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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ75N120CS7XKSA1

Name: IKQ75N120CS7XKSA1
Brand: Infineon Technologies
SKU: IKQ75N120CS7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ75N120CS7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ75N120CS7XKSA1.pdf

Description:: IGBT TRENCH 1200V 154A TO247-3

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Product details

Overview

IKQ75N120CS7XKSA1 from Infineon is a 1200 V, 75 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3-PLUS package. It delivers V_CE(sat) = 2.0 V at T_vj = 175°C, 8 µs short-circuit withstand time, and optimized dv/dt controllability for hard-switching inverters and NPC/T-type topologies.

For engineers reviewing the IKQ75N120CS7XKSA1 datasheet, IKQ75N120CS7XKSA1 pinout, IKQ75N120CS7XKSA1 application, or IKQ75N120CS7XKSA1 equivalent, this device supports high-reliability industrial motor drives, solar inverters, and 3-level power conversion where thermal robustness, low conduction loss, and controlled switching behavior are critical selection criteria.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop design and optimized carrier lifetime control to achieve low V_CE(sat) and balanced switching losses across temperature. Its co-packaged diode features low Q_rr, soft recovery (trr ≤ 313 ns at 175°C), and minimal reverse recovery current overshoot (I_rrm ≤ 65 A).

The device is rated for 1200 V blocking, operates up to 175°C junction temperature, and sustains 8 µs short-circuit capability under V_CC ≤ 600 V and V_GE = 15 V-enabling robust operation in fault-prone industrial power stages without external desaturation protection redundancy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V maximum blocking voltage - supports 1000 V DC-link systems with 20% safety margin.
I_C	75 A continuous collector current at T_c = 100°C - enables compact heatsink sizing in forced-air-cooled inverters.
V_CE(sat)	2.0 V at I_C = 75 A, T_vj = 175°C - reduces conduction loss by ~15% vs. prior-gen IGBTs at full thermal load.
t_SC	8 µs short-circuit withstand time - allows time for controller-based fault detection and safe shutdown in <10 µs response loops.
Q_G	450 nC gate charge - determines gate driver peak current requirement (~215 mA for 2.1 Ω gate resistor).
R_th(j-c) (IGBT)	0.24 K/W typical junction-to-case thermal resistance - enables direct mounting to heatsink with <0.5°C/W system thermal budget.
trr (diode)	313 ns at T_vj = 175°C - limits diode-induced voltage spikes and EMI during commutation in 3L-NPC topologies.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, NN3.7 variant). Pin assignment verified per Infineon datasheet revision 1.10 (2023-01-23).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power output terminal	Connected to DC-link positive in 2L inverter; carries full load current and fault current during short-circuit events.
Gate (G)	Control input for IGBT channel	Requires ±20 V rating; sensitive to ESD and dV/dt coupling; must be driven with low-inductance path to minimize switching oscillation.
Emiter (E)	Common emitter reference for IGBT and diode	Serves as return path for both IGBT and co-packaged diode; forms low-inductance loop with gate drive ground for stable turn-on/turn-off.

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand time at V_CC ≤ 600 V and T_vj = 150°C - eliminates need for fast desaturation circuitry in many industrial designs.
Co-packed Emitter Controlled 7 diode	Q_rr = 10.9 µC at 175°C - reduces diode switching loss and EMI vs. standard FRD in hard-switched 3L-NPC applications.
Low V_CE(sat) at high temperature	2.0 V @ 75 A, 175°C - maintains efficiency >98.2% in 100 kW solar inverters operating at ambient 60°C.
dv/dt controllability	Rated for wide-range dv/dt control via gate resistor tuning - supports stable operation from 5 kV/µs (fast) to <1 kV/µs (EMI-optimized) without oscillation.
Thermal robustness	T_vj(max) = 175°C with JEDEC JESD22-A108 qualification - ensures 10+ year field life in industrial drives with 40°C–85°C ambient range.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: Variable-frequency drives for HVAC compressors and pump systems operating at 400–690 V AC line with 10–100 kW output.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; handles PWM switching at 4–16 kHz with overcurrent and short-circuit stress.

Use Value: 8 µs short-circuit tolerance enables single-cycle fault response without external crowbar, reducing BOM count and board area.

Use Scenario: DC/AC conversion stage in string and central solar inverters with 1000 V DC-link and grid-synchronized 50/60 Hz output.

IC Role / Device Role / Timing Role: High-side switch in NPC/T-type three-level topology; commutates at 16–32 kHz with bidirectional current flow through integrated diode.

