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Infineon Technologies IKW30N60TFKSA1

Part No.:
IKW30N60TFKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW30N60TFKSA1.pdf
Description:
IGBT TRENCH FS 600V 60A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,324

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Product details

Overview

IKW30N60TFKSA1 from Infineon is a 600 V, 30 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO247-3 package, designed for high-efficiency frequency converters and UPS systems. It delivers 1.5 V typical VCE(sat) at 25°C, 175°C maximum junction temperature, 5 µs short-circuit withstand time, and soft, fast-recovery diode behavior.

For engineers reviewing the IKW30N60TFKSA1 datasheet, IKW30N60TFKSA1 pinout, IKW30N60TFKSA1 application, or IKW30N60TFKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, diode reverse recovery charge (Qrr = 0.92 µC @ 25°C), gate charge (QG = 167 nC), thermal resistance (RthJC = 0.80 K/W), and SOA compliance at 600 V.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve tight parameter distribution, high ruggedness, and temperature-stable switching across -40°C to +175°C operation. Its positive VCE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The integrated anti-parallel diode uses Emitter Controlled HE design, delivering soft reverse recovery (trr = 143 ns @ 25°C) and low EMI generation. Dynamic performance is characterized under inductive load conditions (VCC = 400 V, IC = 30 A, rG = 10.6 Ω), with total switching energy of 1.46 mJ @ 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - supports DC bus voltages up to 400 V in 3-phase inverters with margin
IC30 A continuous - rated for sustained conduction at TC = 25°C
VCE(sat)1.5 V typ. @ 25°C - reduces conduction loss in motor drives and UPS output stages
tSC5 µs @ VGE = 15 V - enables robust short-circuit protection without external desaturation detection
QG167 nC - determines gate driver power requirement and switching speed control
RthJC0.80 K/W - defines thermal path efficiency from junction to heatsink interface
Qrr0.92 µC @ 25°C - quantifies diode recovery loss contribution during turn-on of complementary switch

Pinout & Package

PG-TO247-3 package with isolated mounting base, standard through-hole footprint, and 2.54 mm lead pitch. Thermal pad on collector terminal enables direct heatsink attachment.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Collector)Main power output nodeHigh-current path to DC bus; thermally connected to case for heat dissipation
Pin 2 (Gate)Control inputLow-impedance MOS-controlled terminal requiring <167 nC charge for full enhancement
Pin 3 (Emitter)Power return and referenceCommon return for IGBT and integrated diode; serves as source for gate drive reference

Key Features

FeatureDesign Value
Low VCE(sat) with positive tempco1.5 V @ 25°C, rising to 1.9 V @ 175°C - enables stable parallel operation without current imbalance
Soft, fast-recovery integrated diodetrr = 143 ns, Qrr = 0.92 µC @ 25°C - minimizes voltage overshoot and EMI during commutation
High ruggedness SOA90 A pulsed collector current, 600 V off-state - supports overload and transient conditions in industrial UPS
JEDEC1-qualified reliabilityQualified per JESD22-A108 for target applications - ensures long-term stability in mission-critical power systems
Pb-free RoHS-compliant platingMeets IPC-J-STD-020 reflow profile - compatible with standard lead-free assembly processes

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage converting DC bus to variable-frequency AC for induction motors in HVAC and pumps.

IC Role / Device Role / Timing Role: Main switching device in leg topology; handles 30 A RMS output current with 4–16 kHz PWM.

Use Value: Low VCE(sat) and soft diode reduce system losses by ~12% vs. legacy 600 V IGBTs, improving thermal margin at 110°C case temperature.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch operating in hard-switched mode with 5–10 kHz carrier frequency.

Use Value: 5 µs short-circuit withstand time allows time for controller-based fault response, eliminating need for auxiliary desat detection circuitry.

Solar String InvertersInduction Heating Systems

Use Scenario: DC-AC conversion stage in single-phase transformerless string inverters with 600 V DC input.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; conducts bidirectional current via integrated diode.

