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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW15N120CS7XKSA1

Name: IKW15N120CS7XKSA1
Brand: Infineon Technologies
SKU: IKW15N120CS7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW15N120CS7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW15N120CS7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 36A TO247-3

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Product details

Overview

IKW15N120CS7XKSA1 from Infineon is a 1200 V, 15 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3 package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, t_SC = 8 µs, and optimized dv/dt controllability for hard-switching industrial inverters and solar power conversion stages.

For engineers reviewing the IKW15N120CS7XKSA1 datasheet, IKW15N120CS7XKSA1 pinout, IKW15N120CS7XKSA1 application, or IKW15N120CS7XKSA1 equivalent, key selection criteria include short-circuit robustness, high-temperature saturation voltage stability, co-packaged diode Q_rr and trr performance, and thermal resistance (R_thjc = 0.65–0.85 K/W for IGBT, 1.10–1.50 K/W for diode).

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT cell architecture with field-stop design and enhanced carrier lifetime control, enabling low conduction loss while maintaining 8 µs short-circuit withstand capability at 150 °C junction temperature. Its gate threshold voltage (V_GE(th) = 5.15–6.45 V) and transconductance (g_fs = 6.5 S at 175 °C) are tuned for stable turn-on behavior under high-temperature operation.

The integrated Emitter Controlled 7 diode features soft reverse recovery (trr = 135 ns typ. at 25 °C), low Q_rr (0.87 µC typ.), and controlled dI_rr/dt (−140 A/µs typ.), minimizing voltage overshoot and EMI in NPC and T-type three-level topologies where commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 1000 V in 3L-NPC solar inverters with margin
I_C (rated)	15 A - continuous current rating at T_C = 100 °C, suitable for 10–15 kW industrial drive modules
V_CE(sat)	2.0 V at T_vj = 175 °C - enables low conduction loss and reduced heatsink requirements at full thermal load
t_SC	8 µs - provides deterministic fault handling without external desaturation circuitry in motor drives
Q_G	95 nC - defines gate driver strength requirement (e.g., ≥2 A peak for 10 Ω RG on/off)
R_thjc (IGBT)	0.65–0.85 K/W - enables direct mounting to heatsinks with predictable thermal drop in forced-air systems
trr / Q_rr	135 ns / 0.87 µC at 25 °C - reduces switching loss and voltage spikes during diode commutation

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, 3-pin configuration). Pin assignment verified per Infineon datasheet revision 1.00 (2021-03-17).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ rail in 2L inverter leg; electrically tied to metal tab for thermal conduction
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal requiring <100 nA leakage; sensitive to ESD and ringing
Emiter (E)	Common emitter node for IGBT and diode	Reference point for gate drive; carries both IGBT and diode return current-requires low-inductance layout

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand time at V_CC ≤ 600 V, V_GE = 15 V, T_vj = 150 °C - eliminates need for fast desat detection in cost-sensitive drives
Co-packed EC7 diode	Full-rated 15 A soft-recovery diode with Q_rr = 0.87 µC (25 °C) - reduces snubber losses and improves reliability in bidirectional switching
High-temperature V_CE(sat)	2.0 V at T_vj = 175 °C - maintains efficiency and thermal stability in sealed industrial enclosures
dv/dt controllability	Wide operating range confirmed across 10–100 V/ns - supports stable operation in high-noise factory environments without false triggering
Thermal resistance	R_thjc = 0.65 K/W (min) for IGBT - allows >10 W dissipation per °C rise from case to junction in compact heatsink designs

Applications

Industrial Motor Drives

Solar String Inverters

Use Scenario: 3-phase 10–20 kW variable-frequency drives for pumps, fans, and conveyors operating in ambient temperatures up to 60 °C.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter half-bridge legs, handling PWM switching at 4–16 kHz with overcurrent and short-circuit protection.

Use Value: 8 µs short-circuit ruggedness enables simplified protection schemes; low V_CE(sat) reduces conduction loss by ~12% vs. prior-gen IGBTs at 175 °C.

Use Scenario: DC–AC stage of string inverters converting 600–1000 V PV array output into grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: High-voltage switch in NPC or T-type 3-level topologies, managing hard-switched transitions with minimal voltage overshoot.

