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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW25N120H3FKSA1

Name: IKW25N120H3FKSA1
Brand: Infineon Technologies
SKU: IKW25N120H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW25N120H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW25N120H3FKSA1.pdf

Description:: IGBT TRENCH FS 1200V 50A TO247-3

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Product details

Overview

IKW25N120H3FKSA1 from Infineon is a 1200 V, 25 A high-speed DuoPack IGBT with integrated soft-recovery antiparallel diode in Trench/Fieldstop technology. It delivers 2.4 V typical V_CE(sat) at 25 A/15 V_GE, 175 °C max junction temperature, and 290 ns typ reverse recovery time (t_rr) - optimized for high-frequency welding converters and UPS inverters requiring low EMI and robust short-circuit ruggedness.

For engineers reviewing the IKW25N120H3FKSA1 datasheet, IKW25N120H3FKSA1 pinout, IKW25N120H3FKSA1 application, or IKW25N120H3FKSA1 equivalent, this device supports precise gate-drive timing analysis, thermal derating validation against T_c = 100 °C, and direct replacement evaluation in 600–960 V DC-link hard-switching topologies with <10 µs short-circuit withstand capability.

Technical Context

This IGBT-diode DuoPack uses trench-gate and field-stop drift layer design to simultaneously minimize conduction loss (V_CE(sat) = 2.4 V typ) and switching loss (E_on = 1.8 mJ, E_off = 0.85 mJ at 25 °C). Its integrated diode features soft recovery (t_rr = 290 ns, Q_rr = 1.2 µC) and low reverse recovery current (I_rrm = 10.4 A), reducing voltage overshoot and snubber stress.

The device operates up to 175 °C junction temperature with R_th(j-c) = 0.46 K/W (IGBT) and 1.49 K/W (diode), enabling compact heatsink designs. Gate charge is 115 nC with C_ies = 1430 pF, supporting stable 23 Ω gate drive under 600 V bus conditions without oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Supports 960 V DC-link operation with 20% safety margin in industrial UPS and welding systems.
I_C (continuous)	25 A at T_c = 100 °C - Enables rated output power without forced air cooling in enclosed converter cabinets.
V_CE(sat)	2.4 V typ @ 25 A, 15 V_GE, 25 °C - Reduces conduction loss by ~18% vs. prior-generation 1200 V IGBTs, lowering thermal load on heatsinks.
t_rr (diode)	290 ns typ @ 25 °C - Limits diode-induced voltage spikes during turn-on, easing EMI filter design and reducing snubber capacitor sizing.
t_SC	10 µs @ V_CC ≤ 600 V, V_GE = 15 V - Allows reliable fault detection and shutdown in real-time protection circuits without desaturation circuitry overload.
R_th(j-c) (IGBT)	0.46 K/W - Enables thermal interface design with ≤ 1.5 K/W total system resistance to maintain T_vj < 150 °C at full load.
Q_G	115 nC - Matches standard 15 V gate drivers (e.g., 1ED020I12FA) with <1 µs turn-on delay and minimal Miller plateau duration.

Pinout & Package

Package: PG-TO247-3 (standard through-hole TO-247 variant with isolated collector tab). Mounting torque: 0.6 Nm (M3 screw). Thermal pad exposed on backside for direct heatsink contact.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	High-impedance MOS-controlled input; requires 15 V nominal drive, ±20 V absolute max rating; sensitive to ESD and ringing.
C	Collector terminal	Main high-side power output node; electrically connected to metal tab (backside); must be isolated from heatsink unless floating topology.
E	Emitter terminal	Low-side reference for gate drive and current sensing; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Trench + Fieldstop IGBT structure	Enables simultaneous low V_CE(sat) and fast switching - critical for >20 kHz hard-switched welder inverters.
Soft, fast-recovery antiparallel diode	Reduces diode-induced dv/dt stress on IGBT during commutation, eliminating need for external snubbers in many UPS designs.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., sealed industrial enclosures) without derating below 25 A continuous.
JEDEC-qualified reliability	Validated for industrial lifetime requirements including temperature cycling, humidity, and high-temperature operating life (HTOL).
Pb-free, RoHS-compliant plating	Meets global environmental compliance mandates without sacrificing solder joint integrity or wire-bond reliability.

Applications

Welding Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-frequency (20–50 kHz) DC-link switching in IGBT-based inverter stages of arc welding machines.

IC Role / Device Role / Timing Role: Main power switch in single-phase or three-phase inverter bridge; handles pulsed 100 A peak currents with <10 µs short-circuit tolerance.

Use Value: Low t_rr and soft recovery minimize voltage overshoot across transformer primary, reducing insulation stress and audible noise during arc initiation.

