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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW03N120H2FKSA1

Name: IKW03N120H2FKSA1
Brand: Infineon Technologies
SKU: IKW03N120H2FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW03N120H2FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW03N120H2FKSA1.pdf

Description:: IGBT 1200V 9.6A 62.5W TO247-3

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Product details

Overview

IKW03N120H2FKSA1 from Infineon is a 1200V, 3A high-speed IGBT with integrated emitter-controlled HE diode in PG-TO-247-3 package. It delivers 0.15mJ turn-off energy at Tj=25°C, 2.2V VCE(sat) at 3A/25°C, and 42ns trr for soft-switching resonant converters. Designed for SMPS, lamp ballasts, and ZVS-converters requiring low-loss, temperature-stable switching.

For engineers reviewing the IKW03N120H2FKSA1 datasheet, IKW03N120H2FKSA1 pinout, IKW03N120H2FKSA1 application, or IKW03N120H2FKSA1 equivalent, key selection criteria include Eoff optimization at IC=3A, tight parameter distribution across temperature, parallel switching capability, and JEDEC2 qualification for industrial power conversion.

Technical Context

This 2nd-generation HighSpeed IGBT uses emitter-controlled technology to achieve soft, fast recovery in its anti-parallel diode-critical for minimizing voltage overshoot and EMI in resonant topologies. Its optimized Eoff (0.15mJ @25°C, 0.26mJ @150°C) and low Crss (7pF) support stable ZVS operation up to 140kHz.

The device features temperature-stable VGE(th) (2.1–3.9V), low thermal resistance (RthJC = 2.0K/W), and robust SOA up to 9.9A pulsed current. Gate charge is 22nC, enabling efficient drive with standard gate drivers while maintaining tight dynamic parameter spread across production lots.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200V - supports DC-link voltages up to 800V in ZVS converters with margin
I_C	3A continuous - rated for sustained conduction in 1–3kW SMPS and ballast designs
E_off	0.15mJ @25°C - enables low-loss turn-off in high-frequency resonant circuits
V_CE(sat)	2.2V @3A/25°C - reduces conduction loss and thermal stress vs. earlier H1/H1A generations
t_rr	42ns @25°C - ensures soft diode recovery with minimal reverse recovery current (I_rrm = 10.3A)
R_thJC	2.0K/W - allows 62.5W power dissipation at TC=25°C with manageable junction rise
Q_g	22nC - compatible with standard ±15V gate drivers without excessive drive power

Pinout & Package

PG-TO-247-3 package with isolated tab (collector-connected), standard through-hole mounting, and 2.0K/W junction-to-case thermal resistance. Pin assignment verified per Infineon datasheet Rev. 2.6.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to heatsink tab; carries full load current and withstands 1200V blocking
Gate (G)	Control input	High-impedance MOS-driven terminal requiring ≤±20V; 22nC total charge dictates driver sizing
Emiter (E)	Power return and reference	Common node for IGBT emitter and anti-parallel diode cathode; defines ground-referenced control loop

Key Features

Feature	Design Value
Emitter-Controlled HE Diode	Soft, fast recovery (trr = 42ns) minimizes voltage spikes and EMI in hard- and soft-switching topologies
Temperature-Stable Switching	Eoff increases only 73% from 25°C to 150°C (0.15 → 0.26mJ), enabling predictable thermal design
Parallel-Switching Capability	Tight parameter distribution (VGE(th), Eoff, VCE(sat)) allows direct paralleling without current-sharing resistors
ZVS-Optimized Eoff	0.05mJ Eoff under ZVT conditions (Cr = 4nF) confirms suitability for zero-voltage transition circuits

Applications

Industrial SMPS

Lamp Ballast

Use Scenario: 2–5kW telecom/server PSUs operating at 50–140kHz with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Main switch in primary-side ZVS inverter; handles 800V DC-link with <10A peak current.

Use Value: Low Eoff and soft diode recovery reduce snubber losses and improve efficiency by ≥0.8% at full load vs. H1 generation.

Use Scenario: Electronic HID lamp ballasts driving 70–250W metal halide lamps with resonant ignition.

IC Role / Device Role / Timing Role: Half-bridge switch controlling lamp power and ignition pulses; operates in burst-mode and resonant modes.

Use Value: Tight VCE(sat) distribution ensures balanced current sharing in dual-switch configurations, extending lamp life.

