Infineon Technologies IKW08N120CS7XKSA1

Overview

IKW08N120CS7XKSA1 from Infineon is a 1200 V, 8 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3 package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, t_SC = 8 µs, and optimized dv/dt controllability for hard-switching inverters. Used in solar inverters and industrial drives where high blocking voltage and thermal robustness are critical.

For engineers reviewing the IKW08N120CS7XKSA1 datasheet, IKW08N120CS7XKSA1 pinout, IKW08N120CS7XKSA1 application, or IKW08N120CS7XKSA1 equivalent, key selection criteria include short-circuit withstand time, junction-to-case thermal resistance (R_th(jc) = 1.05–1.42 K/W), diode Q_rr (0.45–1.10 µC), and gate charge (Q_G = 52 nC) under 960 V bus conditions.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop structure and optimized carrier lifetime control to achieve low conduction loss while maintaining 8 µs short-circuit ruggedness at 150 °C junction temperature. Its co-packaged diode features soft reverse recovery (t_rr = 130–210 ns) and low peak reverse recovery current (I_rrm = 9–13 A).

The device targets 2-level inverters and 3-level NPC/T-type topologies operating up to 175 °C junction temperature. Gate drive requirements include ±20 V rating and 52 nC total gate charge, with turn-off energy rising from 0.40 mJ (25 °C) to 0.86 mJ (175 °C) under 600 V, 8 A inductive switching.

Key Specifications

Pinout & Package

Package: PG-TO247-3 - Standard 3-pin through-hole outline with isolated mounting hole, rated for 150 °C ambient operation and 260 °C wave soldering (10 s at 1.6 mm from case). Mounting torque: 0.6 N·m (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Compared with IKW20N120CS7 and IGW25N120H3, IKW08N120CS7XKSA1 offers optimal balance of compact footprint, integrated diode functionality, and verified 8 µs short-circuit ruggedness-making it preferred for space-constrained 10–20 kW industrial inverters where thermal management is passive or limited.

Availability

IKW08N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IKW08N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW08N120CS7XKSA1 belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in solar inverters, industrial drives, and UPS systems operating up to 175 °C junction temperature.

FAQ

What is the maximum allowable gate-emitter voltage for IKW08N120CS7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±25 V for pulses ≤0.5 µs and duty cycle <0.001. Exceeding ±20 V continuously risks permanent gate oxide damage. Recommended gate drive uses +15 V turn-on and –5 V to –10 V turn-off to ensure robust noise immunity and fast fall time.

Does IKW08N120CS7XKSA1 include an integrated diode, and what are its key parameters?

Yes, it integrates a full-current Emitter Controlled 7 (EC7) diode rated for 1200 V V_RRM and 18 A I_F at T_C = 25 °C. Key diode specs include V_F = 1.65–2.15 V (25–175 °C), t_rr = 130–210 ns, Q_rr = 0.45–1.10 µC, and R_th(jc) = 1.80–2.40 K/W - enabling efficient freewheeling without external diodes in inverter legs.

Can IKW08N120CS7XKSA1 be used in 3-level neutral-point-clamped (3L-NPC) inverters?

Yes, it is explicitly optimized for 3L-NPC and T-type topologies per Infineon documentation. Its wide dv/dt controllability, soft diode recovery, and 1200 V blocking capability allow reliable operation in mid-point clamping configurations with 600–800 V DC-link segments and reduced voltage stress on individual devices.

What is the thermal resistance from junction to case, and how does it impact heatsink selection?

R_th(jc) is specified as 1.05 K/W (typical) and 1.42 K/W (max) for the IGBT portion. At 8 A and V_CE(sat) = 2.0 V, conduction loss is ~16 W; with typical switching losses (~0.77 mJ × 10 kHz = 7.7 W), total dissipation ≈24 W. Using R_th(jc) = 1.42 K/W, a 20 K/W heatsink is required to hold T_j ≤175 °C at T_C = 100 °C.