Infineon Technologies IKQB160N75CP2AKSA1

Overview

IKQB160N75CP2AKSA1 from Infineon is a short-circuit rugged 750 V EDT2 IGBT co-packed with a full-current soft/fast recovery diode in a PG-TO247-3-PLUS package. It delivers 160 A continuous collector current at Tc = 125 °C, 1.4 V typical V_CE(sat) at 15 V gate drive and 25 °C, 3 µs short-circuit withstand time, and is optimized for hard-switching topologies up to 10 kHz - used in CAV powertrain control modules and industrial motor drives.

For engineers reviewing the IKQB160N75CP2AKSA1 datasheet, IKQB160N75CP2AKSA1 pinout, IKQB160N75CP2AKSA1 application, or IKQB160N75CP2AKSA1 equivalent, key selection criteria include V_CE rating (750 V), I_C derating vs. case temperature, short-circuit robustness, co-packaged diode recovery performance (t_rr = 255 ns @ 25 °C), and reflow-solderable backside thermal pad compatibility.

Technical Context

This device integrates an EDT2-generation trench-gate field-stop IGBT and a matched soft-recovery freewheeling diode in a single isolated TO247-3-PLUS package. The IGBT features low conduction loss (V_CE(sat) = 1.4 V typ.) and low switching energy (E_on = 9.7 mJ, E_off = 5.2 mJ @ 450 V/160 A/25 °C), while the diode provides low Q_rr (4.2 µC) and controlled reverse recovery (I_rrm = 29.6 A).

The package enables high-power density mounting via reflow soldering at 245 °C (3×), with 0.2 K/W IGBT and 0.36 K/W diode junction-to-case thermal resistance. Its 13 nH internal emitter inductance supports stable high-di/dt switching in hard-switched inverters up to 10 kHz.

Key Specifications

Pinout & Package

PG-TO247-3-PLUS package with isolated collector tab, reflow-solderable copper backside, and 3-pin through-hole footprint (Collector, Gate, Emitter). Pin 1 = Collector (tab), Pin 2 = Gate, Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Compared with IXGN160N75A3 and STGW15H75DF, IKQB160N75CP2AKSA1 uniquely combines 160 A current rating, integrated soft diode, reflow-solderable thermal pad, and 3 µs short-circuit ruggedness - making it the only option qualified for high-power industrial inverters requiring both reliability and automated assembly.

Availability

IKQB160N75CP2AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, CAV powertrain control modules, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reflow compatibility.

Supply support for IKQB160N75CP2AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's EDT2 high-voltage IGBT portfolio, designed specifically for high-efficiency, high-reliability hard-switching inverters operating at 600–1000 V DC bus with demanding thermal and fault-tolerance requirements.

FAQ

What is the maximum allowable gate-emitter voltage for IKQB160N75CP2AKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient tolerance up to ±30 V for pulses ≤10 µs (duty cycle <1%). Exceeding ±20 V continuously risks oxide degradation and threshold shift. Gate drive circuits must include clamping (e.g., Zener diodes) and low-inductance layout to prevent ringing-induced overvoltage.

Does IKQB160N75CP2AKSA1 require a negative gate voltage for turn-off?

No - the device is fully compatible with 0 V/15 V gate drive. However, applying –5 V to –10 V during off-state improves noise immunity and prevents spurious turn-on under high dv/dt. The gate threshold voltage (V_GE(th)) ranges from 5.0 V to 6.5 V, so 0 V gate bias provides sufficient margin against false triggering.

How does the integrated diode differ from standard ultrafast diodes in terms of recovery behavior?

This co-packed diode exhibits soft reverse recovery (low di/dt peak, smooth current decay) and low Q_rr (4.2 µC @ 25 °C), resulting in reduced voltage overshoot and EMI. Unlike hard-recovery diodes, it avoids abrupt current collapse that stresses IGBTs during commutation - enabling higher switching frequencies without snubbers.

Can IKQB160N75CP2AKSA1 be mounted using lead-free reflow soldering?

Yes - the package backside is qualified for lead-free reflow per JEDEC J-STD-020 MSL1, supporting peak temperatures up to 245 °C for three consecutive cycles. Thermal interface material is not required; direct soldering to copper heatsink pads achieves optimal R_th(j-c) = 0.2 K/W for the IGBT die.