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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQB200N75CP2AKSA1

Name: IKQB200N75CP2AKSA1
Brand: Infineon Technologies
SKU: IKQB200N75CP2AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQB200N75CP2AKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQB200N75CP2AKSA1.pdf

Description:: IGBT 750V 200A TO247-3

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Product details

Overview

IKQB200N75CP2AKSA1 from Infineon is a short-circuit rugged 750 V, 200 A EDT2 IGBT co-packed with a full-current soft/fast recovery diode in a PG-TO247-3-PLUS package. It delivers V_CE(sat) = 1.4 V at 200 A/15 V, 3 µs short-circuit withstand time, and optimized hard-switching performance up to 10 kHz for industrial motor drives.

For engineers reviewing the IKQB200N75CP2AKSA1 datasheet, IKQB200N75CP2AKSA1 pinout, IKQB200N75CP2AKSA1 application, or IKQB200N75CP2AKSA1 equivalent, key selection criteria include short-circuit robustness, low conduction loss at high junction temperature, diode reverse recovery charge (Q_rr = 4.8 µC typ.), thermal resistance (R_th(j-c) = 0.16 K/W), and reflow-solderable backside compatibility.

Technical Context

This device implements Infineon's EDT2 (Enhanced Diode Technology 2) IGBT cell structure with field-stop trench gate design, enabling low V_CE(sat) and balanced switching losses. The integrated diode features soft recovery (t_rr = 239 ns typ., Irrm = 37.4 A) and low Q_rr, minimizing voltage overshoot and EMI in hard-switched topologies.

Rated for 750 V blocking and 200 A continuous collector current at T_c = 120 °C, it supports operation up to 175 °C junction temperature with validated JEDEC JESD22-A108 reliability testing. The package enables three-cycle reflow soldering at 245 °C and supports electrical resistance welding via plated pins.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	750 V - Enables use in 600 V-class DC bus systems with 25% voltage margin for transients.
I_C	200 A continuous at T_c = 120 °C - Supports high-power motor drive inverters without forced air cooling.
V_CE(sat)	1.4 V (typ.) at 200 A/15 V/25 °C - Reduces conduction loss by ~20% vs. standard 750 V IGBTs, lowering heatsink requirements.
t_SC	3 µs short-circuit withstand time - Allows robust protection coordination with fast gate drivers in fault conditions.
Q_G	797 nC - Defines gate drive power requirement; compatible with standard ±15 V isolated gate drivers (e.g., 1ED34xx).
R_th(j-c)	0.16 K/W (IGBT) - Enables thermal interface design with <1.6 °C/W total system resistance for 175 °C max junction operation.
VF (diode)	1.8 V (typ.) at 200 A/25 °C - Low forward drop reduces diode conduction loss in freewheeling phase.
trr / Qrr	239 ns / 4.8 µC (typ.) - Soft, fast recovery minimizes turn-on voltage spikes and snubber losses in inductive loads.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, insulated tab, reflow-solderable backside, MSL1 per JEDEC J-STD-020). Pin layout matches industry-standard TO-247 footprint with enhanced creepage/clearance and reduced internal emitter inductance (L_E = 13 nH).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ bus; electrically isolated tab allows direct heatsink mounting with minimal thermal resistance.
Gate (G)	Control input for IGBT channel	Requires ±20 V max drive; low input capacitance (C_ies = 21.28 nF) enables fast switching with moderate gate resistor values.
Emitter (E)	Common reference for IGBT and diode	Shared emitter node for both devices; low-inductance layout critical for minimizing voltage spikes during hard switching.

Key Features

Feature	Design Value
Short-circuit ruggedness	3 µs withstand time at V_CC ≤ 450 V, V_GE = 15 V, T_vj = 125 °C - Enables deterministic fault handling without desaturation circuit complexity.
Co-packed diode	Full-rated 200 A soft/fast recovery diode with t_rr = 239 ns and Q_rr = 4.8 µC - Eliminates discrete diode placement, reduces layout parasitics, and improves inverter efficiency.
Reflow-solderable backside	Qualified for 245 °C reflow (3×) - Supports automated SMT assembly of high-power modules without solder paste degradation or voiding.
Plated pins	Enables electrical resistance welding - Allows secure mechanical and electrical attachment in high-vibration environments (e.g., traction inverters).
Thermal performance	R_th(j-c) = 0.16 K/W (IGBT), R_th(j-c) = 0.3 K/W (diode) - Enables compact thermal design with single heatsink for dual-device topology.

Applications

Industrial Motor Drives

CAV Powertrain Control

Use Scenario: 3-phase inverter stage in 50–100 kW variable-frequency drives for pumps, fans, and compressors.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode in 6-pulse bridge configuration operating at 4–10 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft diode recovery reduce total system losses by ≥8% vs. legacy 650 V IGBTs, extending thermal margin at full load.

Use Scenario: Traction inverter module in commercial vehicle electrification systems requiring high reliability under shock/vibration.

IC Role / Device Role / Timing Role: Main switching device in dual-motor drive architecture with active short-circuit protection and regenerative braking.

