Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW15N120T2FKSA1

Name: IKW15N120T2FKSA1
Brand: Infineon Technologies
SKU: IKW15N120T2FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW15N120T2FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW15N120T2FKSA1.pdf

Description:: IGBT 1200V 30A 235W TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,765

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW15N120T2FKSA1 from Infineon is a 1200 V, 15 A TrenchStop® 2nd generation IGBT with integrated soft-recovery Emitter Controlled Diode in PG-TO-247-3 package. It delivers 1.75 V V_CE(sat) at T_j = 25°C and 10 µs short-circuit withstand time, enabling robust operation in frequency converters and UPS systems.

For engineers reviewing the IKW15N120T2FKSA1 datasheet, IKW15N120T2FKSA1 pinout, IKW15N120T2FKSA1 application, or IKW15N120T2FKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, diode reverse recovery charge (Q_rr = 1.3 µC at 25°C), gate charge (93 nC), thermal resistance (R_thJC = 0.63 K/W), and positive V_CE(sat) temperature coefficient for parallel operation.

Technical Context

This IGBT employs TrenchStop® 2nd generation silicon technology optimized for 1200 V industrial switching applications. Its integrated anti-parallel diode features emitter-controlled structure with soft, fast recovery (t_rr = 300 ns, Q_rr = 1.3 µC at 25°C) and low EMI generation.

The device uses a positive temperature coefficient for V_CE(sat), enabling stable current sharing in paralleled configurations. Short-circuit ruggedness is validated at 10 µs under V_GE = 15 V, V_CC ≤ 600 V, and T_j,start ≤ 175°C - meeting JEDEC JESD47 requirements for target applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	1200 V - supports DC bus voltages up to 900 V in 3-phase rectified systems with margin
I_C Continuous	15 A at T_C = 110°C - defines thermal-limited conduction capability in heatsink-mounted designs
V_CE(sat)	1.75 V at T_j = 25°C - sets conduction loss baseline; rises to 2.2 V at 175°C with stable slope
Q_G	93 nC - determines gate driver power requirement and switching speed control via R_G
t_SC	10 µs - enables reliable desaturation detection and protection circuit response time budget
R_thJC	0.63 K/W - quantifies junction-to-case thermal path efficiency for heatsink interface design
Q_rr	1.3 µC at 25°C - directly impacts turn-on losses of companion IGBT and snubber sizing

Pinout & Package

IKW15N120T2FKSA1 is housed in a PG-TO-247-3 plastic package with isolated mounting flange, rated for 260°C wave soldering and RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power output terminal	Carries full load current; electrically connected to heatsink tab in standard mounting
Gate (G)	Control input for IGBT channel	Requires <±20 V rating; sensitive to ESD; drives 93 nC total gate charge
Emiter (E)	Power return and reference node	Shared cathode for integrated diode; forms low-inductance return path with L_E = 13 nH

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing without external balancing resistors in paralleled IGBTs
Emitter Controlled Diode	Soft reverse recovery (t_rr = 300 ns) reduces voltage overshoot and EMI vs. standard FRDs
Low gate charge (93 nC)	Lowers gate driver power dissipation and allows use of cost-effective 1–2 A peak drivers
JEDEC JESD47 qualified	Validated reliability for industrial UPS and frequency converter deployments over full lifetime
175°C max junction temperature	Supports compact thermal design with reduced heatsink volume in space-constrained enclosures

Applications

Industrial Frequency Converters

Uninterruptible Power Supplies

Use Scenario: Three-phase motor drive inverters operating at 2–16 kHz switching frequency with 600–900 V DC link.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional energy flow during regeneration via integrated diode.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses by ~12% versus prior-gen 1200 V IGBTs at 150°C junction.

Use Scenario: Online double-conversion UPS systems with battery backup, requiring high reliability and fault tolerance.

IC Role / Device Role / Timing Role: Inverter-stage power switch; must survive repeated short-circuit events during grid fault conditions.

Use Value: 10 µs short-circuit withstand time enables deterministic protection triggering without device failure under IEEE 1159-defined surge profiles.

