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Infineon Technologies IKQ75N120CS6XKSA1

Part No.:
IKQ75N120CS6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKQ75N120CS6XKSA1.pdf
Description:
IGBT TRENCH FS 1200V 150A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,266

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Product details

Overview

IKQ75N120CS6XKSA1 from Infineon is a 1200 V, 75 A TRENCHSTOP™ IGBT6 with integrated soft-recovery anti-parallel diode in PG-TO247-3-46 package. It delivers high-speed soft switching, low gate charge (530 nC), and 175 °C max junction temperature for industrial UPS, solar string inverters, and welding systems requiring robust hard-switching performance.

For engineers reviewing the IKQ75N120CS6XKSA1 datasheet, IKQ75N120CS6XKSA1 pinout, IKQ75N120CS6XKSA1 application, or IKQ75N120CS6XKSA1 equivalent, key selection criteria include VCE(sat) = 1.85 V @ 25 °C, Eoff = 2.95 mJ, trr = 440 ns, Qrr = 4.70 µC, and Rth(j-c) = 0.17 K/W for thermal design and paralleling reliability.

Technical Context

This sixth-generation IGBT uses Trench & Fieldstop architecture to achieve low conduction loss and controlled tail current, enabling efficient operation in both hard-switched and resonant topologies. Its positive VCE(sat) temperature coefficient ensures stable current sharing during parallel operation.

The co-packed diode features very soft reverse recovery (trr = 440 ns, Qrr = 4.70 µC @ 25 °C) and low peak reverse recovery current (Irrm = 27.0 A), minimizing voltage overshoot and EMI generation during commutation.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - supports DC bus voltages up to 1000 V in three-level solar inverters and industrial UPS.
IC 75 A continuous @ Tc = 100 °C - enables compact heatsink sizing in high-power converters.
VCE(sat) 1.85 V @ 75 A, 25 °C - reduces conduction loss and improves system efficiency at rated load.
QG 530 nC - lowers gate drive power requirement and simplifies driver selection.
Eoff 2.95 mJ @ 600 V, 75 A, 25 °C - enables high-frequency switching with manageable turn-off losses.
Rth(j-c) 0.17 K/W - allows direct mounting to heatsink with predictable thermal resistance for junction-to-case path.
trr / Qrr 440 ns / 4.70 µC @ 25 °C - minimizes diode-induced voltage spikes and snubber stress in inductive switching.

Pinout & Package

Package: PG-TO247-3-46 - standard 3-pin through-hole package with isolated collector tab, optimized for high-current, high-voltage industrial applications and compatible with automated assembly and thermal interface materials.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side current path Electrically connected to metal tab; requires insulated mounting and direct heatsink contact for thermal management.
Gate (G) Control input for IGBT channel Low-impedance MOS-controlled terminal; sensitive to ESD and requires < ±20 V gate drive with proper RC snubbing.
Emitter (E) Reference node for gate drive and current return Shared emitter for IGBT and anti-parallel diode; must be routed with low-inductance layout to suppress voltage spikes.

Key Features

Feature Design Value
High-speed soft switching Reduces EMI and voltage overshoot via controlled fall time (tf = 31 ns) and low tail current.
Positive VCE(sat) tempco Enables stable current sharing in parallel configurations without external current-balancing resistors.
Integrated anti-parallel diode Soft-recovery diode with trr = 440 ns and Qrr = 4.70 µC eliminates need for discrete freewheeling diode.
175 °C maximum junction temperature Extends usable thermal margin in high-ambient environments such as enclosed welders or energy storage cabinets.
Pb-free, RoHS-compliant plating Meets industrial environmental compliance requirements without compromising solderability or long-term reliability.

Applications

Industrial UPS Three-Level Solar String Inverter

Use Scenario: Online double-conversion UPS delivering clean, regulated AC output during grid failure or fluctuation.

IC Role / Device Role / Timing Role: Main inverter switch in IGBT-based H-bridge output stage handling 10–50 kVA loads.

Use Value: Low VCE(sat) and soft switching reduce conduction + switching losses, improving battery runtime and thermal footprint.

Use Scenario: High-efficiency DC-to-AC conversion in distributed photovoltaic systems with >1000 V DC input.

IC Role / Device Role / Timing Role: Upper-leg switch in NPC (Neutral Point Clamped) topology operating at 16–20 kHz switching frequency.

