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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N60TAFKSA1

Name: IKW30N60TAFKSA1
Brand: Infineon Technologies
SKU: IKW30N60TAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N60TAFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N60TAFKSA1.pdf

Description:: IGBT TRENCH/FS 600V 60A TO247-3

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Product details

Overview

IKW30N60TAFKSA1 from Infineon is a 600 V, 30 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO247-3 package, featuring 1.5 V typical V_CE(sat) at 25°C, 5 µs short-circuit withstand time, and 175°C maximum junction temperature-designed for frequency converters and UPS systems requiring high ruggedness and soft switching.

For engineers reviewing the IKW30N60TAFKSA1 datasheet, IKW30N60TAFKSA1 pinout, IKW30N60TAFKSA1 application, or IKW30N60TAFKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, anti-parallel diode reverse recovery performance (t_rr = 143 ns @ 25°C), gate charge (Q_Gate = 167 nC), thermal resistance (R_thJC = 0.80 K/W), and JEDEC1 qualification for industrial power conversion.

Technical Context

This IGBT combines TRENCHSTOP™ and Fieldstop technology to deliver tight parameter distribution, high switching speed, and temperature-stable V_CE(sat) with positive coefficient-enabling reliable operation up to 175°C junction temperature. Its integrated anti-parallel diode exhibits soft, fast recovery (Q_rr = 0.92 µC @ 25°C) and low EMI generation.

The device supports hard-switched inductive loads with 480 V DC-link voltage, 30 A rated current, and 2.1 mJ total switching energy at 175°C-optimized for 1–20 kHz PWM operation in motor drives and UPS inverters where low conduction loss and controlled turn-off tail current are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage compatible with 400 V AC input rectified systems and standard 600 V bus architectures.
I_C (continuous)	30 A @ T_C = 25°C - Rated collector current enabling 2.2 kW motor drive output with appropriate heatsinking.
V_CE(sat)	1.5 V (typ.) @ T_j = 25°C - Low conduction loss reduces power dissipation by ~25% vs. legacy 2.0 V IGBTs at same current.
t_SC	5 µs @ V_GE = 15 V, V_CC ≤ 400 V - Enables robust short-circuit protection without external desaturation detection circuitry.
Q_Gate	167 nC - Moderate gate charge allows efficient driving with standard 2 A gate drivers (e.g., 1ED020I12FA).
R_thJC (IGBT)	0.80 K/W - Enables 187 W power dissipation at 25°C case temperature, supporting compact thermal design.
t_rr (diode)	143 ns @ T_j = 25°C - Soft recovery minimizes voltage overshoot and snubber losses in bridge configurations.

Pinout & Package

PG-TO247-3 package: isolated metal tab, through-hole mounting, 3-terminal configuration with collector (C), gate (G), and emitter (E) terminals. Thermal path optimized via direct die-to-case interface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; carries full load current and must be routed with low-inductance layout.
Gate (G)	Control input for IGBT channel	Requires <±20 V rating; sensitive to noise-needs local 100 nF decoupling and controlled trace impedance.
Emiter (E)	Reference node for gate drive and current return	Shared emitter terminal for IGBT and integrated diode; forms common reference for gate driver ground and current sensing.

Key Features

Feature	Design Value
Emitter Controlled HE Diode	Soft, fast recovery (t_rr = 143 ns) with low Q_rr (0.92 µC) reduces commutation losses and EMI in H-bridge inverters.
TRENCHSTOP™ + Fieldstop Architecture	Enables 1.5 V V_CE(sat) with positive temperature coefficient-ensures current sharing in parallel operation.
JEDEC1 Qualification	Validated for frequency converter and UPS applications per JESD47 stress testing-supports industrial lifecycle requirements.
175°C Maximum Junction Temperature	Allows derating flexibility in high-ambient environments (e.g., enclosed UPS cabinets) without sacrificing power density.
Low EMI Generation	Controlled dV/dt during turn-off and soft diode recovery reduce conducted emissions-simplifies EMC filter design.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 3–5 kVA variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT half-bridge modules, operating at 4–16 kHz PWM frequency.

Use Value: 1.5 V V_CE(sat) reduces conduction loss by 1.35 W per device vs. 1.8 V alternatives, lowering heatsink size and system cost.

Use Scenario: Online double-conversion UPS inverter stage delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Output stage switch in full-bridge topology, handling bidirectional energy flow during battery backup mode.

Use Value: 5 µs short-circuit withstand time enables safe fault clearance without desaturation circuitry-reducing BOM count and layout complexity.

