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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQB120N75CP2AKSA1

Name: IKQB120N75CP2AKSA1
Brand: Infineon Technologies
SKU: IKQB120N75CP2AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQB120N75CP2AKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQB120N75CP2AKSA1.pdf

Description:: IGBT 750V 150A TO247-3

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Product details

Overview

IKQB120N75CP2AKSA1 from Infineon is a short-circuit rugged 750 V EDT2 IGBT co-packed with a full-current soft/fast recovery diode in a PG-TO247-3-PLUS package. It delivers 120 A continuous collector current at Tc = 120 °C, 1.4 V typical V_CE(sat) at 120 A/15 V, 3 µs short-circuit withstand time, and is qualified for industrial applications per JEDEC47/20/22 - used in CAV powertrain control modules and general-purpose drives.

For engineers reviewing the IKQB120N75CP2AKSA1 datasheet, IKQB120N75CP2AKSA1 pinout, IKQB120N75CP2AKSA1 application, or IKQB120N75CP2AKSA1 equivalent, key selection criteria include V_CE = 750 V rating, low switching losses (E_on = 6.4 mJ, E_off = 3.4 mJ @ 25 °C), reflow-solderable backside (245 °C, 3×), integrated diode VF = 1.8 V, and thermal resistance R_th(j-c) = 0.26 K/W (IGBT) / 0.45 K/W (diode).

Technical Context

This device implements Infineon's EDT2 (Enhanced Diode Technology 2) IGBT architecture, featuring optimized carrier lifetime control for balanced conduction and switching losses. Its gate charge Q_G = 481 nC and low C_res = 59 pF support hard-switching operation up to 10 kHz with controlled dv/dt and reduced EMI.

The integrated diode exhibits soft reverse recovery (trr = 259 ns @ 25 °C, 1000 A/µs) and low Q_rr = 3.2 µC, minimizing voltage overshoot and commutation losses. Both IGBT and diode share a common thermal path via the insulated metal baseplate, enabling precise junction temperature monitoring and parallel operation stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	750 V - supports DC bus voltages up to 600 V in 3-phase inverters with 25% safety margin
I_C (cont.)	120 A @ T_c = 120 °C - enables compact heatsink design in high-power motor drives
V_CE(sat)	1.4 V typ. @ 120 A, 15 V - reduces conduction loss by ~20% vs. legacy 1.7 V IGBTs at same current
t_SC	3 µs @ V_CC ≤ 450 V, T_vj = 125 °C - allows robust fault handling without external desaturation circuitry
R_th(j-c) (IGBT)	0.26 K/W - enables direct thermal coupling to heatsink for <100 °C ΔT at 211 W dissipation
V_F (diode)	1.8 V typ. @ 120 A, 25 °C - lowers forward loss in freewheeling phase of inverter leg
trr	259 ns @ 450 V, 120 A, -di_F/dt = 1000 A/µs - ensures soft recovery with minimal voltage spike and EMI

Pinout & Package

PG-TO247-3-PLUS package with insulated metal baseplate, reflow-solderable backside (245 °C, 3×), and pins plated for electrical resistance welding. Pin 1: Gate (G), Pin 2: Collector (C), Pin 3: Emitter (E). The emitter terminal is internally connected to the diode cathode, forming a standard half-bridge switch configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	IGBT Gate	Controls IGBT turn-on/off; requires ±20 V max gate drive; low input capacitance (C_ies = 12980 pF) eases driver sizing
Pin 2 (C)	IGBT Collector / Diode Anode	High-side connection point; shares thermal path with diode anode; rated for 750 V repetitive blocking
Pin 3 (E)	IGBT Emitter / Diode Cathode	Common emitter node; serves as return path for both IGBT and diode currents; electrically isolated from case

Key Features

Feature	Design Value
Short-circuit ruggedness	3 µs withstand time at 125 °C junction temperature - eliminates need for fast desat detection in many industrial drives
Integrated diode	Full-rated 120 A soft/fast recovery diode co-packaged - removes discrete diode placement, layout parasitics, and thermal mismatch
Reflow-solderable baseplate	245 °C compatible backside - enables automated assembly without solder paste voiding or delamination risk
Low switching energy	E_on + E_off = 9.8 mJ @ 25 °C - reduces heat generation in 10 kHz hard-switched inverters, easing thermal management
Optimized for hard switching	Controlled tail current and low C_res (59 pF) - minimizes dv/dt-induced crosstalk and gate oscillation in high-density layouts

Applications

CAV Powertrain Control

Industrial Motor Drives

Use Scenario: High-reliability traction inverter module for commercial vehicle electrification, operating at 400–600 V DC bus with 10 kHz PWM.

IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase inverter leg, delivering torque-controlled motor current with short-circuit fault tolerance.

Use Value: 3 µs short-circuit capability enables safe shutdown without external protection, while 1.4 V V_CE(sat) cuts conduction loss by 18 W vs. 1.7 V alternatives at 120 A.

Use Scenario: General-purpose variable-frequency drive (VFD) for HVAC compressors and pumps, requiring robust operation across ambient temperatures from -25 °C to 70 °C.