Use Value: Soft-recovery EC7 diode cuts E_rec by 40% vs. standard FRD, lowering system-level EMI filter size and cost.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS units delivering clean 50/60 Hz sine wave output with <5 ms transfer time during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch in high-efficiency 3L-T-type topology, operating at 12–20 kHz with tight dead-time control.

Use Value: Stable dv/dt behavior ensures reliable zero-crossing detection and prevents shoot-through during dynamic load steps.

Use Scenario: Medium-frequency (20–50 kHz) resonant inverters powering domestic and commercial induction cooktops and heating coils.

IC Role / Device Role / Timing Role: Half-bridge switch managing ZVS/ZCS transitions; diode handles reverse recovery during resonant ring-down.

Use Value: Low Q_rr and controlled dI_rr/dt minimize capacitive losses and thermal stress on the diode during high-dI/dt commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW20N120CS7	Higher rated I_C = 20 A, same V_CE, V_CE(sat), and t_SC; larger die area increases R_thjc to 0.55 K/W	Better suited for 15–25 kW designs with higher thermal margin; requires larger PCB copper pour	Select when system derating demands >15 A continuous current or lower junction temperature rise is critical
FF150R12ME4	1200 V, 150 A hybrid module with separate IGBT/diode dies; includes NTC thermistor and press-fit terminals	Targeted at high-power traction and grid-tie inverters; not pin-compatible; requires different gate drive layout	Choose only when scaling to >50 kW systems where module integration and thermal monitoring justify redesign

Compared with IKW20N120CS7 and FF150R12ME4, IKW15N120CS7XKSA1 offers optimal balance of current rating, thermal performance, and board-level integration for mid-power industrial inverters-delivering proven ruggedness without over-specifying die size or packaging complexity.

Availability

IKW15N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production line.

Supply support for IKW15N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities.

This part belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial energy conversion-including drives, UPS, and renewable power systems-where short-circuit robustness and thermal stability are non-negotiable.

FAQ

What is the maximum allowable gate-emitter voltage for IKW15N120CS7XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient tolerance up to ±25 V for pulses ≤0.5 µs and duty cycle <0.1%. Exceeding ±20 V continuously risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., 18 V Zener) and low-inductance layout to prevent ringing-induced overvoltage.

Does IKW15N120CS7XKSA1 require an external freewheeling diode?

No. The device integrates a full-rated, soft-recovery Emitter Controlled 7 diode co-packed in the same TO-247-3 housing. This diode is rated for 15 A continuous forward current and handles all freewheeling and commutation functions without external components in standard inverter topologies.

How does the short-circuit withstand time change with junction temperature?

t_SC is specified at 8 µs under conditions of V_CC ≤ 600 V, V_GE = 15 V, and T_vj = 150 °C. At lower junction temperatures (e.g., 25 °C), t_SC remains 8 µs but energy dissipation capability increases; at 175 °C, the safe operating window narrows due to higher V_CE(sat) and reduced thermal margin-designs must respect the 150 °C test condition for guaranteed timing.

Can IKW15N120CS7XKSA1 be used in parallel configurations?

Yes, but only with strict layout symmetry and individual gate resistors (≤5 Ω) to ensure current sharing. The positive V_GE(th) temperature coefficient (5.15–6.45 V over −40 to 175 °C) supports inherent thermal balancing. However, parallel operation requires matched devices, identical thermal paths, and gate drive skew <5 ns to avoid dynamic imbalance.

IKW15N120CS7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 36 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 15A

Power - Max:: 176 W

Switching Energy:: 750µJ (on), 700µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 23ns/170ns

Test Condition:: 600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr):: 135 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW15N120CS7XKSA1 FAQ

1.How can I place an order for IKW15N120CS7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW15N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW15N120CS7XKSA1 reliable?

The price and inventory of IKW15N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW15N120CS7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW15N120CS7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW15N120CS7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW15N120CS7XKSA1?

IKW15N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW15N120CS7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW15N120CS7XKSA1?

For technical support, including IKW15N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW15N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKW15N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW15N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW15N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW15N120CS7XKSA1?

All IKW15N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW15N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW15N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKW15N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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