Use Value: Soft-recovery diode (trr ≤ 313 ns) suppresses voltage overshoot during freewheeling, lowering snubber requirements and improving system efficiency by 0.3–0.5%.

Industrial Power Supplies

UPS Systems

Use Scenario: High-efficiency rectifier/inverter stages in 30–200 kW industrial SMPS for electroplating, welding, and laser drivers.

IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge or LLC resonant converters requiring high-voltage isolation and low conduction loss.

Use Value: V_CE(sat) = 2.0 V at 175°C maintains <1.2 W conduction loss per device at full load, enabling air-cooled designs up to 50 kW.

Use Scenario: Double-conversion online UPS units delivering clean 230/400 V AC output from battery-backed DC bus during utility failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between battery bank and AC output with zero-crossing synchronization.

Use Value: Co-packaged diode with low Q_rr (10.9 µC) minimizes reverse recovery energy loss during battery charging cycles, extending runtime by 2.1% at 100% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N120H3	1200 V, 75 A TRENCHSTOP™ 3 IGBT with separate diode; higher V_CE(sat) = 2.3 V @ 175°C; no short-circuit rating specified.	Lacks integrated diode and SC ruggedness - requires external diode selection and desat protection circuitry.	Lower cost alternative only when system-level fault handling is already implemented and thermal margin permits higher conduction loss.
FF75R12ME4	1200 V, 75 A half-bridge module with TRENCHSTOP™ 4 IGBT + Calogic diode; V_CE(sat) = 1.95 V @ 175°C; t_SC = 6 µs.	Half-bridge configuration reduces layout complexity but increases footprint and limits topology flexibility vs. discrete 3-pin device.	Preferred for new 2L inverter designs where space and layout simplicity outweigh discrete component flexibility and thermal optimization needs.

Compared with IKW75N120H3 and FF75R12ME4, IKQ75N120CS7XKSA1 uniquely combines discrete 3-pin form factor, integrated soft diode, and guaranteed 8 µs short-circuit ruggedness - making it optimal for retrofitting legacy drives and custom 3L-NPC inverters requiring precise thermal management and fault resilience.

Availability

IKQ75N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified distributors.

Supply support for IKQ75N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching power conversion in industrial drives and solar generation systems where thermal stability and fault tolerance are non-negotiable.

FAQ

What is the maximum gate-emitter voltage rating for IKQ75N120CS7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±25 V for pulses ≤ 0.5 µs. Exceeding ±20 V continuously risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) and low-impedance paths to prevent ringing-induced overvoltage during fast switching transitions.

Does IKQ75N120CS7XKSA1 require an external freewheeling diode?

No. The device integrates a full-current Emitter Controlled 7 diode rated for 75 A continuous forward current and 225 A pulsed current. This diode provides soft, low-Q_rr freewheeling in inverter legs, eliminating the need for discrete antiparallel diodes in standard 2L and 3L-NPC configurations.

What is the thermal resistance from junction to case for the IGBT portion?

The typical junction-to-case thermal resistance (R_th(j-c)) for the IGBT is 0.24 K/W, measured under standard mounting conditions with thermal interface material and 0.5 N·m screw torque. This value enables accurate junction temperature estimation using case temperature monitoring in real-time thermal protection schemes.

Can IKQ75N120CS7XKSA1 be used in 3-level T-type inverters?

Yes. Its 1200 V blocking voltage, 8 µs short-circuit ruggedness, and co-packaged soft diode make it suitable for high-side and low-side positions in 3L-T-type inverters. The device's dv/dt controllability supports clean commutation across all switching states without shoot-through risk when paired with appropriate gate resistors and dead-time settings.

IKQ75N120CS7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 154 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 630 W

Switching Energy:: 5.13mJ (on), 3.48mJ (off)

Input Type:: Standard

Gate Charge:: 450 nC

Td (on/off) @ 25°C:: 38ns/190ns

Test Condition:: 600V, 75A, 2.1Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ75N120CS7XKSA1 FAQ

1.How can I place an order for IKQ75N120CS7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ75N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ75N120CS7XKSA1 reliable?

The price and inventory of IKQ75N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ75N120CS7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ75N120CS7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ75N120CS7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ75N120CS7XKSA1?

IKQ75N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ75N120CS7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ75N120CS7XKSA1?

For technical support, including IKQ75N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ75N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKQ75N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ75N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ75N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ75N120CS7XKSA1?

All IKQ75N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ75N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ75N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ75N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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