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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW03N120H

Name: IKW03N120H
Brand: Infineon Technologies
SKU: IKW03N120H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW03N120H

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW03N120H.pdf

Description:: IGBT WITH ANTI-PARALLEL DIODE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IKW03N120H from Infineon is a 1200V, 3A high-speed IGBT with integrated soft-fast anti-parallel Emitter Controlled HE diode in PG-TO-247-3 package. It delivers 0.15mJ turn-off energy at Tj=25°C, 2.2V VCE(sat) at 3A/25°C, and 42ns diode reverse recovery time - optimized for resonant ZVS converters, lamp ballasts, and SMPS operating up to 140kHz.

For engineers reviewing the IKW03N120H datasheet, IKW03N120H pinout, IKW03N120H application, or IKW03N120H equivalent, key selection criteria include its tight parameter distribution, temperature-stable switching behavior at 150°C junction, parallel-switching capability, and Eoff optimization specifically for IC = 3A in hard- and soft-switching topologies.

Technical Context

This IGBT employs Infineon's 2nd-generation HighSpeed technology, featuring an integrated Emitter Controlled HE diode with soft, fast recovery (trr = 42ns @ 25°C, 125ns @ 150°C) and low Qrr (0.23µC typ). Its gate charge is 22nC, with Ci_ss = 205pF and Cr_ss = 7pF - enabling precise control of dv/dt and reduced EMI in high-frequency resonant circuits.

The device supports stable operation across -40°C to +150°C junction range, with thermal resistance RthJC = 2.0K/W (IGBT) and RthJC_D = 3.2K/W (diode), and maintains consistent VGE(th) (2.1–3.9V) and VCE(sat) (2.2–2.8V) over temperature - critical for predictable loss calculation in ZVS and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200V maximum blocking voltage - supports primary-side switching in 800V DC-link SMPS and industrial AC-DC converters
I_C	3A continuous collector current at T_C=100°C - enables compact heatsink design in space-constrained 1–2kW power stages
E_off	0.15mJ @ T_j=25°C - reduces switching losses by ~35% vs. prior-gen 1200V IGBTs in 100–140kHz ZVS applications
V_CE(sat)	2.2V @ I_C=3A, T_j=25°C - limits conduction loss to <6.6W at rated current, easing thermal management
t_rr	42ns diode reverse recovery time @ T_j
R_thJC	2.0K/W junction-to-case thermal resistance - allows direct mounting to heatsinks without thermal interface material degradation concerns
Q_g	22nC total gate charge - enables robust drive with standard 1–2A gate drivers while maintaining <300ns total switching times

Pinout & Package

IKW03N120H is housed in PG-TO-247-3 package - a through-hole, isolated-tab power package with 3 terminals, rated for >2.5kV isolation and 10s soldering at 260°C per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-voltage power output node	Connected to DC-link or transformer primary; handles full 1200V blocking and 3A conduction with minimal saturation voltage
Gate (G)	Control input for IGBT channel	Requires ±20V-rated drive; 22nC charge demands low-impedance path to minimize switching delay and EMI
Emitter (E)	Power return and reference node for gate drive	Serves as common source for IGBT and anti-parallel diode; must be low-inductance (<13nH internal LE) to suppress voltage spikes during diode recovery

Key Features

Feature	Design Value
Integrated Emitter Controlled HE diode	Soft, fast recovery (trr = 42ns @ 25°C) eliminates need for external ultrafast diode and reduces layout parasitics
2nd-gen HighSpeed technology	Tight parameter distribution (±5% VCE(sat), ±8% Eoff) enables reliable parallel operation without current-sharing resistors
ZVS-optimized Eoff	0.05mJ turn-off energy in zero-voltage-switching mode (C_r=4nF) - directly lowers losses in LLC and phase-shifted topologies
JEDEC2-qualified	Validated for SMPS, lamp ballast, and ZVS-converter reliability under real-world thermal cycling and surge conditions
Pb-free & RoHS-compliant	Lead-free plating meets global environmental compliance without derating or solderability compromise

Applications

Lamp Ballast

SMPS Primary Switch

Use Scenario: Electronic ballast for HID lamps operating at 20–100kHz with resonant ignition and regulated lamp power.

IC Role / Device Role / Timing Role: IGBT acts as half-bridge switch controlling resonant tank frequency and amplitude; integrated diode handles commutation during zero-crossing.

Use Value: Soft-recovery diode prevents voltage overshoot during lamp ignition, extending lamp life and reducing EMI filter size by 30%.

Use Scenario: 1.5kW telecom rectifier with active PFC followed by phase-shifted full-bridge DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switching device in ZVS full-bridge; operates at 100kHz with 300ns dead-time and controlled dv/dt.

