Infineon Technologies IKQ50N120CT2XKSA1

Overview

IKQ50N120CT2XKSA1 from Infineon is a 1200 V, 50 A TRENCHSTOP™ 2 IGBT with integrated emitter-controlled diode in PG-TO247-3-46 package, designed for high-efficiency switching in industrial motor drives and solar inverters. It delivers 1.75 V V_CE(sat) at 25°C, 10 µs short-circuit withstand time at 175°C junction temperature, and features a positive temperature coefficient for stable paralleling.

For engineers reviewing the IKQ50N120CT2XKSA1 datasheet, IKQ50N120CT2XKSA1 pinout, IKQ50N120CT2XKSA1 application, or IKQ50N120CT2XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode softness (trr = 410 ns @ 25°C), thermal resistance (R_th(j–c) = 0.23 K/W), and gate charge (Q_G = 235 nC) for optimized gate drive design.

Technical Context

This IGBT employs TRENCHSTOP™ 2 trench-gate field-stop structure to achieve low conduction loss while maintaining robust short-circuit ruggedness. Its integrated anti-parallel diode is full-current-rated, soft-recovery (Q_rr = 3.90 µC @ 25°C), and co-optimized for minimal system EMI and tail current interaction.

The device operates up to 175°C junction temperature with defined safe operating area (SOA) under DC and pulsed conditions. Gate threshold voltage (V_GE(th) = 5.1–6.5 V) and transconductance (g_fs = 19.0 S) ensure predictable turn-on behavior across temperature, supporting reliable PWM control in three-level topologies.

Key Specifications

Pinout & Package

Package: PG-TO247-3-46 - Standard 3-pin TO-247 variant with extended creepage distance and optimized thermal path via copper baseplate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW50N120H3 and FGH50T120MD, IKQ50N120CT2XKSA1 offers the lowest conduction loss and built-in diode softness-ideal for medium-frequency industrial drives where thermal management and EMI are primary constraints.

Availability

IKQ50N120CT2XKSA1 is available at Aetrix Electronics and suitable for General Purpose Drives, Solar String Inverters, and Welding Power Supplies requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IKQ50N120CT2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 2 IGBT family, engineered specifically for high-efficiency, high-reliability industrial switching applications demanding low V_CE(sat), rugged short-circuit performance, and integrated diode functionality.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 10 Ω for characterization, and increasing it beyond 22 Ω risks exceeding the 10 µs short-circuit withstand limit due to slower turn-off. For 600 V bus applications, 10–15 Ω provides optimal trade-off between switching loss and SOA margin. Higher values require verification of tail current energy under worst-case thermal conditions.

Can this IGBT be paralleled without active current balancing?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current sharing across devices. Parallel operation is validated per JEDEC JESD47 guidelines, provided layout symmetry, matched gate drive impedance (<±5%), and thermal coupling (ΔT_j < 10°C) are maintained. Derating to 45 A per device is recommended for long-term reliability.

Is the integrated diode rated for full reverse recovery at 175°C?

Yes-the diode is fully rated at 175°C junction temperature: trr = 590 ns, Q_rr = 8.60 µC, and Irrm = 30.0 A. These parameters are measured under standardized conditions (VR = 600 V, IF = 50 A, diF/dt = 800 A/µs) and confirmed across the full temperature range in the official datasheet.

Does the PG-TO247-3-46 package require special mounting torque or thermal interface material?

Mounting torque must be 1.5–2.0 N·m on M3 screws; excessive torque risks baseplate deformation. Infineon recommends thermal interface material with ≤0.1 K/W thermal resistance (e.g., Bergquist Sil-Pad 2000) and minimum 0.1 mm bond line thickness. The package's flat copper baseplate is optimized for direct-screw attachment to aluminum heatsinks.