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Infineon Technologies IKW25N120T2FKSA1

Part No.:
IKW25N120T2FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW25N120T2FKSA1.pdf
Description:
IGBT TRENCH 1200V 50A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:557

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Product details

Overview

IKW25N120T2FKSA1 from Infineon is a 1200 V, 25 A TrenchStop® 2nd generation IGBT with integrated soft-fast anti-parallel emitter-controlled diode in PG-TO-247-3 package. It delivers 1.7 V VCE(sat) at 25 °C, 10 µs short-circuit withstand time, and 120 nC total gate charge - optimized for frequency converters and uninterruptible power supplies requiring rugged switching under high-voltage, medium-current conditions.

For engineers reviewing the IKW25N120T2FKSA1 datasheet, IKW25N120T2FKSA1 pinout, IKW25N120T2FKSA1 application, or IKW25N120T2FKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for stable paralleling, low EMI profile, and JEDEC1-qualified reliability for industrial UPS and motor drive systems.

Technical Context

This IGBT uses TrenchStop® 2nd generation silicon technology to achieve tight parameter distribution and temperature-stable behavior up to 175 °C junction temperature. Its integrated emitter-controlled diode features 195 ns reverse recovery time (Tj = 25 °C) and 2.05 µC Qrr, enabling low-loss commutation in hard-switched topologies.

The device operates with ±20 V gate-emitter voltage rating and exhibits 13.5 S transconductance at 25 °C. Its thermal resistance from junction-to-case is 0.43 K/W (IGBT) and 0.81 K/W (diode), supporting high-power density designs when mounted on heatsinks with controlled thermal interface resistance.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1200 V - supports DC bus voltages up to 900 V in 3-phase rectified systems with margin
IC25 A continuous at TC = 110 °C - enables compact inverter stages in 5–10 kW UPS modules
VCE(sat)1.7 V @ Tj = 25 °C - reduces conduction loss by ~15% vs. first-gen 1200 V IGBTs at rated current
tSC10 µs - allows robust protection coordination with fast gate drivers in fault events
Qg120 nC - determines gate driver peak current requirement (~2.4 A for 50 ns rise time)
trr / Qrr195 ns / 2.05 µC @ Tj = 25 °C - minimizes diode-induced turn-on losses and voltage overshoot
RthJC0.43 K/W - defines maximum allowable case-to-heatsink thermal resistance for 175 °C Tj limit

Pinout & Package

PG-TO-247-3 package with isolated mounting hole, standard lead frame geometry, and creepage/clearance compliant with IEC 61800-5-1 for 1200 V systems.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC+ bus; carries full load current and fault current during short-circuit events
Gate (G)Control input for IGBT channelRequires low-inductance gate loop; sensitive to dV/dt coupling due to 90 pF Crss
Emiter (E)Common emitter node for IGBT and anti-parallel diodeServes as power ground reference; must be low-impedance to minimize shoot-through risk

Key Features

FeatureDesign Value
Positive VCE(sat) temperature coefficientEnables stable current sharing in parallel configurations without external current-balancing resistors
Soft, fast anti-parallel diodeReduces voltage spikes and EMI during freewheeling, eliminating need for external snubbers in many 10–20 kHz designs
Low gate charge (120 nC)Lowers required gate driver power and simplifies isolation design for high-density inverters
JEDEC1 qualificationValidates reliability for industrial UPS and frequency converter applications per stress-test protocols
Pb-free, RoHS-compliant platingMeets environmental compliance requirements for global OEM production without requalification

Applications

Industrial UPS SystemsThree-Phase Motor Drives

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output during grid failure or sag.

IC Role / Device Role / Timing Role: Main inverter switch in three-phase bridge, operating at 8–16 kHz PWM with 50–100 µs dead time.

Use Value: 10 µs short-circuit rating enables fast desaturation detection and safe shutdown before transformer saturation or capacitor overcurrent.

Use Scenario: Variable-frequency drive controlling induction motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in 3-level NPC or 2-level inverter stage, handling 400–690 V AC line-derived DC bus.

Use Value: 1.7 V VCE(sat) and low switching energy (2.9 mJ total @ 25 °C) reduce thermal load and enable smaller heatsinks in space-constrained enclosures.

Solar String InvertersEnergy Storage System (ESS) Bi-directional Converters

Use Scenario: DC–AC conversion stage in residential solar inverters with 800–1000 V DC input.

