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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N60H3FKSA1

Name: IKW30N60H3FKSA1
Brand: Infineon Technologies
SKU: IKW30N60H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N60H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N60H3FKSA1.pdf

Description:: IGBT TRENCH FS 600V 60A TO247-3

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Product details

Overview

IKW30N60H3FKSA1 from Infineon is a 600 V, 30 A high-speed IGBT in Trench and Fieldstop technology, integrated with a soft, fast-recovery anti-parallel diode in a single PG-TO247-3 package. It delivers 1.95 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time-enabling efficient, high-frequency switching in industrial power converters.

For engineers reviewing the IKW30N60H3FKSA1 datasheet, IKW30N60H3FKSA1 pinout, IKW30N60H3FKSA1 application, or IKW30N60H3FKSA1 equivalent, key selection criteria include its low conduction loss, soft diode recovery (trr = 38 ns @ 25°C), EMI-optimized switching behavior, and JEDEC-qualified reliability for uninterruptible power supplies and welding inverters.

Technical Context

This IGBT employs TRENCHSTOP™ third-generation architecture to minimize V_CE(sat) and switching losses simultaneously. Its monolithic DuoPack integration pairs the IGBT die with a dedicated soft-recovery diode, eliminating external diode layout complexity and reducing parasitic inductance.

The device supports gate drive with ±20 V V_GE, operates up to 175°C junction temperature, and maintains stable dynamic performance across temperature-evidenced by only +0.55 V increase in V_CE(sat) from 25°C to 175°C at 30 A, and predictable E_off rise from 0.44 mJ to 0.60 mJ over the same range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Supports DC bus voltages up to 400 V with robust 1.5× safety margin in hard-switched industrial converters.
I_C	30 A continuous @ T_C = 100°C - Enables compact thermal design in space-constrained UPS and welder modules.
V_CE(sat)	1.95 V @ 25°C, 30 A - Reduces conduction loss to ~58.5 W at full load, lowering heatsink requirements.
t_SC	5 µs @ V_GE = 15 V, V_CC ≤ 400 V - Allows reliable short-circuit protection implementation without desaturation circuitry overhead.
trr	38 ns @ 25°C, 15 A - Minimizes diode reverse recovery loss and voltage overshoot during turn-on of complementary switch.
E_ts	1.38 mJ @ 25°C - Total switching energy per cycle enables >50 kHz operation in resonant and phase-shifted topologies.
R_th(j–c)	0.80 K/W - Enables direct mounting to heatsink with predictable thermal resistance for junction-to-case path.

Pinout & Package

IKW30N60H3FKSA1 uses the PG-TO247-3 package: insulated plastic case, 3-pin vertical mount, 4.5 mm lead pitch, and 15.8 mm lead length. The package supports high-power dissipation (187 W @ T_C = 25°C) and meets RoHS and JEDEC qualification standards.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus positive; carries full load current and must be routed with low-inductance layout to suppress voltage spikes.
Gate (G)	Control input	Requires 15 V turn-on / –5 V to –10 V turn-off bias; sensitive to noise-needs local 100 nF decoupling and gate resistor tuning (r_G = 10.5 Ω typical).
Emitter (E)	Power return and reference node	Serves as common reference for gate drive and current sensing; internal emitter inductance (L_E = 13 nH) impacts switching waveform fidelity.

Key Features

Feature	Design Value
TRENCHSTOP™ third-generation IGBT die	Delivers 1.95 V V_CE(sat) and 0.44 mJ E_off at 25°C-optimizing trade-off between conduction and switching loss for 20–100 kHz applications.
Integrated soft-recovery anti-parallel diode	trr = 38 ns, Q_rr = 0.32 µC @ 25°C-reduces diode-induced voltage overshoot and EMI compared to standard FRD pairing.
175°C maximum junction temperature	Enables operation in high-ambient environments (e.g., enclosed welder cabinets) without derating beyond datasheet curves.
JEDEC-qualified reliability	Validated for industrial power control lifetime targets-supports long-term deployment in mission-critical UPS systems.
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements without sacrificing solderability or thermal cycling endurance.

Applications

Uninterruptible Power Supplies (UPS)

Industrial Welding Inverters

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output from rectified DC bus under mains failure.

IC Role / Device Role: High-side IGBT in three-phase inverter stage, switching at 16–25 kHz to synthesize sinusoidal output via PWM.

Use Value: Low V_CE(sat) reduces conduction loss during extended battery runtime; soft diode limits dv/dt stress on output filter capacitors.

Use Scenario: Inverter-based arc welding equipment requiring precise current control and rapid response to load transients.

