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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW25N120CS7XKSA1

Name: IKW25N120CS7XKSA1
Brand: Infineon Technologies
SKU: IKW25N120CS7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW25N120CS7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW25N120CS7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 55A TO247-3

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Product details

Overview

IKW25N120CS7XKSA1 from Infineon is a 1200 V, 25 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3 package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, t_SC = 8 µs, and optimized dv/dt controllability for hard-switching inverters. Used in solar inverters and industrial drives where high blocking voltage and thermal robustness are critical.

For engineers reviewing the IKW25N120CS7XKSA1 datasheet, IKW25N120CS7XKSA1 pinout, IKW25N120CS7XKSA1 application, or IKW25N120CS7XKSA1 equivalent, key selection criteria include short-circuit withstand time, junction-to-case thermal resistance (R_th(jc) = 0.45–0.60 K/W for IGBT), co-packaged diode Q_rr (1.45–3.60 µC), and gate charge (Q_G = 150 nC) for switching loss estimation.

Technical Context

This device implements TRENCHSTOP™ IGBT 7 silicon technology with an integrated Emitter Controlled 7 diode-both rated for 1200 V blocking and sharing a common thermal path. The IGBT features a gate-emitter threshold voltage (V_GE(th)) of 5.15–6.45 V and transconductance (g_fs) of 11.0 S at T_vj = 175 °C, enabling stable current control under high-temperature operation.

The co-packaged diode exhibits low reverse recovery charge (Q_rr = 1.45 µC typ. at 25 °C) and soft recovery (trr = 150 ns typ.), reducing voltage overshoot and EMI in NPC and T-type three-level topologies. Its dI_rr/dt reaches –220 A/µs at 25 °C, supporting fast, controlled turn-off in high-dv/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Enables use in 1000 V DC-link solar inverters and industrial 3-phase rectified supplies without derating.
I_C	25 A continuous - Rated for sustained conduction at T_C = 100 °C, supporting compact heatsink designs.
V_CE(sat)	2.0 V at T_vj = 175 °C - Minimizes conduction loss and self-heating during overload conditions.
t_SC	8 µs - Provides deterministic fault handling in motor drives and UPS systems without external desaturation detection.
Q_G	150 nC - Determines gate driver power requirement and influences switching speed trade-offs in hard-switched topologies.
R_th(jc) (IGBT)	0.45–0.60 K/W - Enables precise junction temperature estimation for thermal protection and lifetime modeling.
Q_rr (Diode)	1.45–3.60 µC - Directly impacts turn-off losses and snubber sizing in bidirectional energy transfer paths.

Pinout & Package

Delivered in PG-TO247-3 package: isolated mounting hole, standard TO-247 footprint, and 13.0 nH internal emitter inductance measured 5 mm from case. Thermal resistance R_th(jc) = 0.45–0.60 K/W (IGBT) and 0.90–1.25 K/W (diode).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full load current and withstands 1200 V transient spikes.
Gate (G)	Control input	Requires ±20 V rating; 150 nC total gate charge demands ≥2 A peak gate driver capability for <100 ns switching.
Emiter (E)	Power return and reference node	Shared emitter for IGBT and diode; low-inductance layout essential to avoid shoot-through and false triggering.

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand at V_CC ≤ 600 V and T_vj = 150 °C - Eliminates need for complex active desaturation circuits in cost-sensitive industrial drives.
Co-packed soft-recovery diode	Q_rr = 1.45 µC (25 °C), trr = 150 ns - Reduces voltage overshoot and EMI in 3L-NPC inverters without external snubbers.
High-temperature V_CE(sat)	2.0 V at T_vj = 175 °C - Ensures predictable conduction loss and thermal stability in sealed enclosures.
Wide dv/dt controllability	Tested up to 5 kV/µs - Supports reliable operation in high-speed SiC-compatible gate drivers and fast-switching topologies.

Applications

Solar Inverter Stage

Industrial Motor Drive

Use Scenario: Three-level T-type inverter stage converting 1000 V DC-link to grid-synchronized AC output.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated anti-parallel diode conducting freewheeling current during dead-time intervals.

Use Value: Low Q_rr and soft recovery minimize commutation losses and reduce filter component stress in high-frequency MPPT operation.

Use Scenario: 2-level inverter powering 15–30 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching element in hard-switched inverter leg, operating at 4–16 kHz with overcurrent fault tolerance.