IC Role / Device Role / Timing Role: Main switching element in 2-level inverter topology, handling 120 A RMS output current with soft-diode freewheeling.

Use Value: Integrated diode with trr = 259 ns and Q_rr = 3.2 µC reduces voltage overshoot by >35 V vs. discrete diode solutions, lowering snubber requirements.

Solar Inverter Stages

UPS Output Inverters

Use Scenario: DC-AC stage in string inverters with ungrounded PV arrays, demanding high-voltage blocking and low leakage (I_CES = 200 µA @ 25 °C).

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, operating at 750 V blocking with 10–16 kHz switching frequency.

Use Value: 750 V V_CE rating provides 25% margin over 600 V DC link, while R_th(j-c) = 0.26 K/W enables stable operation at T_c = 105 °C without derating.

Use Scenario: Online double-conversion UPS output stage delivering clean 50/60 Hz sine wave under dynamic load steps and battery backup conditions.

IC Role / Device Role / Timing Role: Fast-switching inverter switch with integrated diode for bidirectional energy flow during transfer and regeneration.

Use Value: Low E_off = 3.4 mJ and soft diode recovery reduce total switching loss by 22% vs. standard IGBT+diode pairs, improving system efficiency to >95.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	650 V V_CE, 40 A I_C, lower V_CE(sat) (1.35 V), no integrated diode	Requires external diode; limited to ≤500 V DC bus systems	Select when lower conduction loss at reduced voltage and higher switching frequency (>20 kHz) are prioritized
FF600R12ME4	1200 V V_CE, 600 A I_C, dual IGBT+diode in 62 mm module, higher R_th(j-c) (0.13 K/W)	Module-level solution requiring gate driver isolation and complex thermal interface	Select for multi-kW industrial drives where paralleling and serviceability outweigh single-device simplicity

Compared with IKW40N65ES5, IKQB120N75CP2AKSA1 offers 100 V higher blocking and integrated diode but trades off switching speed; versus FF600R12ME4, it delivers identical current rating in a fraction of the footprint and cost, though with lower voltage headroom and no built-in NTC.

Availability

IKQB120N75CP2AKSA1 is available at Aetrix Electronics and suitable for CAV powertrain control modules, industrial motor drives, and solar inverter stages requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQB120N75CP2AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's EDT2 IGBT product line, engineered specifically for high-efficiency, high-reliability industrial and automotive traction inverters requiring short-circuit ruggedness, low-loss switching, and integrated diode functionality.

FAQ

What is the maximum allowable gate-emitter voltage for IKQB120N75CP2AKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating of ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V / –8 V to ensure reliable turn-on and fast, low-loss turn-off while maintaining noise immunity.

Does IKQB120N75CP2AKSA1 require a negative gate voltage for turn-off?

No, zero-volt turn-off is functional but not recommended; a negative gate voltage (–5 V to –8 V) is advised to improve noise immunity and prevent spurious turn-on during high dv/dt commutation events. The device's V_GE(th) = 5.0–6.5 V ensures robust threshold margin under typical operating conditions.

Can the integrated diode be used independently of the IGBT?

Yes - the diode is fully rated for 120 A continuous forward current and 750 V reverse blocking, with independent thermal and electrical characteristics. Its cathode is tied to the emitter terminal (Pin 3), allowing standalone use as a freewheeling or anti-parallel diode in synchronous rectifier or boost converter topologies.

What is the thermal resistance from junction to case for the diode portion?

The diode's junction-to-case thermal resistance is R_th(j-c) = 0.45 K/W, measured under specified test conditions (JEDEC 51-14). This value applies when heat flows from the diode die through the shared TO247-3-PLUS baseplate; it must be combined with heatsink thermal resistance to calculate actual diode junction temperature under load.

IKQB120N75CP2AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 750 V

Current - Collector (Ic) (Max):: 150 A

Current - Collector Pulsed (Icm):: 360 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 120A

Power - Max:: 577 W

Switching Energy:: 6.4mJ (on), 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 481 nC

Td (on/off) @ 25°C:: 57ns/285ns

Test Condition:: 450V, 120A, 4.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-51

IKQB120N75CP2AKSA1 FAQ

1.How can I place an order for IKQB120N75CP2AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQB120N75CP2AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQB120N75CP2AKSA1 reliable?

The price and inventory of IKQB120N75CP2AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQB120N75CP2AKSA1 is usually 5 days.

3.What payment methods are accepted for IKQB120N75CP2AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQB120N75CP2AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQB120N75CP2AKSA1?

IKQB120N75CP2AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQB120N75CP2AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQB120N75CP2AKSA1?

For technical support, including IKQB120N75CP2AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQB120N75CP2AKSA1 requirements.

6.How does Aetrix verify that IKQB120N75CP2AKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQB120N75CP2AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQB120N75CP2AKSA1 meets industry standards.

7.What is the process for return or replacement of IKQB120N75CP2AKSA1?

All IKQB120N75CP2AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQB120N75CP2AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQB120N75CP2AKSA1 part is unused and in its original packaging.

Return procedure for IKQB120N75CP2AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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