Use Value: 1200 V rating and low Eoff enable high-voltage, high-frequency operation while maintaining Si-based cost advantage over SiC.

Charger for Energy Storage Systems Industrial Welding Power Supply

Use Scenario: Bi-directional AC/DC converter charging lithium-ion battery banks in microgrids or EV fast-charging stations.

IC Role / Device Role / Timing Role: Active rectifier switch in Vienna or T-type PFC stage managing bidirectional 3-phase power flow.

Use Value: Integrated diode and soft recovery support zero-voltage switching transitions, reducing stress on passive components and improving reliability.

Use Scenario: Inverter-based arc welding equipment requiring precise current control and rapid duty-cycle response.

IC Role / Device Role / Timing Role: Primary switching device in inverter stage driving high-current transformer primary at 20–50 kHz.

Use Value: Short circuit withstand time (tSC = 3 µs) and rugged SOA allow safe operation under transient overload and arc re-ignition events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW40N120H3 1200 V, 40 A, lower current rating; higher VCE(sat) (2.1 V); no integrated diode. Suitable for lower-power welders or auxiliary inverters where discrete diode placement is acceptable. Select when board space permits separate diode layout and thermal budget allows higher conduction loss.
FF75R12RT4 1200 V, 75 A, 4-pin TO247 package with Kelvin emitter; lower Eoff (2.3 mJ); higher cost. Better suited for high-frequency, high-precision motor drives requiring ultra-low switching loss and gate control fidelity. Choose when gate drive stability and sub-µs timing accuracy outweigh cost and layout complexity constraints.

Compared with IKW40N120H3, IKQ75N120CS6XKSA1 offers higher current capability and integrated diode convenience; versus FF75R12RT4, it trades Kelvin emitter precision for lower BOM count and cost-ideal for industrial UPS and solar where robustness and integration dominate.

Availability

IKQ75N120CS6XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and energy storage chargers requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKQ75N120CS6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKQ75N120CS6XKSA1 belongs to the TRENCHSTOP™ IGBT6 family, designed specifically for high-efficiency, high-reliability industrial power conversion where soft switching, thermal robustness, and paralleling capability are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 4.0 Ω for characterization, but practical designs use 5–10 Ω to balance switching speed and voltage overshoot. At 175 °C, td(off) increases to 370 ns and Eoff rises to 5.30 mJ-so higher RG values (>12 Ω) risk excessive loss and thermal runaway in high-frequency operation.

Can IKQ75N120CS6XKSA1 be used in parallel configurations?

Yes-its positive VCE(sat) temperature coefficient ensures inherent current balancing across multiple devices. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical heatsink mounting pressure to maintain uniform thermal resistance (Rth(j-c) = 0.17 K/W).

Does the integrated diode support reverse conduction in bidirectional topologies?

Yes-the co-packed diode is rated for IF = 75 A continuous and IFpuls = 300 A, with soft recovery (trr = 440 ns, Qrr = 4.70 µC). It is fully qualified for freewheeling and regenerative braking in Vienna rectifiers and bidirectional DC-DC converters.

What is the short-circuit withstand capability under real-world conditions?

Rated for tSC = 3 µs at VGE = 15 V and VCC ≤ 500 V, with ≤1000 allowed events and ≥1 s between faults. This applies only when junction temperature is ≤150 °C-designs must include fast desaturation detection and active shutdown to meet this spec reliably.

IKQ75N120CS6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
150 A
Current - Collector Pulsed (Icm):
300 A
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 75A
Power - Max:
880 W
Switching Energy:
5.15mJ (on), 2.95mJ (off)
Input Type:
Standard
Gate Charge:
530 nC
Td (on/off) @ 25°C:
34ns/300ns
Test Condition:
600V, 75A, 4Ohm, 15V
Reverse Recovery Time (trr):
440 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-46

IKQ75N120CS6XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKQ75N120CS6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKQ75N120CS6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ75N120CS6XKSA1 is usually 5 days.

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IKQ75N120CS6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKQ75N120CS6XKSA1?

For technical support, including IKQ75N120CS6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ75N120CS6XKSA1 requirements.

6.How does Aetrix verify that IKQ75N120CS6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ75N120CS6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ75N120CS6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ75N120CS6XKSA1?

All IKQ75N120CS6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ75N120CS6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ75N120CS6XKSA1 part is unused and in its original packaging.

Return procedure for IKQ75N120CS6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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