IC Role / Device Role: Main switching element in primary-side DC–AC inverter, operating at 20–50 kHz with variable duty cycle modulation.

Use Value: 5 µs short-circuit rating allows safe handling of arc re-ignition events; 175°C rating sustains performance during prolonged high-duty-cycle welding.

High-Frequency Motor Drives

Induction Heating Converters

Use Scenario: Closed-loop vector-controlled drives for HVAC compressors and pumps, operating at 4–16 kHz carrier frequency.

IC Role / Device Role: Output stage switch in 6-pulse inverter bridge, modulated via SVPWM to regulate motor torque and speed.

Use Value: Predictable E_ts (1.38–1.72 mJ across temperature) enables accurate thermal modeling and inverter efficiency optimization.

Use Scenario: Resonant half-bridge converters generating 20–100 kHz RF heating currents in induction cooktops and metal hardening systems.

IC Role / Device Role: Hard-switched upper/lower leg switch in series-resonant topology, conducting high di/dt currents with minimal tail loss.

Use Value: Low internal emitter inductance (13 nH) preserves switching waveform integrity; fast diode recovery avoids shoot-through risk during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW25N60H3	Lower I_C rating (25 A vs. 30 A), identical V_CE, V_CE(sat), and trr; 0.15 mJ lower E_off.	Better suited for thermally constrained 20–25 A designs where peak current margin is not required.	Select when system-level thermal budget permits lower current rating and reduced gate drive energy is beneficial.
FGH30N60UF	600 V, 30 A ultrafast IGBT; higher V_CE(sat) (2.2 V), faster t_f (15 ns), but no integrated diode-requires external FRD.	Preferred in designs needing fastest possible fall time and where discrete diode layout is acceptable.	Choose only if board layout allows separate diode placement and system EMI filtering can accommodate higher di/dt.

Compared with IKW25N60H3 and FGH30N60UF, IKW30N60H3FKSA1 uniquely combines rated 30 A current capability, integrated soft diode, and industry-leading V_CE(sat)/E_off balance-making it optimal for compact, high-efficiency industrial inverters where layout simplicity and thermal headroom are critical.

Availability

IKW30N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding inverters, and high-frequency motor drives requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.

Supply support for IKW30N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW30N60H3FKSA1 belongs to Infineon's TRENCHSTOP™ High-Speed Switching Series-designed specifically for industrial power conversion systems demanding low-loss, high-reliability switching at frequencies up to 100 kHz.

FAQ

What is the maximum recommended gate resistor value for IKW30N60H3FKSA1 in a 40 kHz inverter?

The datasheet specifies r_G = 10.5 Ω for characterization at 400 V, 30 A, and 1000 A/µs di/dt. For 40 kHz operation, a gate resistor between 8 Ω and 15 Ω balances switching loss and EMI; values above 15 Ω increase E_on disproportionately and risk incomplete turn-on at high temperature.

Does IKW30N60H3FKSA1 require negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V / +15 V gate drive. While –5 V to –10 V improves noise immunity and dV/dt ruggedness, it is not required for functional operation-datasheet timing and loss data are all measured with 0 V / +15 V.

Can IKW30N60H3FKSA1 replace IKW30N60H2 in an existing design?

Yes-pin-compatible and electrically backward-compatible. The H3 generation improves V_CE(sat) by ~0.1 V and reduces E_off by ~15% versus H2, with identical package, pinout, and maximum ratings. No layout or gate drive changes are needed.

What is the thermal resistance from junction to ambient (R_th(j–a)) for IKW30N60H3FKSA1?

R_th(j–a) is 40 K/W under standard JEDEC test conditions (still air, no heatsink). This value applies only to the bare device on a PCB; actual system-level R_th(j–a) depends entirely on heatsink design, mounting pressure, and thermal interface material-use R_th(j–c) = 0.80 K/W for heatsink-coupled thermal modeling.

IKW30N60H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 187 W

Switching Energy:: 1.38mJ

Input Type:: Standard

Gate Charge:: 165 nC

Td (on/off) @ 25°C:: 21ns/207ns

Test Condition:: 400V, 30A, 10.5Ohm, 15V

Reverse Recovery Time (trr):: 38 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW30N60H3FKSA1 FAQ

1.How can I place an order for IKW30N60H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N60H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N60H3FKSA1 reliable?

The price and inventory of IKW30N60H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N60H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N60H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N60H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N60H3FKSA1?

IKW30N60H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N60H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N60H3FKSA1?

For technical support, including IKW30N60H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N60H3FKSA1 requirements.

6.How does Aetrix verify that IKW30N60H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N60H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N60H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N60H3FKSA1?

All IKW30N60H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N60H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N60H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW30N60H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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