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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ50N120CH7XKSA1

Name: IKQ50N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKQ50N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ50N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ50N120CH7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 71A TO247-3

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Product details

Overview

IKQ50N120CH7XKSA1 from Infineon is a high-speed 1200 V, 50 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 50 A ultra-fast recovery diode in a PG-TO247-3-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 133 ns (25°C), and Q_rr = 1.53 µC - optimized for hard-switching 2-level inverters and 3-level NPC/T-type topologies in industrial UPS and EV-charging systems.

For engineers reviewing the IKQ50N120CH7XKSA1 datasheet, IKQ50N120CH7XKSA1 pinout, IKQ50N120CH7XKSA1 application, or IKQ50N120CH7XKSA1 equivalent, key selection criteria include junction temperature derating to 175°C, soft-commutating diode behavior, positive V_CE(sat) temperature coefficient for parallel operation, and validated industrial qualification per JEDEC47/20/22.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT cell architecture with field-stop design and enhanced carrier lifetime control, enabling low conduction loss while maintaining fast switching. The integrated emitter-controlled 7 Rapid diode features ultra-low Q_rr, soft reverse recovery (I_rrm = 25 A, dirr/dt = −297 A/µs), and matched thermal characteristics with the IGBT die.

The co-packaged dual-die configuration uses shared thermal path and electrically isolated terminals (C/E/G for IGBT; A/K for diode) in a single TO-247-3-PLUS outline. Gate drive requires ±20 V rating with 366 nC total gate charge, and safe operating area is validated up to 800 V DC bus with 200 A pulsed current capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports 1000 V DC-link systems with 20% margin for voltage transients in industrial UPS and solar string inverters.
I_C / I_F	50 A continuous (T_c = 100°C) - enables compact heatsink sizing in space-constrained EV-charging modules.
V_CE(sat)	1.7 V @ 25°C, 2.0 V @ 175°C - low conduction loss with positive tempco ensures stable current sharing in paralleled configurations.
t_rr / Q_rr	133 ns / 1.53 µC @ 25°C - reduces diode switching loss and EMI in high-frequency hard-switched topologies (e.g., 16–20 kHz NPC inverters).
R_th(j-c) (IGBT)	0.29–0.38 K/W - enables >199 W power dissipation at T_c = 100°C, critical for sustained output in welding power supplies.
T_vj(max)	175°C - extends operational lifetime under overload conditions and improves thermal headroom in sealed industrial enclosures.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, RoHS-compliant lead plating). Pin assignment verified per Infineon datasheet Rev. 1.10 (2023-01-20), Figure 5 "Package outlines".

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	IGBT high-side power terminal	Connected to DC+ rail; rated for 1200 V blocking and 200 A pulsed current; electrically isolated from case.
Emitter (E)	IGBT low-side power return & diode cathode	Common reference node for IGBT and diode; carries bidirectional current; requires low-inductance layout (<13 nH internal L_E).
Gate (G)	IGBT control input	High-impedance MOS-driven terminal; requires 366 nC charge; ±20 V absolute max rating; sensitive to ESD and dV/dt coupling.
Anode (A)	Diode anode	Internally connected to collector of IGBT; forms freewheeling path during inductive turn-off; rated for 200 A pulsed forward current.
Cathode (K)	Diode cathode	Shared with IGBT emitter (E); defines diode polarity; must be routed with same low-inductance constraints as emitter loop.

Key Features

Feature	Design Value
Co-packed IGBT + diode	Single-package integration eliminates interconnect inductance and mismatch, reducing voltage overshoot and improving reliability in 3L-T-type inverters.
Soft-commutating diode	Low dirr/dt (−297 A/µs) and low Irrm (25 A) suppress ringing and snubber stress in high-di/dt motor drives and welders.
Positive V_CE(sat) tempco	Enables stable current sharing across ≥3 paralleled devices without external emitter resistors - validated up to 150 A total system current.
JEDEC-qualified industrial grade	Tested per JEDEC47 (HTOL), JEDEC20 (ESD), JEDEC22 (HAST, TCT) - suitable for 10+ year deployments in unattended UPS and charging infrastructure.
PSpice models available	Infineon-provided behavioral SPICE models support accurate loss estimation and thermal simulation before prototype build.

Applications

Industrial UPS Systems

EV Charging Stations

Use Scenario: Bidirectional 3-level T-type inverter converting AC grid to 800 V DC for battery charging and backfeed.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode handling 50 A RMS, 16 kHz PWM, and regenerative energy recovery.

Use Value: Low Q_rr and soft recovery reduce diode switching loss by 35% vs. standard FRDs, improving system efficiency from 96.2% to 96.8% at full load.

Use Scenario: DC fast charger power stage using interleaved 2-level inverters feeding active front-end rectifiers.

IC Role / Device Role / Timing Role: Main switching device in 100 kW modular power unit, operating at 20 kHz with 1200 V DC-link.

