Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW15N120H3FKSA1

Name: IKW15N120H3FKSA1
Brand: Infineon Technologies
SKU: IKW15N120H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW15N120H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW15N120H3FKSA1.pdf

Description:: IGBT TRENCH FS 1200V 30A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:184

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW15N120H3FKSA1 from Infineon is a 1200 V, 15 A high-speed DuoPack IGBT with integrated soft fast-recovery antiparallel diode in Trench and Fieldstop technology. It delivers V_CE(sat) = 2.4 V (typ.) at 15 A/15 V_GE, t_rr = 260 ns (25°C), and T_vj(max) = 175°C - optimized for high-frequency switching in welding converters and UPS systems.

For engineers reviewing the IKW15N120H3FKSA1 datasheet, IKW15N120H3FKSA1 pinout, IKW15N120H3FKSA1 application, or IKW15N120H3FKSA1 equivalent, key selection criteria include low EMI profile, junction-temperature-rated pulsed current (60 A), soft reverse recovery behavior, and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This device integrates an IGBT and its companion diode in a single PG-TO247-3 package using Infineon's TrenchStop™ H3 process. The IGBT features low V_CE(sat) (2.4 V typ.) and fast switching (t_d(off) = 260 ns, t_f = 14 ns at 25°C), while the antiparallel diode provides soft, low-Q_rr (0.8 µC) recovery to minimize voltage overshoot and oscillation.

The DuoPack architecture eliminates parasitic inductance between IGBT and diode, enabling precise timing control in hard-switched topologies. Thermal design is supported by R_th(j-c) = 0.7 K/W (IGBT) and 2.12 K/W (diode), with mounting torque specified at 0.6 Nm for M3 screws.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 960 V in 600 V-class inverters with margin.
I_C (continuous)	15 A at T_c = 100°C - defines thermal-limited conduction rating for heatsink-cooled operation.
V_CE(sat)	2.4 V (typ., 15 A, 15 V_GE, 25°C) - directly determines conduction loss and junction temperature rise.
t_rr	260 ns (25°C, 15 A, -di_F/dt = 500 A/µs) - enables clean turn-off of inductive loads with minimal voltage spike.
R_th(j-c) (IGBT)	0.7 K/W - quantifies thermal path efficiency from die to case, critical for heatsink sizing.
Q_G	75 nC - determines gate driver current requirement and switching speed controllability.
T_vj(max)	175°C - allows sustained operation under overload or transient conditions without derating.

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated collector backside). Pin assignment verified per Infineon datasheet Rev. 1.20: Gate (G), Collector (C), Emitter (E); collector connected to metal tab/backside for low-inductance high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls IGBT turn-on/off; requires ±20 V absolute max gate-emitter voltage.
C	Collector terminal	Main high-side power input; electrically tied to metal backside for thermal and current path integrity.
E	Emitter terminal	Common reference for gate drive and load current return; separates control and power ground paths.

Key Features

Feature	Design Value
Very low V_CE(sat)	2.4 V typical at 15 A reduces conduction losses by ~18% vs. prior H2 generation, lowering heatsink requirements.
Soft, fast recovery antiparallel diode	t_rr = 260 ns with low Q_rr (0.8 µC) minimizes snubber stress and EMI in high-dV/dt environments.
JEDEC qualification	Validated for industrial target applications including welding and UPS - ensures long-term reliability under thermal cycling.
Pb-free & RoHS compliant	Meets global environmental compliance mandates without performance trade-offs in high-temperature operation.
PSpice models available	Verified simulation models enable accurate loss estimation and gate drive design before hardware prototyping.

Applications

Welding Converters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-frequency inverter stage in IGBT-based arc welding equipment operating at 15–50 kHz with 100% duty cycle bursts.

IC Role / Device Role / Timing Role: Main switching device in half-bridge output stage; handles 15 A RMS load current with <10 µs short-circuit withstand capability.

Use Value: Soft diode recovery prevents voltage overshoot during rapid polarity reversal, ensuring stable arc ignition and reduced EMI filter cost.

Use Scenario: Online double-conversion UPS with bidirectional inverter/rectifier stages requiring 1200 V blocking and 15 A continuous conduction.

IC Role / Device Role / Timing Role: Inverter-side switch in three-phase bridge; operates with 260 ns t_rr to maintain zero-voltage switching margins under varying load dynamics.