ZVS DC-DC Converter

Induction Heating Inverter

Use Scenario: 3.3kW isolated bi-directional DC-DC converter for EV charging systems using LLC topology.

IC Role / Device Role / Timing Role: Primary-side switch managing 100kHz resonant transitions with zero-voltage turn-on and controlled tail current.

Use Value: Optimized Eoff (0.15mJ) and low Crss (7pF) enable reliable ZVS across 20–100% load range without auxiliary circuits.

Use Scenario: 2.5kW medium-frequency induction heater (20–50kHz) for metal hardening and brazing.

IC Role / Device Role / Timing Role: Full-bridge inverter switch handling repetitive 10A surge currents and 1200V blocking during fault transients.

Use Value: JEDEC2 qualification and 150°C Tj rating ensure reliability under sustained thermal cycling and overcurrent events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKP03N120H2	Same die, PG-TO-220-3-1 package; RthJC = 3.2K/W (diode), higher thermal resistance	Limited to lower-power (<1.5kW) or forced-air-cooled designs due to reduced thermal performance	Select when board space constraints prohibit TO-247 and power level permits higher case temperature rise
IKW10N120CS6	1200V/10A, 650V-class gate drive (±20V), 0.29mJ Eoff @25°C, co-packaged diode	Higher current rating suits 5–10kW ZVS inverters but requires larger gate drive and heatsinking	Choose for scalable designs needing headroom beyond 3A or where future power-upgrades are planned

Compared with IKP03N120H2 and IKW10N120CS6, IKW03N120H2FKSA1 offers the optimal balance of low Eoff, TO-247 thermal performance, and compact 3A rating-ideal for cost- and size-sensitive 2–4kW resonant converters where thermal margin and switching loss are critical.

Availability

IKW03N120H2FKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, lamp ballasts, ZVS-converters, and induction heating inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for IKW03N120H2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The HighSpeed 2 IGBT product line targets high-efficiency, high-frequency power conversion-specifically engineered for resonant, soft-switching topologies in industrial, lighting, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor for reliable switching?

The datasheet specifies RG = 82Ω for characterization at 3A/800V. For safe operation, RG must limit peak gate current below 2A and ensure td(off) ≤340ns at 150°C. Typical design range is 47–100Ω; values below 33Ω risk shoot-through in bridge configurations without added desaturation protection.

Is the anti-parallel diode suitable for freewheeling in hard-switched PFC stages?

No-the HE diode is optimized for soft recovery in resonant circuits, not hard-commutated PFC. Its Qrr (0.23µC @25°C) and di/dt capability (993A/µs) are insufficient for 30–100kHz boost PFC; discrete ultrafast diodes with lower Qrr are recommended for that application.

Does IKW03N120H2FKSA1 support paralleling without external emitter resistors?

Yes-Infineon confirms parallel operation without emitter resistors due to tight VGE(th) (2.1–3.9V) and Eoff distribution. Layout symmetry and matched gate drive paths are mandatory; derating to 2.5A per device is advised for >2-device arrays above 100°C case temperature.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the maximum DC collector current is 3.9A (per Fig.4), and the pulsed SOA limits IC to 9.9A for tp ≤10µs (per max ratings table). Operation above 3.9A DC requires active cooling or derating to maintain Tj ≤150°C given RthJC = 2.0K/W.

IKW03N120H2FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 9.6 A

Current - Collector Pulsed (Icm):: 9.9 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 62.5 W

Switching Energy:: 290µJ

Input Type:: Standard

Gate Charge:: 22 nC

Td (on/off) @ 25°C:: 9.2ns/281ns

Test Condition:: 800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW03N120H2FKSA1 FAQ

1.How can I place an order for IKW03N120H2FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW03N120H2FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW03N120H2FKSA1 reliable?

The price and inventory of IKW03N120H2FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW03N120H2FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW03N120H2FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW03N120H2FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW03N120H2FKSA1?

IKW03N120H2FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW03N120H2FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW03N120H2FKSA1?

For technical support, including IKW03N120H2FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW03N120H2FKSA1 requirements.

6.How does Aetrix verify that IKW03N120H2FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW03N120H2FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW03N120H2FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW03N120H2FKSA1?

All IKW03N120H2FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW03N120H2FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW03N120H2FKSA1 part is unused and in its original packaging.

Return procedure for IKW03N120H2FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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