Infineon Technologies IKW20N65ET7XKSA1

Overview

IKW20N65ET7XKSA1 from Infineon is a 650 V, 20 A low-loss IGBT7 Duopack with integrated ultra-soft fast-recovery anti-parallel diode, fabricated using Trench and Fieldstop technology. It delivers 1.65 V typical V_CE(sat) at 20 A/15 V_GE, 0.36 mJ turn-off energy at 25 °C, and supports 175 °C maximum junction temperature - enabling high-efficiency motor control in servo drives and solar string inverters.

For engineers reviewing the IKW20N65ET7XKSA1 datasheet, IKW20N65ET7XKSA1 pinout, IKW20N65ET7XKSA1 application, or IKW20N65ET7XKSA1 equivalent, key selection criteria include its 1.1 K/W IGBT R_th(j-c), 70 ns diode t_rr at 25 °C, short-circuit withstand time of 5 µs (V_CC ≤ 330 V), and JEDEC-qualified industrial reliability.

Technical Context

This IGBT7 Duopack integrates a trench-gate field-stop IGBT and a soft-recovery freewheeling diode in a single PG-TO247-3 package. Its design targets high-frequency switching in hard-switched topologies, with low tail current and reduced EMI due to controlled dV/dt and optimized charge characteristics (Q_G = 128 nC, C_res = 13 pF).

The device operates across –40 °C to +175 °C junction temperature, with gate threshold voltage V_GE(th) tightly distributed (4.3–5.7 V) and transconductance g_fs of 10 S - supporting stable gate drive design and robust short-circuit protection in industrial UPS and SMPS applications.

Key Specifications

Pinout & Package

Delivered in PG-TO247-3 package with isolated mounting hole, copper baseplate, and RoHS-compliant Pb-free plating. Thermal resistance R_th(j-c) = 1.1 K/W (IGBT) / 1.4 K/W (diode); internal emitter inductance L_E = 13 nH measured 5 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode power switching applications.

Compared with IKW20N65ET7XKSA1, IKW25N65ES5XKSA1 trades efficiency for legacy compatibility, while FGH40T65SHD offers superior thermal performance at the cost of board area and BOM count - making the Duopack optimal for space-constrained, high-reliability industrial inverters.

Availability

IKW20N65ET7XKSA1 is available at Aetrix Electronics and suitable for servo drives, industrial UPS, and solar string inverters requiring stable component supply, long lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW20N65ET7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

This part belongs to the IGBT7 Duopack product line, engineered specifically for high-efficiency, high-reliability industrial motor drives and renewable energy conversion systems demanding low conduction/switching loss and robust thermal operation.

FAQ

What is the maximum gate-emitter voltage rating for IKW20N65ET7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient capability up to ±30 V for pulses ≤10 µs and duty cycle <1%. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must clamp at 15 V for reliable 15 V_GE turn-on and –5 V to –10 V turn-off bias.

Does IKW20N65ET7XKSA1 require an external freewheeling diode?

No - it integrates a matched ultra-soft fast-recovery diode rated for 650 V V_RRM and 20 A continuous forward current. The diode shares the same thermal path and exhibits 70 ns t_rr at 25 °C, eliminating need for discrete pairing in standard inverter leg configurations.

How is the collector terminal configured in the PG-TO247-3 package?

The collector is electrically and thermally connected to both pin 2 (top-side lead) and the entire metal backside of the package. This dual-path design reduces parasitic inductance and improves thermal transfer to the heatsink - critical for minimizing voltage overshoot and maintaining R_th(j-c) = 1.1 K/W.

What JEDEC standards apply to IKW20N65ET7XKSA1 qualification?

It is qualified per JEDEC47 (stress-test guidelines), JEDEC20 (robustness validation), and JEDEC22 (reliability testing), covering HTRB, HTGB, uHAST, temperature cycling, and bondwire pull tests - confirming suitability for industrial environments with 15-year operational life expectations.