Solar String Inverters

Induction Heating Systems

Use Scenario: Central or string inverters converting PV DC to grid-synchronized AC, operating at 16–30 kHz.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; integrated diode recirculates reactive current during dead-time.

Use Value: Q_rr = 1.3 µC minimizes turn-on loss penalty when paired with complementary IGBT, improving system efficiency by 0.4–0.7% at 25 kW level.

Use Scenario: Medium-frequency (10–50 kHz) resonant inverters supplying power to induction coils in metal heating furnaces.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (≥450 A/µs) and repetitive hard-switching stress.

Use Value: Low EMI due to controlled diode recovery and tight parameter distribution ensures EMC compliance without oversized filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN15N120B3	Higher V_CE(sat) (2.0 V typ.), lower Q_G (65 nC), no integrated diode	Requires external ultrafast diode; better for high-frequency ZVS topologies	Select when gate drive power is constrained and discrete diode layout is acceptable
STMicroelectronics STGW15H120DF2	Similar V_CE(sat) (1.7 V), higher t_SC (15 µs), slower diode (t_rr = 450 ns)	Preferred for high-ruggedness UPS where diode softness is secondary to short-circuit margin	Choose when extended short-circuit immunity outweighs EMI sensitivity in noisy environments

Compared with IXGN15N120B3 and STGW15H120DF2, IKW15N120T2FKSA1 offers the best balance of low conduction loss, soft diode recovery, and proven parallel capability - critical for scalable multi-kW inverter platforms.

Availability

IKW15N120T2FKSA1 is available at Aetrix Electronics and suitable for industrial frequency converters, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IKW15N120T2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TrenchStop® 2nd generation IGBT product line targets medium-voltage industrial motor drives and power conversion systems demanding high ruggedness, tight parameter spread, and reliable paralleling behavior.

FAQ

What is the maximum allowable gate-emitter voltage for IKW15N120T2FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and noise immunity. Gate drive circuits must include clamping or active regulation to prevent transients during switching transitions or layout parasitics.

Does IKW15N120T2FKSA1 require a negative gate voltage for turn-off?

No, zero-volt turn-off is functional but not recommended for robust operation. A –5 V to –10 V negative bias improves noise immunity and prevents spurious turn-on during high dv/dt events. The device's V_GE(th) is 5.2–6.4 V, so 0 V gate ensures safe blocking under typical PCB coupling conditions.

How does the integrated diode differ from a standard FRD?

The Emitter Controlled Diode uses a tailored doping profile and lifetime control to achieve soft, non-oscillatory reverse recovery with low peak reverse current (I_rrm = 10 A at 25°C). Unlike FRDs, it avoids voltage spikes >100 V above V_CE during commutation, reducing snubber losses and EMI filter burden.

Can IKW15N120T2FKSA1 be paralleled without current-sharing resistors?

Yes - its positive V_CE(sat) temperature coefficient ensures inherent current balancing across devices operating at different junction temperatures. Parallel operation requires matched gate drive loop inductance (<5 nH difference) and symmetrical thermal mounting to maintain <10°C inter-device ΔT under full load.

IKW15N120T2FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 15A

Power - Max:: 235 W

Switching Energy:: 2.05mJ

Input Type:: Standard

Gate Charge:: 93 nC

Td (on/off) @ 25°C:: 32ns/362ns

Test Condition:: 600V, 15A, 41.8Ohm, 15V

Reverse Recovery Time (trr):: 300 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW15N120T2FKSA1 FAQ

1.How can I place an order for IKW15N120T2FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW15N120T2FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW15N120T2FKSA1 reliable?

The price and inventory of IKW15N120T2FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW15N120T2FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW15N120T2FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW15N120T2FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW15N120T2FKSA1?

IKW15N120T2FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW15N120T2FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW15N120T2FKSA1?

For technical support, including IKW15N120T2FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW15N120T2FKSA1 requirements.

6.How does Aetrix verify that IKW15N120T2FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW15N120T2FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW15N120T2FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW15N120T2FKSA1?

All IKW15N120T2FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW15N120T2FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW15N120T2FKSA1 part is unused and in its original packaging.

Return procedure for IKW15N120T2FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…