IC Role / Device Role / Timing Role: IGBT in H-bridge output stage, switching at 12–20 kHz with sinusoidal PWM modulation.

Use Value: Integrated emitter-controlled diode eliminates need for discrete fast-recovery diodes, reducing BOM count and layout complexity.

Use Scenario: Bi-directional DC–DC stage interfacing battery stacks (600–900 V) with grid-tied inverters.

IC Role / Device Role / Timing Role: Switch in interleaved buck-boost topology, conducting bidirectional current with low conduction loss in both directions.

Use Value: Symmetrical thermal resistance (RthJC = 0.43 K/W IGBT / 0.81 K/W diode) ensures balanced junction temperature rise during charge/discharge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW25N120H3Third-generation TrenchStop®, lower VCE(sat) (1.65 V), higher Qg (135 nC), same packageBetter conduction efficiency but higher gate drive demand; suited for lower-frequency (<10 kHz) high-efficiency designsSelect for improved system efficiency where gate driver capability permits higher Qg handling
FGA25N120ANTDON Semiconductor alternative, 1200 V/25 A, VCE(sat) = 1.8 V, tSC = 6 µs, TO-247-3Shorter short-circuit rating limits fault tolerance in high-reliability UPS; requires tighter protection timingAcceptable for cost-sensitive motor drives where full 10 µs fault window is not required

Compared with IKW25N120H3 and FGA25N120ANTD, the IKW25N120T2FKSA1 offers the optimal balance of short-circuit robustness, gate drive simplicity, and thermal stability for industrial UPS and frequency converter designs operating at 10–16 kHz.

Availability

IKW25N120T2FKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, three-phase motor drives, solar string inverters, and energy storage system bi-directional converters requiring stable component supply across multi-year production cycles.

Supply support for IKW25N120T2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TrenchStop® 2nd generation IGBT product line was engineered specifically for high-voltage industrial inverters demanding ruggedness, predictable short-circuit behavior, and simplified thermal design in frequency converters and UPS systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 16.4 Ω gate resistor is specified in the datasheet for dynamic characterization at Tj = 175 °C. Using >25 Ω increases turn-off delay (265 ns → 340 ns) and total switching energy (2.9 mJ → 4.3 mJ), risking thermal overload at high frequencies. For 12–16 kHz operation, 12–18 Ω is optimal to balance EMI and loss.

Does this IGBT require an external freewheeling diode?

No. The IKW25N120T2FKSA1 integrates a soft, fast emitter-controlled diode with 195 ns trr and 2.05 µC Qrr at 25 °C. This diode is co-packaged and thermally coupled to the IGBT die, eliminating the need for discrete antiparallel diodes in standard inverter leg configurations.

How does the positive VCE(sat) temperature coefficient improve paralleling performance?

As junction temperature rises, VCE(sat) increases - causing current to naturally shift away from hotter devices. This self-balancing effect prevents thermal runaway during parallel operation, allowing up to four devices to share current within ±10% without active current sensing or ballasting resistors.

Is the PG-TO-247-3 package compatible with standard TO-247 heatsink mounts?

Yes. The PG-TO-247-3 follows JEDEC TO-247 outline standards with identical mechanical dimensions, mounting hole position, and lead pitch. It uses standard M3 screws and thermal interface materials; no adapter or custom fixture is required for legacy TO-247 heatsink integration.

IKW25N120T2FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Not For New Designs
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
50 A
Current - Collector Pulsed (Icm):
100 A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 25A
Power - Max:
349 W
Switching Energy:
2.9mJ
Input Type:
Standard
Gate Charge:
120 nC
Td (on/off) @ 25°C:
27ns/265ns
Test Condition:
600V, 25A, 16.4Ohm, 15V
Reverse Recovery Time (trr):
195 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IKW25N120T2FKSA1 FAQ

1.How can I place an order for IKW25N120T2FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW25N120T2FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW25N120T2FKSA1 reliable?

The price and inventory of IKW25N120T2FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW25N120T2FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW25N120T2FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW25N120T2FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW25N120T2FKSA1?

IKW25N120T2FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW25N120T2FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW25N120T2FKSA1?

For technical support, including IKW25N120T2FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW25N120T2FKSA1 requirements.

6.How does Aetrix verify that IKW25N120T2FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW25N120T2FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW25N120T2FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW25N120T2FKSA1?

All IKW25N120T2FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW25N120T2FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW25N120T2FKSA1 part is unused and in its original packaging.

Return procedure for IKW25N120T2FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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