Solar Inverters (String Level)

Induction Heating Systems

Use Scenario: DC–AC stage in 3–6 kW string inverters interfacing PV arrays to grid.

IC Role / Device Role / Timing Role: Sine-wave synthesis switch in unipolar modulation scheme, requiring low switching loss and precise dead-time control.

Use Value: 167 nC gate charge enables use of low-cost 1.5 A gate drivers while maintaining <100 ns switching transition times.

Use Scenario: Resonant inverter stage in 2–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch controlling series-resonant tank current, demanding soft diode recovery to prevent hard-commutation failure.

Use Value: Emitter Controlled HE diode limits reverse recovery dv/dt to <600 V/µs-preventing spurious turn-on and shoot-through in high-dV/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650 V rating, higher V_CE(sat) (1.7 V typ.), slower t_rr (220 ns), R_thJC = 0.95 K/W	Better for 650 V bus designs; less suitable for 400 V systems needing minimal conduction loss	Select when higher voltage margin is required and thermal budget allows 0.15 K/W higher junction-to-case resistance.
IXYS IXGN30N60A3	Same 600 V/30 A rating but uses GenX3 process; V_CE(sat) = 1.6 V, Q_Gate = 145 nC, no integrated diode	Requires external ultrafast diode; lower gate charge eases drive but increases component count	Prefer when discrete diode selection is needed for custom recovery tuning or when gate drive power is constrained.

Compared with STGW30H65DFB and IXGN30N60A3, IKW30N60TAFKSA1 offers the lowest V_CE(sat), best integrated diode softness, and highest short-circuit ruggedness-making it optimal for thermally constrained 400 V industrial inverters where reliability and efficiency are prioritized over gate drive simplicity or voltage headroom.

Availability

IKW30N60TAFKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term industrial availability, and RoHS-compliant packaging.

Supply support for IKW30N60TAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT series targets high-efficiency, high-reliability power conversion-designed specifically for motor drives, UPS, and solar inverters where low conduction loss, rugged short-circuit behavior, and integrated diode performance are essential.

FAQ

What is the maximum allowable gate-emitter voltage for IKW30N60TAFKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended latch-up under high dV/dt conditions. Gate drive circuits must include clamping diodes or Zener networks to enforce these limits.

Does IKW30N60TAFKSA1 require an external freewheeling diode?

No-IKW30N60TAFKSA1 integrates a soft, fast-recovery Emitter Controlled HE diode rated for 45 A continuous forward current at T_C = 25°C. This eliminates need for external diodes in standard half-bridge or full-bridge topologies, reducing PCB area and parasitic inductance. External diodes are only required if specific recovery characteristics (e.g., ultra-low Q_rr) or higher current capability are needed.

How does junction temperature affect V_CE(sat) in IKW30N60TAFKSA1?

V_CE(sat) increases from 1.5 V (typ.) at 25°C to 1.9 V at 175°C, exhibiting a positive temperature coefficient. This ensures inherent current sharing in parallel configurations and prevents thermal runaway. The increase is linear and predictable-enabling accurate loss modeling across the full –40°C to +175°C operating range.

Is IKW30N60TAFKSA1 qualified for automotive applications?

No-IKW30N60TAFKSA1 is qualified per JEDEC1 for industrial applications (frequency converters, UPS), not AEC-Q101. It lacks automotive-specific screening (e.g., HTOL, ESD, mechanical shock) and is not listed in Infineon's automotive-grade product portfolio. For automotive traction or onboard charger use, consider Infineon's AIKQxxxx or hybrid-packaged automotive IGBTs.

IKW30N60TAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.05V @ 15V, 30A

Power - Max:: 187 W

Switching Energy:: 1.46mJ

Input Type:: Standard

Gate Charge:: 167 nC

Td (on/off) @ 25°C:: 23ns/254ns

Test Condition:: 400V, 30A, 10.6Ohm, 15V

Reverse Recovery Time (trr):: 143 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-21

IKW30N60TAFKSA1 FAQ

1.How can I place an order for IKW30N60TAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N60TAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N60TAFKSA1 reliable?

The price and inventory of IKW30N60TAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N60TAFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N60TAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N60TAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N60TAFKSA1?

IKW30N60TAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N60TAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N60TAFKSA1?

For technical support, including IKW30N60TAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N60TAFKSA1 requirements.

6.How does Aetrix verify that IKW30N60TAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N60TAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N60TAFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N60TAFKSA1?

All IKW30N60TAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N60TAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N60TAFKSA1 part is unused and in its original packaging.

Return procedure for IKW30N60TAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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