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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW15N120BH6XKSA1

Name: IKW15N120BH6XKSA1
Brand: Infineon Technologies
SKU: IKW15N120BH6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW15N120BH6XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW15N120BH6XKSA1.pdf

Description:: IGBT 1200 V 15A TO247-3-46

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Product details

Overview

IKW15N120BH6XKSA1 from Infineon is a 1200 V, 15 A TRENCHSTOP™ IGBT6 with integrated soft-recovery anti-parallel diode in PG-TO247-3 package, designed for high-efficiency hard-switching and resonant topologies in industrial power conversion. It delivers 1.9 V V_CE(sat) at 25°C, 175°C max junction temperature, and 92 nC total gate charge, enabling low conduction and switching losses in UPS, solar inverters, and welding equipment.

For engineers reviewing the IKW15N120BH6XKSA1 datasheet, IKW15N120BH6XKSA1 pinout, IKW15N120BH6XKSA1 application, or IKW15N120BH6XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, 3 µs short-circuit withstand time, and 340 ns diode reverse recovery time at 25°C - critical for EMI-sensitive, high-reliability industrial systems.

Technical Context

This sixth-generation TRENCHSTOP IGBT employs trench-gate and field-stop architecture to achieve low switching energy (E_on = 0.70 mJ, E_off = 0.55 mJ at 25°C) while maintaining soft turn-off behavior and minimal tail current. Its co-packed diode exhibits 0.83 µC Q_rr and 8.3 A I_rrm, reducing voltage overshoot during commutation.

The device operates across –40°C to +175°C junction range with 0.74 K/W R_th(j–c) (IGBT) and 2.40 K/W R_th(j–c) (diode), supporting high-power density thermal design. Gate threshold voltage (5.1–6.3 V) and transconductance (10.0 S typical) ensure robust drive margin and linear current control under varying temperature conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 1000 V in three-level solar string inverters and industrial UPS systems.
I_C	15 A continuous @ T_c = 100°C - enables compact heatsink sizing in forced-air-cooled 5–10 kW power stages.
V_CE(sat)	1.90 V @ I_C = 15 A, T_vj = 25°C - reduces conduction loss to ~28.5 W at full load, improving system efficiency.
Q_G	92 nC - allows use of standard 15 V gate drivers with moderate RG values (e.g., 22 Ω) without excessive drive power.
t_SC	3 µs @ V_GE = 15 V, V_CC ≤ 500 V - provides deterministic short-circuit protection window for gate driver fault response.
trr / Q_rr	340 ns / 0.83 µC @ T_vj = 25°C - minimizes diode-induced voltage spikes and EMI in bidirectional switching applications.
R_th(j–c) (IGBT)	0.74 K/W - enables direct mounting to heatsinks with predictable thermal resistance for junction temperature estimation.

Pinout & Package

PG-TO247-3 package: isolated metal tab (collector), 3-pin through-hole outline with 2.54 mm lead pitch; collector terminal electrically connected to case for low-inductance power path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	IGBT emitter terminal	Reference node for gate drive and current sensing; connects to low-side shunt or source of downstream MOSFETs.
Pin 2 (Gate)	IGBT gate control input	High-impedance MOS-controlled terminal requiring <600 nA leakage current compliance and ±20 V transient rating.
Pin 3 (Collector)	IGBT collector / diode cathode	High-voltage power output node; electrically tied to metal tab for thermal and electrical integration with heatsink.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing in parallel configurations without external current-balancing resistors.
Soft fast-recovery diode	340 ns trr and low dirr/dt (–55 A/µs) suppress voltage overshoot and reduce snubber requirements.
175°C maximum junction temperature	Supports operation in high-ambient environments (e.g., enclosed industrial cabinets) without derating penalties.
Pb-free RoHS-compliant plating	Meets EU Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level (MSL) 1 handling requirements.
Low EMI signature	Controlled dV/dt and di/dt during switching minimize conducted noise, easing EMC filter design in Class A/B systems.

Applications

Industrial UPS

Three-Level Solar String Inverter

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Main inverter switch in IGBT-based H-bridge stage, operating at 8–16 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft diode recovery reduce thermal stress and improve efficiency >96% at full load.

Use Scenario: Medium-voltage DC–AC conversion in rooftop solar arrays using NPC or T-type topologies.

IC Role / Device Role / Timing Role: High-side and low-side switching element in phase-leg modules, handling 1000 V DC link.