Use Value: 3 µs short-circuit rating and plated-pin weldability ensure functional safety compliance (ISO 26262 ASIL-B) without external redundancy.

Solar Inverters

UPS Systems

Use Scenario: DC–AC conversion stage in string inverters with unipolar modulation and transformerless topology.

IC Role / Device Role / Timing Role: High-efficiency switching element in H-bridge output stage, handling bidirectional current flow and leakage current management.

Use Value: 750 V rating provides sufficient margin for 1000 V DC input systems; low Q_rr minimizes reactive power loss and EMI filter size.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with zero transfer time.

IC Role / Device Role / Timing Role: Inverter leg switch in high-efficiency IGBT-based output stage operating at 5–8 kHz with precise dead-time control.

Use Value: Stable V_GE(th) (5–6.5 V) and low gate leakage (<100 nA) ensure reliable turn-on/turn-off across wide temperature range (-40 to +175 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN200N75A3	750 V, 200 A, V_CE(sat) = 1.75 V (typ.), t_SC = 10 µs, TO-247-3 package, no diode integration	Requires external diode; higher conduction loss but longer SC rating	Select when extended short-circuit immunity is prioritized over integration and thermal density.
STMicroelectronics STGY200NC75H	750 V, 200 A, V_CE(sat) = 1.55 V (typ.), t_SC = 2 µs, H2PAK-2 package, co-packed diode	Higher V_CE(sat), lower thermal resistance (R_th(j-c) = 0.12 K/W), but limited to 2× reflow cycles	Select when maximum thermal performance is required and reflow cycle count is constrained to two.

Compared with IXGN200N75A3 and STGY200NC75H, IKQB200N75CP2AKSA1 uniquely balances low conduction loss (1.4 V), integrated diode functionality, and triple-reflow capability-making it optimal for high-volume industrial inverters where assembly yield and thermal density are critical.

Availability

IKQB200N75CP2AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, CAV powertrain control modules, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKQB200N75CP2AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKQB200N75CP2AKSA1 belongs to Infineon's EDT2 IGBT product line, engineered specifically for high-efficiency, high-reliability hard-switching inverters in industrial automation and electric mobility applications.

FAQ

What is the maximum allowable gate-emitter voltage for IKQB200N75CP2AKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient tolerance up to ±30 V for pulses ≤10 µs (duty cycle <1%). Exceeding ±20 V continuously risks oxide breakdown and irreversible gate damage. Gate drive circuits must include clamping (e.g., Zener diodes) and low-impedance paths to prevent ringing-induced overvoltage.

Does IKQB200N75CP2AKSA1 require a negative gate voltage for reliable turn-off?

No, reliable turn-off is achieved with 0 V gate bias; however, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-di/dt environments. The device's V_GE(th) range (5–6.5 V) ensures robust turn-on margin even with gate drive droop under load.

Can IKQB200N75CP2AKSA1 be used in parallel configurations?

Yes, but requires strict matching of gate resistors, PCB trace inductance, and thermal mounting to ensure current sharing. The positive V_CE(sat) temperature coefficient (1.4 V → 1.7 V from 25 °C to 175 °C) supports inherent current balancing; however, dynamic imbalance during switching necessitates symmetrical layout and individual gate resistors.

What is the recommended gate resistor value for 10 kHz hard-switching operation?

A gate resistor of 4.8 Ω (as used in datasheet switching characterization) provides optimal trade-off between E_on/E_off and voltage overshoot at 10 kHz. For lower EMI, increase to 6.8–10 Ω; for faster switching, reduce to 3.3 Ω-but verify dv/dt limits (≤50 V/ns) and gate driver peak current capability (≥10 A) to avoid stress.

IKQB200N75CP2AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 750 V

Current - Collector (Ic) (Max):: 200 A

Current - Collector Pulsed (Icm):: 600 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 200A

Power - Max:: 937 W

Switching Energy:: 14.4mJ (on), 6.9mJ (off)

Input Type:: Standard

Gate Charge:: 797 nC

Td (on/off) @ 25°C:: 95ns/407ns

Test Condition:: 450V, 200A, 4.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-51

IKQB200N75CP2AKSA1 FAQ

1.How can I place an order for IKQB200N75CP2AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQB200N75CP2AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQB200N75CP2AKSA1 reliable?

The price and inventory of IKQB200N75CP2AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQB200N75CP2AKSA1 is usually 5 days.

3.What payment methods are accepted for IKQB200N75CP2AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQB200N75CP2AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQB200N75CP2AKSA1?

IKQB200N75CP2AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQB200N75CP2AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQB200N75CP2AKSA1?

For technical support, including IKQB200N75CP2AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQB200N75CP2AKSA1 requirements.

6.How does Aetrix verify that IKQB200N75CP2AKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQB200N75CP2AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQB200N75CP2AKSA1 meets industry standards.

7.What is the process for return or replacement of IKQB200N75CP2AKSA1?

All IKQB200N75CP2AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQB200N75CP2AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQB200N75CP2AKSA1 part is unused and in its original packaging.

Return procedure for IKQB200N75CP2AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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