Use Scenario: Online double-conversion UPS systems with 600–960 V DC bus and battery backup integration.

IC Role / Device Role / Timing Role: Output stage IGBT in inverter leg; switches at 16–20 kHz with synchronous rectification via integrated diode.

Use Value: 2.4 V V_CE(sat) reduces conduction losses by ~3.5 W per device vs. legacy 1200 V parts, improving system efficiency from 94.2% to 94.8% at full load.

Solar Central Inverters

Induction Heating Systems

Use Scenario: Three-level NPC or T-type inverter stages in ≥100 kW photovoltaic central inverters.

IC Role / Device Role / Timing Role: High-side switch in medium-voltage DC-AC conversion; subjected to repetitive 600 V bus transients and grid-synchronization timing.

Use Value: 115 nC Q_G enables clean, low-loss gate driving with standard isolated gate drivers, minimizing propagation delay mismatch across multi-phase legs.

Use Scenario: Resonant half-bridge inverters in industrial induction heating (10–50 kHz range) for metal forging and brazing.

IC Role / Device Role / Timing Role: Hard-switched main switch with zero-voltage switching (ZVS) assist; relies on diode reverse recovery characteristics for resonant tank control.

Use Value: 1.2 µC Q_rr and -150 A/µs dirr/dt ensure predictable resonant timing and reduce dead-time sensitivity, improving power transfer stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT-DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN25N120B3	Higher V_CE(sat) (2.7 V typ), slower t_rr (380 ns), higher Q_G (145 nC)	Less suitable for >30 kHz switching; requires larger gate driver and heatsink	Select when cost sensitivity outweighs efficiency targets and thermal envelope is relaxed.
STMicroelectronics STGW25H120DF2	Lower I_C rating (20 A @ T_c = 100 °C), same V_CE, softer diode (t_rr = 320 ns but lower Q_rr = 0.95 µC)	Better for lower-power UPS or smaller welders where peak current demand is ≤20 A	Prefer when diode softness is prioritized over current rating and board space is constrained.

Compared with IXGN25N120B3 and STGW25H120DF2, IKW25N120H3FKSA1 offers the best balance of low conduction loss, fast switching, and rugged short-circuit performance - making it optimal for high-efficiency, high-reliability 25 A industrial inverters where thermal headroom and EMI control are critical.

Availability

IKW25N120H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, and solar central inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production lines.

Supply support for IKW25N120H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IKW25N120H3 belongs to Infineon's High Speed DuoPack IGBT product line, engineered specifically for high-frequency hard-switching applications demanding low EMI, soft recovery, and 175 °C operation in mission-critical power conversion.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 23 Ω for characterization. For safe operation, use 15–25 Ω series gate resistors with active Miller clamping. Higher values (>33 Ω) increase switching losses and risk shoot-through in parallel configurations due to uneven turn-on timing.

Can IKW25N120H3FKSA1 be used in parallel configurations?

Yes - its positive V_GE(th) temperature coefficient (5.8–6.5 V) and flat output characteristics enable current sharing. Use matched gate drivers, symmetrical PCB layout, and individual emitter resistors (0.1 Ω) to balance dynamic current distribution across paralleled devices.

Is the backside collector electrically isolated from the package mounting surface?

No - the collector (C) is directly connected to the metal tab (backside). Electrical isolation from the heatsink is mandatory unless the application uses a floating collector topology. Use ceramic or silicone-insulated thermal pads with ≥2.5 kV dielectric strength.

Does this part include built-in overtemperature protection?

No - IKW25N120H3FKSA1 has no integrated temperature sensor or shutdown logic. System-level thermal protection must be implemented externally using NTC thermistors on the heatsink or direct case temperature monitoring with response time <100 ms.

IKW25N120H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 25A

Power - Max:: 326 W

Switching Energy:: 2.65mJ

Input Type:: Standard

Gate Charge:: 115 nC

Td (on/off) @ 25°C:: 27ns/277ns

Test Condition:: 600V, 25A, 23Ohm, 15V

Reverse Recovery Time (trr):: 290 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW25N120H3FKSA1 FAQ

1.How can I place an order for IKW25N120H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW25N120H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW25N120H3FKSA1 reliable?

The price and inventory of IKW25N120H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW25N120H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW25N120H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW25N120H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW25N120H3FKSA1?

IKW25N120H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW25N120H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW25N120H3FKSA1?

For technical support, including IKW25N120H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW25N120H3FKSA1 requirements.

6.How does Aetrix verify that IKW25N120H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW25N120H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW25N120H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW25N120H3FKSA1?

All IKW25N120H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW25N120H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW25N120H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW25N120H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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