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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ75N120CT2XKSA1

Name: IKQ75N120CT2XKSA1
Brand: Infineon Technologies
SKU: IKQ75N120CT2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ75N120CT2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ75N120CT2XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 150A TO247

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Product details

Overview

IKQ75N120CT2XKSA1 from Infineon is a 1200 V, 75 A TRENCHSTOP™ 2 IGBT with integrated emitter-controlled diode, optimized for high-efficiency industrial motor drives and solar inverters. It delivers 1.75 V V_CE(sat) at 25°C, 10 µs short-circuit withstand time at 175°C junction temperature, and features a positive temperature coefficient for stable paralleling. Used in three-level solar string inverters and servo drives where low conduction loss and soft switching are critical.

For engineers reviewing the IKQ75N120CT2XKSA1 datasheet, IKQ75N120CT2XKSA1 pinout, IKQ75N120CT2XKSA1 application, or IKQ75N120CT2XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode reverse recovery charge (Q_rr = 5.10 µC at 25°C), thermal resistance (R_th(j-c) = 0.16 K/W), and gate charge (Q_G = 370 nC) for gate driver sizing.

Technical Context

This IGBT employs TRENCHSTOP™ 2 trench-gate field-stop technology to achieve low saturation voltage while maintaining robust short-circuit capability. Its co-packed emitter-controlled diode provides full-current-rated soft recovery (t_rr = 320 ns, Q_rr = 5.10 µC at 25°C) and low reverse recovery current overshoot (I_rrm = 29.0 A).

The device operates up to 175°C junction temperature with a positive V_CE(sat) temperature coefficient-enabling reliable parallel operation-and exhibits low EMI due to controlled switching waveforms. Gate threshold voltage (V_GE(th) = 5.1–6.5 V) ensures noise-immune turn-on under industrial conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC-link voltages up to 960 V in three-level topologies with 20% margin
I_C	75 A continuous - rated at T_c = 137°C, enabling compact heatsink design in GPD and servo systems
V_CE(sat)	1.75 V @ 75 A, 25°C - reduces conduction loss by ~25% vs. first-gen TRENCHSTOP IGBTs at same rating
t_SC	10 µs @ V_GE = 15 V, T_vj = 175°C - enables robust protection without external desaturation circuitry
Q_G	370 nC - determines gate driver peak current requirement (~62 A for 6 Ω gate resistor, 15 V swing)
R_th(j-c)	0.16 K/W - allows 784 W power dissipation at ΔT = 125 K (T_c = 50°C → T_vj = 175°C)
trr / Q_rr	320 ns / 5.10 µC @ 25°C - minimizes diode commutation loss and voltage overshoot in hard-switched inverters

Pinout & Package

PG-TO247-3-46 package: isolated tab, 3-pin through-hole outline with collector (pin 1), gate (pin 2), and emitter (pin 3). Case is electrically connected to collector; mounting surface must be insulated unless collector is at system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Main high-side power terminal; thermally coupled to heatsink; requires electrical isolation unless referenced to system ground
Pin 2	Gate (G)	Control input; requires low-inductance gate loop and 15 V ±10% drive for specified switching performance
Pin 3	Emitter (E)	Power return path for IGBT and anti-parallel diode; serves as reference for gate drive and current sensing

Key Features

Feature	Design Value
Low V_CE(sat)	1.75 V at 75 A/25°C reduces conduction loss by >30% vs. comparable 1200 V IGBTs, directly improving inverter efficiency
Soft fast-recovery diode	Q_rr = 5.10 µC and t_rr = 320 ns minimize voltage spikes and EMI during freewheeling in motor drives
Positive V_CE(sat) tempco	Enables stable current sharing across parallel devices without active current balancing circuits
10 µs short-circuit rating	Supports fixed-time fault response in industrial drives without requiring ultra-fast detection hardware
Pb-free RoHS compliance	Meets EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for reflow compatibility

Applications

Industrial Motor Drives

Solar String Inverters

Use Scenario: Three-phase variable-frequency drives for pumps, fans, and compressors operating at 400–690 V AC line voltage.

IC Role / Device Role / Timing Role: High-side switch in 2-level or 3-level NPC inverter stage; handles 75 A RMS output current with <1.8 V conduction drop.

Use Value: Enables >98.2% peak efficiency at 75% load due to low V_CE(sat) and soft diode recovery, reducing heatsink size by 35% vs. legacy IGBTs.

Use Scenario: DC/AC conversion stage in 15–25 kW string inverters with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: Upper-leg switch in three-level T-type inverter; blocks 1200 V DC-link while switching at 16 kHz with minimal tail current.