Use Value: 1200 V rating and 175°C operation allow simplified topology with reduced component count and higher power density.

Energy Storage System (ESS) Bi-Directional Converter

Industrial Welding Power Supply

Use Scenario: Grid-tied battery storage system performing charge/discharge via dual-active-bridge or buck-boost converters.

IC Role / Device Role / Timing Role: Primary switching device in interleaved DC–DC stage, conducting bidirectional current with synchronous rectification.

Use Value: Co-packed diode eliminates need for discrete anti-parallel diodes, reducing layout area and parasitic inductance.

Use Scenario: Inverter-based arc welding equipment requiring rapid current slew rates and precise droop control.

IC Role / Device Role / Timing Role: Output stage switch modulating 20–100 kHz carrier to regulate weld current waveform shape and stability.

Use Value: 3 µs short-circuit rating and low gate charge enable fast overcurrent shutdown and responsive current-loop bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP15H120DF	1200 V, 15 A; V_CE(sat) = 2.1 V @ 25°C; Q_G = 105 nC; no integrated diode - requires external ultrafast diode.	Lacks co-packaged diode, increasing layout complexity and reverse recovery mismatch risk in hard-switched designs.	Prefer when discrete diode selection is required for custom recovery tuning or cost-driven BOM optimization.
IXYS IXGN150N120B3	1200 V, 150 A rated (but 15 A typical use); V_CE(sat) = 2.4 V @ 25°C; Q_G = 220 nC; TO-247 package with insulated tab.	Higher current rating increases thermal mass and gate drive demand; not drop-in compatible due to different pinout and thermal interface.	Consider only for high-current parallel configurations where Infineon's 15 A rating is insufficient.

Compared with STGP15H120DF and IXGN150N120B3, IKW15N120BH6XKSA1 offers lower conduction loss, integrated soft diode, and optimized gate charge for medium-power industrial converters - making it the preferred choice for space-constrained, EMI-sensitive, and thermally demanding applications.

Availability

IKW15N120BH6XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and energy storage systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified distributors.

Supply support for IKW15N120BH6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW15N120BH6XKSA1 belongs to the TRENCHSTOP™ IGBT6 family, engineered specifically for high-efficiency, high-reliability industrial power conversion - emphasizing soft switching, paralleling capability, and extended temperature operation.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 22 Ω for characterization at 15 V gate drive. For safe operation, RG should not exceed 47 Ω to maintain adequate dV/dt control and avoid shoot-through risk in bridge configurations. Higher values increase switching time and energy loss, especially at elevated junction temperatures.

Can IKW15N120BH6XKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient ensures inherent current balancing across multiple devices. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (±5% tolerance) to minimize dynamic imbalance during switching transitions.

Is the anti-parallel diode suitable for freewheeling in boost PFC stages?

Yes - the diode's 340 ns trr and low Q_rr (0.83 µC) at 25°C make it suitable for continuous conduction mode (CCM) boost PFC up to 100 kHz. At 175°C, trr increases to 540 ns and Q_rr to 1.75 µC, requiring verification of voltage overshoot margins under worst-case thermal conditions.

What is the thermal resistance from junction to case for the integrated diode?

The diode's junction-to-case thermal resistance is 2.40 K/W, measured under specified test conditions. This value applies when heat flows from the diode die through the shared TO247 metal tab - critical for calculating diode junction temperature rise in bidirectional current applications.

IKW15N120BH6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 15A

Power - Max:: 200 W

Switching Energy:: 700µJ (on), 550µJ (off)

Input Type:: Standard

Gate Charge:: 92 nC

Td (on/off) @ 25°C:: 18ns/240ns

Test Condition:: 600V, 15A, 22Ohm, 15V

Reverse Recovery Time (trr):: 340 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IKW15N120BH6XKSA1 FAQ

1.How can I place an order for IKW15N120BH6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW15N120BH6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW15N120BH6XKSA1 reliable?

The price and inventory of IKW15N120BH6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW15N120BH6XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW15N120BH6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW15N120BH6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW15N120BH6XKSA1?

IKW15N120BH6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW15N120BH6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW15N120BH6XKSA1?

For technical support, including IKW15N120BH6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW15N120BH6XKSA1 requirements.

6.How does Aetrix verify that IKW15N120BH6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW15N120BH6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW15N120BH6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW15N120BH6XKSA1?

All IKW15N120BH6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW15N120BH6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW15N120BH6XKSA1 part is unused and in its original packaging.

Return procedure for IKW15N120BH6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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