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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ75N120CH7XKSA1

Name: IKQ75N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKQ75N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ75N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ75N120CH7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 82A TO247-3

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Product details

Overview

IKQ75N120CH7XKSA1 from Infineon is a high-speed 1200 V TRENCHSTOP™ IGBT 7 co-packed with a full-rated 75 A ultra-fast recovery diode, featuring V_CE(sat) = 1.7 V at 25°C, Q_rr = 2.35 µC, and t_rr = 149 ns - optimized for hard-switching 2-level inverters and 3-level NPC/T-type topologies in industrial UPS and EV-charging systems.

For engineers reviewing the IKQ75N120CH7XKSA1 datasheet, IKQ75N120CH7XKSA1 pinout, IKQ75N120CH7XKSA1 application, or IKQ75N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient enabling stable paralleling, soft-commutating diode behavior, and validated industrial qualification per JEDEC47/20/22.

Technical Context

This device integrates a 1200 V, 75 A IGBT and a matched 75 A emitter-controlled 7 Rapid diode in a single PG-TO247-3-PLUS package. Its TRENCHSTOP™ IGBT 7 architecture delivers low conduction loss (V_CE(sat) = 1.7–2.15 V) and fast switching (t_d(off) = 470 ns, t_f = 32 ns at 25°C), while the diode exhibits ultra-low Q_rr (2.35–6.54 µC) and soft reverse recovery (I_rrm = 28–50 A).

The co-packaged design ensures matched thermal and dynamic characteristics between IGBT and diode, critical for minimizing voltage overshoot and oscillation in high dv/dt applications like string inverters and welding power supplies. Thermal resistance R_th(j-c) is 0.21–0.27 K/W (IGBT) and 0.37–0.48 K/W (diode), supporting operation up to T_vj = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 960 V in 2L inverters and 600 V in 3L NPC/T-type topologies with margin.
I_C / I_F	75 A continuous - rated for both IGBT collector and diode forward current at T_c = 100°C, enabling symmetrical power handling.
V_CE(sat)	1.7 V @ 25°C - reduces conduction loss by ~15% vs. prior-generation IGBT7 devices, improving system efficiency at partial load.
Q_rr	2.35 µC @ 25°C - lowers diode turn-off loss and EMI generation during commutation, critical for >20 kHz switching.
t_rr	149 ns @ 25°C - enables clean zero-current switching transitions and minimizes tail current overlap loss.
T_vj(max)	175°C - extends usable thermal headroom for compact heatsink designs and high ambient temperature environments.
E_off	1.76 mJ @ 25°C - combined with low C_res (54 pF), enables efficient high-frequency hard switching with minimal gate drive loss.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, NN3.7 variant). The package features an electrically isolated collector tab for simplified mounting and improved thermal performance over standard TO-247.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	IGBT emitter terminal	Common reference node for IGBT and diode; connects to low-side DC link or phase leg output.
Pin 2 (Collector)	IGBT collector terminal	High-voltage power input node; electrically connected to the isolated metal tab for direct heatsink mounting.
Pin 3 (Gate)	IGBT gate control terminal	High-impedance MOS-controlled input requiring 15 V drive; referenced to emitter, not collector or tab.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing across parallel devices without external current-balancing resistors.
Soft-commutating diode	Low I_rrm/Q_rr ratio and controlled dirr/dt (-271 A/µs) suppress voltage spikes and reduce snubber requirements.
Ultra-low gate charge	Q_G = 518 nC - allows use of lower-power gate drivers and reduces switching energy loss at high frequencies.
JEDEC-qualified industrial reliability	Validated per JEDEC47/20/22 standards - ensures long-term robustness in mission-critical UPS and EV-charging applications.
Pb-free & RoHS compliant	Meets global environmental compliance requirements without sacrificing thermal or electrical performance.

Applications

Industrial UPS

EV-Charging

Use Scenario: Three-phase IGBT-based inverter stage converting DC battery or rectified AC to regulated 50/60 Hz sine-wave output under dynamic load changes.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in the inverter bridge leg, operating at 8–16 kHz with precise dead-time control.

Use Value: Low V_CE(sat) and soft diode recovery minimize conduction + switching losses, extending runtime and reducing cooling requirements.

Use Scenario: Onboard or offboard DC fast charger using active front-end (AFE) and DC-DC isolation stages with bidirectional power flow.

IC Role / Device Role / Timing Role: Primary switching device in the DC-DC LLC or phase-shifted full-bridge converter, handling 750–1000 V DC input.