Use Value: 8 µs short-circuit withstand enables safe shutdown using standard MCU-based protection without dedicated analog fault ICs.

Uninterruptible Power Supply

Industrial Power Supply

Use Scenario: Online double-conversion UPS delivering clean 230 V AC during mains failure with battery backup.

IC Role / Device Role / Timing Role: Inverter-stage switch managing bidirectional energy flow between battery DC bus and AC output.

Use Value: Co-packaged diode with low reverse recovery charge reduces cross-conduction risk during zero-voltage switching transitions.

Use Scenario: High-efficiency 3 kW telecom rectifier with PFC front-end and isolated DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology handling 1200 V DC input.

Use Value: 1200 V rating allows direct connection to unregulated rectified input, eliminating pre-regulator stages and improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW25N120H3	Same 1200 V/25 A rating but uses TRENCHSTOP™ IGBT 3 + Calogic diode; higher V_CE(sat) (2.3 V @ 175 °C) and longer t_SC (6 µs).	Limited to lower-switching-frequency industrial drives; lacks soft-recovery diode optimization for 3L topologies.	Select when cost sensitivity outweighs switching loss and EMI requirements.
FGH25N120FTD	ON Semiconductor 1200 V/25 A IGBT with FRED diode; V_CE(sat) = 2.1 V @ 175 °C, Q_rr = 2.2 µC @ 25 °C, no published t_SC spec.	Valid for 2L inverters but not qualified for short-circuit ruggedness per JEDEC JESD47; requires external desat detection.	Select only if legacy design compatibility or dual-source strategy mandates ON Semi footprint.

Compared with IKW25N120CS7XKSA1, IKW25N120H3 trades switching performance for cost, while FGH25N120FTD lacks validated short-circuit ruggedness and soft diode behavior-making both less suitable for next-generation solar and NPC inverter designs requiring robust fault handling and low EMI.

Availability

IKW25N120CS7XKSA1 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production line.

Supply support for IKW25N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in solar, UPS, and industrial drive systems where 1200 V blocking and thermal resilience are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IKW25N120CS7XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating up to ±25 V for pulses ≤0.5 µs and duty cycle <0.001. Exceeding ±20 V continuously risks permanent gate oxide damage; gate driver designs must include clamping or Zener protection aligned to this limit.

Does IKW25N120CS7XKSA1 include a built-in diode, and what are its key ratings?

Yes-it integrates a full-rated soft-recovery Emitter Controlled 7 diode co-packaged in the same TO247-3 housing. Key diode specs include V_RRM = 1200 V, I_F = 41 A at T_C = 25 °C, Q_rr = 1.45 µC (25 °C), and trr = 150 ns (25 °C), all verified per Infineon's industrial qualification standards.

Can IKW25N120CS7XKSA1 be used in three-level neutral-point-clamped (3L-NPC) inverters?

Yes-its soft-recovery diode, low Q_rr, and 8 µs short-circuit ruggedness are explicitly validated for 3L-NPC and T-type topologies. Infineon provides PSpice models and application notes confirming stable operation under bidirectional conduction and high dv/dt commutation stress.

What is the thermal resistance from junction to case for the IGBT portion?

The IGBT's junction-to-case thermal resistance R_th(jc) is specified as 0.45 K/W (typical) and 0.60 K/W (max) under standard mounting conditions. This value is measured with 0.6 Nm screw torque on M3 hardware and is critical for calculating maximum allowable case temperature at 25 A continuous operation.

IKW25N120CS7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 75 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 25A

Power - Max:: 250 W

Switching Energy:: 1.2mJ (on), 1.1mJ (off)

Input Type:: Standard

Gate Charge:: 150 nC

Td (on/off) @ 25°C:: 21ns/160ns

Test Condition:: 600V, 25A, 6Ohm, 15V

Reverse Recovery Time (trr):: 150 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW25N120CS7XKSA1 FAQ

1.How can I place an order for IKW25N120CS7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW25N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW25N120CS7XKSA1 reliable?

The price and inventory of IKW25N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW25N120CS7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW25N120CS7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW25N120CS7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW25N120CS7XKSA1?

IKW25N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW25N120CS7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW25N120CS7XKSA1?

For technical support, including IKW25N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW25N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKW25N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW25N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW25N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW25N120CS7XKSA1?

All IKW25N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW25N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW25N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKW25N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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