Infineon Technologies IKQ50N120CH3XKSA1

Overview

IKQ50N120CH3XKSA1 from Infineon is a 1200 V, 50 A high-speed third-generation IGBT with integrated emitter-controlled diode in PG-TO247-3-46 package. It delivers 2.0 V V_CE(sat) at T_vj = 25°C, 10 µs short-circuit withstand time at 175°C, and low gate charge (235 nC), enabling high-efficiency hard-switching and resonant topologies in industrial UPS and solar string inverters.

For engineers reviewing the IKQ50N120CH3XKSA1 datasheet, IKQ50N120CH3XKSA1 pinout, IKQ50N120CH3XKSA1 application, or IKQ50N120CH3XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, soft fast-recovery anti-parallel diode (trr = 240 ns @ 25°C), and thermal robustness up to 175°C junction operation.

Technical Context

This IGBT employs Infineon's Highspeed3 technology optimized for high-frequency switching in three-level topologies. Its design integrates a full-current-rated emitter-controlled diode with low Q_rr (3.5 µC @ 25°C) and controlled dirr/dt (−403 A/µs), minimizing voltage overshoot and EMI during commutation.

The device features a 0.23 K/W IGBT junction-to-case thermal resistance and operates with ±20 V DC / ±30 V transient gate-emitter voltage rating. Its dynamic performance is characterized by 297 ns typical turn-off delay and 4.9 mJ total switching energy at 25°C under standard test conditions (V_CC = 600 V, I_C = 50 A, R_G = 10 Ω).

Key Specifications

Pinout & Package

IKQ50N120CH3XKSA1 uses the PG-TO247-3-46 package: insulated case, 3-pin through-hole variant with standardized TO-247 mechanical footprint and enhanced creepage/clearance for 1200 V isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN50N120A3 and STGW50H120DF3, IKQ50N120CH3XKSA1 offers superior short-circuit ruggedness and integrated diode softness-critical for unattended industrial UPS and solar inverters-while maintaining competitive conduction and switching loss trade-offs.

Availability

IKQ50N120CH3XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and energy storage system bi-directional converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKQ50N120CH3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

IKQ50N120CH3XKSA1 belongs to Infineon's High Speed Switching Series (H3), engineered specifically for high-frequency, high-efficiency power conversion in industrial motor drives, UPS, and solar inverters demanding low-loss switching and robust fault handling.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175°C junction temperature?

The datasheet specifies 10 Ω as the reference R_G(off) for energy measurements at T_vj = 175°C. Using R_G > 15 Ω increases td(off) to >450 ns and raises E_off beyond 4.5 mJ, risking thermal runaway under repeated switching. For robust operation above 150°C, R_G(off) should remain ≤12 Ω with active gate driving.

Does IKQ50N120CH3XKSA1 support paralleling, and what layout precautions are required?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing. Layout requires symmetrical gate drive paths (≤5 mm length difference), matched emitter inductance (<5 nH per device), and identical thermal mounting pressure across all paralleled units to maintain <5°C junction temperature spread.

Can this IGBT replace older H1 or H2 generation devices without redesign?

No direct drop-in replacement: H3 has higher dV/dt capability but lower V_GE(th) (5.8 V typ vs. 6.2 V in H2), requiring verification of gate driver voltage margins. Also, its lower C_res (199 pF) changes Miller effect behavior-layout parasitics and snubber values must be re-evaluated.

Is the integrated diode rated for full 50 A continuous forward current?

Yes-the "full current rated anti-parallel diode" is specified for I_F = 50 A continuous at T_c = 100°C, matching the IGBT's collector rating. Its V_F is 1.90 V at 50 A/25°C and rises to 2.30 V at 175°C, with thermal resistance R_th(j-c) = 0.42 K/W confirmed in the datasheet.