Use Value: 175°C junction rating and low Q_rr enable reliable operation at high power density and elevated ambient temperatures near batteries.

String Inverter

Welding Power Supply

Use Scenario: Central or string-level photovoltaic inverter converting 600–1000 V DC input to grid-synchronized AC output with MPPT and reactive power support.

IC Role / Device Role / Timing Role: Main switch in the DC-AC H-bridge or NPC topology, switching at 16–32 kHz with sinusoidal PWM modulation.

Use Value: Matched IGBT/diode dynamics and low E_ts (7.04 mJ) reduce THD and improve inverter efficiency across partial-load conditions.

Use Scenario: Inverter-based arc welding equipment delivering tightly regulated constant-current or constant-voltage output with rapid load transients.

IC Role / Device Role / Timing Role: Output stage switch in resonant or hard-switched inverter, operating at 20–50 kHz with high peak current demands.

Use Value: High I_Cpulse (300 A) and robust SOA allow sustained short-circuit capability during arc ignition and stick-out events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT+diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N120H3	Legacy TRENCHSTOP™ 3 IGBT; higher V_CE(sat) (2.1 V), slower t_f (100 ns), no soft diode - Q_rr = 4.2 µC.	Limited to ≤10 kHz switching; requires larger snubbers and heatsinks in same topologies.	Select only if legacy design reuse or cost sensitivity outweighs efficiency gains.
FF75R12ME4	1200 V, 75 A half-bridge module with separate IGBT/diode dies; higher integration but fixed layout - no discrete pinout flexibility.	Requires PCB redesign; better for space-constrained designs where footprint and thermal coupling are prioritized over layout freedom.	Choose when board area is constrained and standardized half-bridge layout is acceptable.

Compared with IKW75N120H3, IKQ75N120CH7XKSA1 delivers 18% lower conduction loss and 55% faster diode recovery; versus FF75R12ME4, it offers discrete layout control and lower gate drive complexity but requires external diode routing.

Availability

IKQ75N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and string inverter designs requiring stable component supply, long-lifecycle assurance, and JEDEC-validated reliability.

Supply support for IKQ75N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency hard-switching applications in solar inverters, UPS systems, and industrial motor drives.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) ≥ 5.3 Ω for safe operation within the turn-off SOA. Using RG(off) = 8 Ω achieves optimal trade-off between E_off (1.76 mJ) and voltage overshoot (<100 V at 600 V V_CC). Values above 15 Ω increase switching time and risk latch-up under high dv/dt; below 5.3 Ω risks exceeding safe operating area limits.

Can IKQ75N120CH7XKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (increasing from 1.7 V at 25°C to 2.0 V at 175°C) ensures inherent current balancing across parallel devices without external emitter resistors. Layout symmetry and matched gate drive paths remain essential to avoid dynamic imbalance.

Is the diode in this device suitable for freewheeling in a boost PFC stage?

No - the integrated 7 Rapid diode is optimized for soft commutation in inverter legs, not unidirectional PFC operation. Its reverse recovery characteristics (t_rr = 149 ns, Q_rr = 2.35 µC) are insufficient for high-frequency (>100 kHz) boost PFC; dedicated SiC Schottky or ultrafast diodes are required.

What thermal interface material thickness is recommended for the isolated tab?

Infineon recommends 0.1–0.15 mm thermal pad or paste layer between the isolated collector tab and heatsink. Thicker interfaces (>0.2 mm) degrade R_th(j-c) performance (0.21–0.27 K/W), risking junction temperature exceedance at rated current; thinner layers (<0.08 mm) risk void formation and uneven pressure distribution.

IKQ75N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 82 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 75A

Power - Max:: 549 W

Switching Energy:: 5.28mJ (on), 1.76mJ (off)

Input Type:: Standard

Gate Charge:: 518 nC

Td (on/off) @ 25°C:: 56ns/470ns

Test Condition:: -

Reverse Recovery Time (trr):: 149 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-U01

IKQ75N120CH7XKSA1 FAQ

1.How can I place an order for IKQ75N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ75N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ75N120CH7XKSA1 reliable?

The price and inventory of IKQ75N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ75N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ75N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ75N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ75N120CH7XKSA1?

IKQ75N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ75N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ75N120CH7XKSA1?

For technical support, including IKQ75N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ75N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKQ75N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ75N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ75N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ75N120CH7XKSA1?

All IKQ75N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ75N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ75N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ75N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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