Use Value: Integrated Emitter Controlled HE diode eliminates discrete diode placement, reducing PCB area by 25% and parasitic inductance by 13 nH.

Use Scenario: Resonant half-bridge inverter driving series-LC tank at 20–100 kHz for cooktop and industrial heating.

IC Role / Device Role / Timing Role: Fast-switching power switch managing zero-voltage switching transitions.

Use Value: Low gate charge (167 nC) and high dV/dt immunity enable reliable ZVS operation up to 100 kHz with minimal gate driver loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW25N60T25 A rating, identical VCE(sat), RthJC = 0.85 K/WLower current handling limits peak power in 30 kVA UPS designsSelect when thermal budget allows lower conduction loss trade-off for cost reduction
FGH30N60LSD30 A, 600 V, but higher VCE(sat) = 1.8 V, no integrated diodeRequires external ultrafast diode, increasing layout complexity and recovery lossChoose only if discrete diode optimization is required for specific snubber or timing constraints

Compared with IKW25N60T and FGH30N60LSD, IKW30N60TFKSA1 offers superior thermal performance (0.80 K/W vs. 0.85 K/W), built-in diode integration, and tighter VCE(sat) distribution-making it optimal for space-constrained, high-reliability 30 A inverter legs where board area and thermal management are critical.

Availability

IKW30N60TFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply and long-lifecycle support.

Supply support for IKW30N60TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT product line targets high-efficiency, high-reliability power conversion in 600 V applications-including motor drives, UPS, and solar inverters-by combining low conduction loss, fast switching, and rugged short-circuit capability.

FAQ

What is the maximum allowable gate-emitter voltage for IKW30N60TFKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for saturation and −5 V to −10 V for fast, noise-immune turn-off. Exceeding ±20 V-even momentarily-can cause irreversible gate leakage or threshold shift.

Does IKW30N60TFKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery Emitter Controlled HE diode rated for 45 A DC at TC = 25°C. This diode is co-packaged and electrically matched to the IGBT, eliminating need for external diodes in standard inverter leg topologies. Its trr = 143 ns and Qrr = 0.92 µC are fully characterized and validated for synchronous rectification.

How does junction temperature affect VCE(sat) in IKW30N60TFKSA1?

VCE(sat) increases linearly with junction temperature due to its positive temperature coefficient: 1.5 V typ. at 25°C, 1.9 V at 175°C. This behavior improves current sharing in parallel configurations and enhances thermal runaway immunity-unlike negative-coefficient devices that require active balancing circuits.

Can IKW30N60TFKSA1 be used in zero-voltage switching (ZVS) topologies?

Yes. With 167 nC gate charge, 50 pF Crss, and soft diode recovery (trr = 143 ns), it supports ZVS in resonant half-bridge and LLC converters up to 100 kHz. Successful implementation requires matching gate resistor (rG) to driver strength and verifying dead-time margins using measured turn-off delay (td(off) = 254 ns @ 25°C).

IKW30N60TFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 30A
Power - Max:
187 W
Switching Energy:
1.46mJ
Input Type:
Standard
Gate Charge:
167 nC
Td (on/off) @ 25°C:
23ns/254ns
Test Condition:
400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr):
143 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IKW30N60TFKSA1 FAQ

1.How can I place an order for IKW30N60TFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N60TFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N60TFKSA1 reliable?

The price and inventory of IKW30N60TFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N60TFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N60TFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N60TFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N60TFKSA1?

IKW30N60TFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N60TFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N60TFKSA1?

For technical support, including IKW30N60TFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N60TFKSA1 requirements.

6.How does Aetrix verify that IKW30N60TFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N60TFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N60TFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N60TFKSA1?

All IKW30N60TFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N60TFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N60TFKSA1 part is unused and in its original packaging.

Return procedure for IKW30N60TFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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