Use Value: 175°C T_vj(max) enables compact thermal design in space-constrained rack-mount units without forced-air derating.

Solar Central Inverters

Induction Heating Systems

Use Scenario: DC-link switching stage in multi-level solar central inverters handling 1000 V DC input and delivering grid-synchronized AC output.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type topology; rated for 1200 V V_CE with 60 A pulsed current capability for transient overloads.

Use Value: Low EMI signature reduces need for external common-mode chokes, simplifying EMI certification for Class A industrial installations.

Use Scenario: Resonant inverter stage in medium-frequency induction heating (20–100 kHz) driving series-resonant tank circuits.

IC Role / Device Role / Timing Role: Hard-switched main switch with precise timing control; leverages 35 Ω gate resistance compatibility for predictable dV/dt control.

Use Value: 0.7 K/W R_th(j-c) enables direct mounting to copper baseplates, supporting >95% efficiency at 15 kW output levels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW20N120H3	Higher I_C rating (20 A), identical V_CE, V_CE(sat), and t_rr; larger chip area increases R_th(j-c) to 0.55 K/W.	Better suited for higher continuous current designs (>15 A) where thermal headroom is constrained.	Select when system peak current exceeds 15 A but same 1200 V blocking and soft-diode behavior are required.
IKW15N120CS6	Same V_CE/I_C, but uses newer C6 silicon with lower Q_G (58 nC vs. 75 nC) and faster t_d(off) (190 ns), no JEDEC qualification.	Targeted at cost-sensitive consumer-grade inverters where full industrial qualification is not mandated.	Choose for higher switching frequency (>100 kHz) designs where gate drive loss reduction outweighs qualification needs.

Compared with IKW20N120H3 and IKW15N120CS6, the IKW15N120H3FKSA1 balances JEDEC reliability, proven soft-diode performance, and thermal efficiency - making it optimal for mission-critical industrial welders and UPS where field failure risk must be minimized.

Availability

IKW15N120H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, and solar central inverters requiring stable component supply, long lifecycle support, and traceable industrial-grade sourcing.

Supply support for IKW15N120H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The TrenchStop™ H3 IGBT product line targets high-efficiency, high-reliability industrial power conversion - specifically engineered for welding, UPS, and renewable energy inverters demanding robust short-circuit ruggedness and soft switching behavior.

FAQ

What is the maximum allowable gate-emitter voltage for IKW15N120H3FKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient tolerance up to ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V / –5 V to ensure reliable turn-on and fast, controlled turn-off without Miller-induced false triggering.

Does IKW15N120H3FKSA1 require a negative gate voltage for safe operation?

A negative gate voltage (–5 V typical) is strongly recommended during off-state to prevent spurious turn-on from dv/dt coupling, especially in high-power, high-dV/dt applications like welding inverters. The device's V_GE(th) range (5–6.5 V) and low IGES (600 nA) make it susceptible to noise without active pull-down.

How does the integrated diode differ from standard FRD counterparts?

This antiparallel diode is co-optimized with the IGBT die using shared Trench/Fieldstop processing, delivering softer reverse recovery (low dirr/dt, no current tail) and lower Q_rr (0.8 µC) than discrete FRDs. Its trr remains stable across temperature (260–470 ns), unlike many FRDs whose recovery degrades significantly above 125°C.

Can IKW15N120H3FKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (increasing from 2.05 V at 25°C to 2.7 V at 175°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and individual emitter resistors (0.1–0.2 Ω) for dynamic balancing, as confirmed in Infineon Application Note AN2015-04.

IKW15N120H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 15A

Power - Max:: 217 W

Switching Energy:: 1.55mJ

Input Type:: Standard

Gate Charge:: 75 nC

Td (on/off) @ 25°C:: 21ns/260ns

Test Condition:: 600V, 15A, 35Ohm, 15V

Reverse Recovery Time (trr):: 260 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW15N120H3FKSA1 FAQ

1.How can I place an order for IKW15N120H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW15N120H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW15N120H3FKSA1 reliable?

The price and inventory of IKW15N120H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW15N120H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW15N120H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW15N120H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW15N120H3FKSA1?

IKW15N120H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW15N120H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW15N120H3FKSA1?

For technical support, including IKW15N120H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW15N120H3FKSA1 requirements.

6.How does Aetrix verify that IKW15N120H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW15N120H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW15N120H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW15N120H3FKSA1?

All IKW15N120H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW15N120H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW15N120H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW15N120H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…