Use Value: Achieves <0.5% THD at full load and meets IEC 62109-1 anti-islanding requirements via precise switching timing control and low EMI.

Servo Drive Power Stages

Commercial Vehicle Traction Converters

Use Scenario: High-bandwidth position-control amplifiers for robotics and CNC axes, requiring fast dynamic response and low torque ripple.

IC Role / Device Role / Timing Role: Half-bridge leg in 3-phase inverter driving permanent-magnet synchronous motors (PMSM) up to 15 kW.

Use Value: Delivers <2 µs turn-off delay variation across temperature, ensuring sub-100 ns current-loop timing accuracy for <0.05° position error.

Use Scenario: Onboard DC/AC converters for electric auxiliary systems in Class 3–5 commercial trucks and agricultural machinery.

IC Role / Device Role / Timing Role: Main inverter switch handling intermittent 75 A peak loads at ambient up to 105°C with derated case temperature.

Use Value: Sustains 175°C junction operation under transient overload, eliminating need for forced-air cooling in space-constrained chassis mounts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N120B3	Higher V_CE(sat) (2.1 V), lower Q_G (280 nC), no integrated diode	Requires external fast diode; better suited for resonant topologies where gate drive loss dominates	Select when minimizing gate drive power is prioritized over conduction loss and board area
STMicroelectronics STGW75H120DF2	Similar V_CE(sat) (1.7 V), higher t_SC (15 µs), slower diode (Q_rr = 8.2 µC)	More robust short-circuit tolerance but higher diode losses in hard-switched PWM	Select for applications demanding extended fault hold time and less sensitive to diode recovery losses

Compared with IXGN75N120B3 and STGW75H120DF2, IKQ75N120CT2XKSA1 offers the lowest combined conduction + diode recovery loss in hard-switched industrial inverters, making it optimal for efficiency-critical 1200 V systems where integrated diode simplification is valued.

Availability

IKQ75N120CT2XKSA1 is available at Aetrix Electronics and suitable for general-purpose drives, servo drives, and three-level solar string inverters requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for IKQ75N120CT2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 2 IGBT family, engineered specifically for high-efficiency, high-reliability industrial motor control and solar power conversion where low V_CE(sat), soft switching, and 175°C operation are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IKQ75N120CT2XKSA1?

The absolute maximum gate-emitter voltage is ±20 V per the datasheet. Operation above +15 V or below –10 V risks irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent Miller-induced false turn-on during high dv/dt transitions.

Does IKQ75N120CT2XKSA1 require an external freewheeling diode?

No. It integrates a soft, fast-recovery emitter-controlled diode rated for full 75 A forward current, eliminating the need for an external diode in standard inverter half-bridge configurations. The diode's Q_rr of 5.10 µC and t_rr of 320 ns at 25°C are fully characterized and co-optimized with the IGBT die.

How does thermal resistance impact heatsink selection for this IGBT?

With R_th(j-c) = 0.16 K/W and P_tot = 237 W at T_c = 137°C, the required heatsink-to-ambient thermal resistance must be ≤ 0.32 K/W to maintain T_vj ≤ 175°C under worst-case ambient (50°C) and airflow (2 m/s). This corresponds to a medium-sized extruded aluminum heatsink with forced convection.

Can IKQ75N120CT2XKSA1 be paralleled with identical units?

Yes. Its positive temperature coefficient of V_CE(sat) ensures inherent current sharing across paralleled devices. Layout symmetry (matched gate and emitter inductance), identical gate resistors (±5%), and direct-mount thermal interface are required. Derating to 90% of total rated current per paralleled pair is recommended for reliability.

IKQ75N120CT2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 150 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 75A

Power - Max:: 938 W

Switching Energy:: 6.7mJ (on), 4.1mJ (off)

Input Type:: Standard

Gate Charge:: 370 nC

Td (on/off) @ 25°C:: 37ns/328ns

Test Condition:: 600V, 75A, 6Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ75N120CT2XKSA1 FAQ

1.How can I place an order for IKQ75N120CT2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ75N120CT2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ75N120CT2XKSA1 reliable?

The price and inventory of IKQ75N120CT2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ75N120CT2XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ75N120CT2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ75N120CT2XKSA1 transactions.

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4.How is shipping managed for IKQ75N120CT2XKSA1?

IKQ75N120CT2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ75N120CT2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ75N120CT2XKSA1?

For technical support, including IKQ75N120CT2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ75N120CT2XKSA1 requirements.

6.How does Aetrix verify that IKQ75N120CT2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ75N120CT2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ75N120CT2XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ75N120CT2XKSA1?

All IKQ75N120CT2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ75N120CT2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ75N120CT2XKSA1 part is unused and in its original packaging.

Return procedure for IKQ75N120CT2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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