)

Input Type:: Standard

Gate Charge:: 190 nC

Td (on/off) @ 25°C:: 32ns/328ns

Test Condition:: 600V, 40A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ40N120CT2XKSA1 FAQ

1.How can I place an order for IKQ40N120CT2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ40N120CT2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ40N120CT2XKSA1 reliable?

The price and inventory of IKQ40N120CT2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ40N120CT2XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ40N120CT2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ40N120CT2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ40N120CT2XKSA1?

IKQ40N120CT2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ40N120CT2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ40N120CT2XKSA1?

For technical support, including IKQ40N120CT2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ40N120CT2XKSA1 requirements.

6.How does Aetrix verify that IKQ40N120CT2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ40N120CT2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ40N120CT2XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ40N120CT2XKSA1?

All IKQ40N120CT2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ40N120CT2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ40N120CT2XKSA1 part is unused and in its original packaging.

Return procedure for IKQ40N120CT2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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