Infineon Technologies IKW30N65EL5XKSA1

Overview

IKW30N65EL5XKSA1 from Infineon is a 650V, 30A low-V_CE(sat) TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.05V V_CE(sat) at 30A and 25°C, supports 175°C maximum junction temperature, and features 168nC gate charge and 0.66K/W IGBT junction-to-case thermal resistance. It is designed for high-efficiency industrial power conversion stages in inverters and UPS systems.

For engineers reviewing the IKW30N65EL5XKSA1 datasheet, IKW30N65EL5XKSA1 pinout, IKW30N65EL5XKSA1 application, or IKW30N65EL5XKSA1 equivalent, key selection criteria include conduction-loss vs. switching-loss tradeoff, diode reverse recovery performance (Q_rr = 0.91µC at 25°C), thermal robustness under pulsed load, and compatibility with 15V gate drive in hard-switched topologies.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure optimized for low saturation voltage and controlled tail current, enabling reduced conduction losses without excessive switching energy penalty. Its integrated RAPID 1 diode exhibits soft reverse recovery (trr = 87ns, dirr/dt = −1250 A/µs) and low Q_rr, minimizing voltage overshoot and EMI in bridge-leg configurations.

The device operates across −40°C to +175°C junction range and is rated for 650V DC blocking with 120A pulsed collector current capability. Thermal design is supported by separate IGBT and diode junction-to-case resistances (0.66K/W and 0.95K/W), allowing independent heatsinking analysis for each die in the DuoPack configuration.

Key Specifications

Pinout & Package

PG-TO247-3 package: isolated mounting base, through-hole mounting, 3-terminal configuration with collector (C), gate (G), and emitter (E) leads. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter (standard TO247 pinout). The package provides low-inductance emitter path and mechanical robustness for high-current power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW40N65ES5XKSA1 and FGH40N60UFDTU, the IKW30N65EL5XKSA1 offers optimal balance of conduction efficiency, integrated diode functionality, and thermal margin for 30A-class industrial inverters-making it ideal where board space, BOM count, and reliability under thermal cycling are critical.

Availability

IKW30N65EL5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar photovoltaic inverters, and industrial welding machines requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IKW30N65EL5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability industrial power conversion-including solar inverters, UPS, and motor drives-by optimizing the conduction–switching loss tradeoff while maintaining ruggedness and thermal resilience.

FAQ

What is the maximum recommended gate-emitter voltage for continuous operation?

The IKW30N65EL5XKSA1 has a continuous gate-emitter voltage rating of ±20V. Transient conditions allow ±30V for ≤10µs with duty cycle <1%. Exceeding ±20V continuously risks gate oxide degradation and threshold voltage shift. Gate drive circuits must include clamping (e.g., Zener diodes) to maintain safe bias within this limit.

Can this IGBT be used in parallel configurations?

Yes, the IKW30N65EL5XKSA1 supports paralleling due to its positive temperature coefficient of V_CE(sat), which promotes current sharing. Successful implementation requires matched gate drive impedance (≤1Ω difference), symmetrical PCB layout, and individual gate resistors (RG(on)/RG(off) ≥ 5Ω) to dampen oscillations and ensure simultaneous turn-on/turn-off.

What is the significance of the "L5" suffix in the part number?

The "L5" denotes Infineon's fifth-generation low-V_CE(sat) TRENCHSTOP™ technology, characterized by improved trench depth/profile, optimized field-stop layer, and refined doping gradients. This generation achieves lower saturation voltage without increasing switching losses-verified by measured E_on/E_off values across temperature and current ranges in the official datasheet.

Does the integrated diode require separate gate control or snubbing?

No-the RAPID 1 diode is uncontrolled and shares the same package as the IGBT but has no gate terminal. It operates passively during freewheeling. Snubbing is not required if layout inductance is minimized (LE = 13nH) and gate drive is properly damped; however, RC snubbers may still be used on high-di/dt applications like welding to suppress voltage spikes from stray inductance.