Use Value: 0.15mJ Eoff and 2.2V VCE(sat) reduce total losses by 18% vs. legacy 1200V IGBTs, enabling 95.2% peak efficiency.

ZVS Resonant Converter

Industrial Induction Heater

Use Scenario: 2kW LLC resonant converter powering server PSUs, requiring soft switching across full load range.

IC Role / Device Role / Timing Role: Main switching element synchronized to resonant frequency; leverages low Cr_ss (7pF) for precise timing control.

Use Value: 0.05mJ ZVS-specific Eoff cuts light-load losses by 40%, improving efficiency below 20% load.

Use Scenario: Medium-frequency (20–50kHz) induction heating in metal hardening systems with variable load impedance.

IC Role / Device Role / Timing Role: Inverter bridge switch handling 1200V DC-link and 3A RMS current; withstands repetitive 150°C junction excursions.

Use Value: Temperature-stable VCE(sat) and RthJC = 2.0K/W ensure consistent output power and thermal margin across ambient shifts from -25°C to +70°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKP03N120H2	Same die, PG-TO-220-3-1 package; higher RthJC (2.5K/W) and lower Ptot (50W vs. 62.5W)	Lower power density; unsuitable for >1.2kW continuous operation without forced air	Select when board space is constrained and thermal mass is sufficient for lower-power SMPS or ballasts
STGP3HF120	1200V/3A IGBT with separate diode; 0.21mJ Eoff, 2.7V VCE(sat), no integrated diode	Requires external ultrafast diode and careful layout to match soft-recovery performance	Choose only if existing design uses discrete diode placement and gate drive can accommodate higher Qg (28nC)

Compared with IKP03N120H2 and STGP3HF120, IKW03N120H offers superior thermal performance (2.0K/W), lowest Eoff in its class, and monolithic integration that eliminates diode matching uncertainty - making it optimal for high-efficiency, high-reliability ZVS systems where layout simplicity and loss predictability are critical.

Availability

IKW03N120H is available at Aetrix Electronics and suitable for lamp ballasts, ZVS resonant converters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKW03N120H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in automotive, industrial, and renewable energy markets.

This device belongs to Infineon's HighSpeed IGBT portfolio, engineered specifically for high-frequency resonant and soft-switching power conversion - prioritizing low Eoff, tight parameter spread, and integrated diode performance in 1200V systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 140kHz?

For 140kHz operation with minimal overshoot and EMI, the recommended gate resistor is 82Ω - validated in Infineon's dynamic test circuit (Fig. E) with Lσ = 180nH and Cσ = 40pF. Using >100Ω increases td(off) beyond 340ns at 150°C, risking shoot-through in bridge configurations.

Can IKW03N120H be paralleled without external emitter resistors?

Yes - its 2nd-gen HighSpeed process ensures tight parameter distribution (±5% VCE(sat), ±8% Eoff), enabling stable current sharing at 3A per device without emitter resistors. Parallel operation requires matched gate drive paths and symmetrical PCB layout to keep ΔLE <2nH between devices.

Does the integrated diode support bidirectional current in synchronous rectification?

No - the anti-parallel Emitter Controlled HE diode is unidirectional and optimized for commutation, not synchronous rectification. It conducts only from emitter to collector during freewheeling; it cannot be actively controlled like a MOSFET and lacks body-diode-like reverse conduction capability.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the DC SOA is limited to 3.9A at VCE ≤ 1200V (per datasheet Table "Maximum Ratings"). For pulsed operation (tp < 10ms), peak current reaches 9.9A, but must stay within the bounded curve in Figure 2 - exceeding this risks secondary breakdown due to localized thermal runaway in the IGBT cell structure.

IKW03N120H Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 9.6 A

Current - Collector Pulsed (Icm):: 9.9 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 62.5 W

Switching Energy:: 140µJ (on), 150µJ (off)

Input Type:: Standard

Gate Charge:: 22 nC

Td (on/off) @ 25°C:: 9.2ns/281ns

Test Condition:: 800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-21

IKW03N120H FAQ

1.How can I place an order for IKW03N120H through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW03N120H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW03N120H reliable?

The price and inventory of IKW03N120H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW03N120H is usually 5 days.

3.What payment methods are accepted for IKW03N120H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW03N120H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW03N120H?

IKW03N120H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW03N120H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW03N120H?

For technical support, including IKW03N120H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW03N120H requirements.

6.How does Aetrix verify that IKW03N120H is sourced from the original manufacturer or authorized distributors?

All IKW03N120H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW03N120H meets industry standards.

7.What is the process for return or replacement of IKW03N120H?

All IKW03N120H units undergo pre-shipment inspection (PSI). If there is an issue with IKW03N120H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW03N120H part is unused and in its original packaging.

Return procedure for IKW03N120H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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