Infineon Technologies IKQ75N120CH3XKSA1

Overview

IKQ75N120CH3XKSA1 from Infineon is a 1200 V, 75 A third-generation high-speed IGBT in Highspeed3 technology, co-packed with a soft, fast-recovery full-current-rated anti-parallel emitter-controlled diode. It delivers 2.0 V V_CE(sat) at T_vj = 25°C, 10 µs short-circuit withstand time at 175°C, and low gate charge (370 nC), targeting hard-switching and resonant topologies in industrial UPS, solar string inverters, and welding equipment.

For engineers reviewing the IKQ75N120CH3XKSA1 datasheet, IKQ75N120CH3XKSA1 pinout, IKQ75N120CH3XKSA1 application, or IKQ75N120CH3XKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, diode Q_rr and trr performance at 175°C, short-circuit ruggedness, thermal resistance (R_th(j-c) = 0.16 K/W for IGBT), and PG-TO247-3-46 mechanical compatibility.

Technical Context

This IGBT employs Infineon's Highspeed3 silicon process to achieve low conduction and switching losses simultaneously. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the integrated emitter-controlled diode provides soft reverse recovery (trr = 370 ns typ. at 25°C, 640 ns at 175°C) and low Q_rr (5.10 µC typ. at 25°C).

The device is rated for 1200 V blocking, 75 A DC collector current at T_c = 134°C, and operates up to T_vj = 175°C. Switching energy is optimized via low C_ies (4856 pF), C_res (290 pF), and controlled tail current-E_on = 6.4 mJ and E_off = 2.8 mJ at 25°C under standard test conditions.

Key Specifications

Pinout & Package

IKQ75N120CH3XKSA1 is housed in the PG-TO247-3-46 package-a 3-pin, through-hole, isolated-mount variant of TO-247 with 4.6 mm creepage/clearance and standardized footprint for industrial thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-speed IGBT applications.

Compared with IXGN75N120B3 and STGW75H120DF3, IKQ75N120CH3XKSA1 offers the best balance of low V_CE(sat), low Q_G, and industry-leading 10 µs short-circuit rating-making it optimal for high-reliability, high-frequency industrial inverters where thermal and fault robustness are co-prioritized.

Availability

IKQ75N120CH3XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, three-level solar string inverters, and IGBT-based welding power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production line.

Supply support for IKQ75N120CH3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKQ75N120CH3XKSA1 belongs to Infineon's High Speed Switching Series-designed specifically for high-efficiency, high-frequency power conversion in solar inverters, UPS, and industrial motor drives where low switching loss and thermal robustness are critical.

FAQ

What is the maximum gate-emitter voltage rating for IKQ75N120CH3XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating is ±30 V for pulses ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation. Recommended gate drive is +15 V / –8 V to ensure reliable turn-on and fast, low-loss turn-off while maintaining noise immunity.

Does IKQ75N120CH3XKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery, full-current-rated emitter-controlled diode co-packaged in the same PG-TO247-3-46 housing. This diode supports 75 A DC forward current at T_c = 100°C and exhibits trr = 370 ns (typ.) at 25°C, eliminating the need for discrete antiparallel diodes in most inverter leg designs.

How does junction temperature affect V_CE(sat) in IKQ75N120CH3XKSA1?

V_CE(sat) increases predictably with junction temperature: from 2.00 V at 25°C to 2.35 V at 175°C (typ.). This positive temperature coefficient ensures inherent current-sharing stability in paralleled configurations and simplifies thermal runaway protection design compared to devices with negative coefficients.

What is the recommended gate resistor value for standard switching operation?

Infineon specifies R_G(on) = R_G(off) = 6.0 Ω for characterization (V_CC = 600 V, I_C = 75 A). For practical designs, R_G between 4.7 Ω and 10 Ω balances switching speed, E_on/E_off, and gate driver loss. Lower values increase dv/dt and EMI risk; higher values raise switching losses and reduce short-circuit response margin.