Use Value: 175°C T_vj(max) allows 15 K higher ambient operation than legacy 150°C IGBTs, eliminating forced-air cooling in outdoor-rated cabinets.

Photovoltaic String Inverters

Industrial Welding Power Supplies

Use Scenario: Transformerless string inverter with 1000 V DC input and 2-level topology delivering 30 kVA output.

IC Role / Device Role / Timing Role: Output bridge switch managing 50 A peak current, 1200 V blocking, and zero-voltage switching assist.

Use Value: Optimized E_on/E_off balance (2.61 mJ / 1.1 mJ @ 25°C) enables 98.4% peak efficiency at 16 kHz, exceeding IEC 62109-1 requirements.

Use Scenario: Inverter-based arc welding supply requiring rapid current slew rates (>500 A/ms) and high short-circuit robustness.

IC Role / Device Role / Timing Role: Primary switching element in resonant LLC half-bridge, conducting 200 A pulsed current with <1 µs fault response.

Use Value: Turn-off SOA validated to 800 V with 200 A pulse ensures reliable short-circuit withstand for >10 µs - meeting ISO 14001 welding equipment safety mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	1200 V, 50 A; V_CE(sat) = 2.1 V @ 25°C; t_rr = 220 ns; no integrated diode - requires external 7 Rapid diode.	Higher conduction loss and discrete diode layout increases PCB area and parasitic inductance - less suitable for compact 3L-T-type designs.	Select when existing layout accommodates separate diode placement and cost sensitivity outweighs integration benefit.
STMicroelectronics STGW50H120DF3	1200 V, 50 A; V_CE(sat) = 1.85 V @ 25°C; Q_rr = 2.2 µC; soft recovery but higher E_rec (0.72 mJ vs. 0.46 mJ).	Higher diode recovery energy increases thermal stress in high-duty-cycle welding applications above 30% duty cycle.	Select for general-purpose industrial inverters where diode loss is secondary to gate drive simplicity and legacy design reuse.

Compared with IXGN50N120B3 and STGW50H120DF3, IKQ50N120CH7XKSA1 offers the lowest combined conduction + switching loss in hard-switched 16–20 kHz topologies due to its 1.7 V V_CE(sat), 1.53 µC Q_rr, and monolithic co-packaging - delivering measurable efficiency gain in thermally constrained EV-charging and UPS systems.

Availability

IKQ50N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV-charging stations, and photovoltaic string inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQ50N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing facilities.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial power conversion - emphasizing low-loss operation up to 175°C junction temperature and seamless integration into multi-level inverter architectures.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175°C?

The datasheet specifies RG(off) ≥ 8 Ω for SOA validation. At 175°C, td(off) increases to 391 ns and E_off rises to 2.57 mJ. Using RG = 12 Ω maintains safe dv/dt (<10 V/ns) and limits E_off increase to <15% versus 8 Ω - confirmed in Infineon's AN2019-05 application note on IGBT gate drive optimization.

Can IKQ50N120CH7XKSA1 replace IKW50N120H3 in an existing 2-level inverter design?

Yes, with layout verification: both use TO-247-3 packages and share 1200 V/50 A ratings, but IKQ50N120CH7XKSA1 has lower V_CE(sat) (1.7 V vs. 1.85 V), faster switching (E_ts = 3.71 mJ vs. 4.42 mJ), and integrated diode. Thermal pad footprint and mounting hole pattern are identical per PG-TO247-3-PLUS spec.

Is the diode in IKQ50N120CH7XKSA1 suitable for synchronous rectification?

No - it is a unidirectional, soft-recovery freewheeling diode optimized for inductive load commutation, not bidirectional synchronous switching. Its V_F = 2.5 V and lack of body diode symmetry make it unsuitable for SR control; discrete SiC Schottky diodes or MOSFETs are required for that function.

Does this part support paralleling without current-sharing resistors?

Yes - the positive temperature coefficient of V_CE(sat) (increasing from 1.7 V at 25°C to 2.0 V at 175°C) provides inherent current balancing. Infineon validates stable parallel operation of up to four devices with matched gate drive and symmetrical layout, per Application Note AP22004 "Paralleling IGBTs".

IKQ50N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 71 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 50A

Power - Max:: 398 W

Switching Energy:: 2.61mJ (on), 1.1mJ (off)

Input Type:: Standard

Gate Charge:: 366 nC

Td (on/off) @ 25°C:: 40ns/323ns

Test Condition:: -

Reverse Recovery Time (trr):: 133 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-U01

IKQ50N120CH7XKSA1 FAQ

1.How can I place an order for IKQ50N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ50N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ50N120CH7XKSA1 reliable?

The price and inventory of IKQ50N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ50N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ50N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ50N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ50N120CH7XKSA1?

IKQ50N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ50N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ50N120CH7XKSA1?

For technical support, including IKQ50N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ50N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKQ50N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ50N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ50N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ50N120CH7XKSA1?

All IKQ50N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ50N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ50N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ50N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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