Infineon Technologies IKW30N65ES5XKSA1

Overview

IKW30N65ES5XKSA1 from Infineon is a 650 V, 30 A TRENCHSTOP™ 5 high-speed soft-switching IGBT co-packed with a full-current-rated RAPID 1 fast antiparallel diode in PG-TO247-3 package. It delivers V_CE(sat) = 1.35 V at 30 A/15 V_GE, t_fall = 30 ns (25°C), and Q_G = 70 nC, enabling efficient operation in resonant and high-frequency hard-switching converters up to 100 kHz.

For engineers reviewing the IKW30N65ES5XKSA1 datasheet, IKW30N65ES5XKSA1 pinout, IKW30N65ES5XKSA1 application, or IKW30N65ES5XKSA1 equivalent, key selection criteria include its low switching losses (E_off = 0.32 mJ @ 30 A), soft reverse recovery (trr = 75 ns, Qrr = 0.83 µC), and 175°C max junction temperature for thermal robustness in UPS and welding inverters.

Technical Context

This IGBT employs TRENCHSTOP™ 5 silicon technology with optimized carrier lifetime control and field-stop design, delivering reduced tail current and lower E_ts (0.88 mJ @ 30 A) versus prior generations. Its integrated RAPID 1 diode features soft recovery (Irrm = 18 A, dirr/dt = 900 A/µs) and low VF (1.45 V @ 30 A, 25°C), minimizing commutation stress and voltage overshoot.

The device is rated for 650 V V_CE, operates up to 175°C junction temperature, and supports gate drive with ±20 V V_GE range. Thermal resistance R_th(j-c) is 0.8 K/W (IGBT) and 1.0 K/W (diode), enabling high-power density designs when mounted on heatsinks with controlled thermal interface resistance.

Key Specifications

Pinout & Package

IKW30N65ES5XKSA1 uses the PG-TO247-3 package with isolated collector tab (backside), enabling direct heatsink mounting. The plastic body provides creepage/clearance compliant with industrial insulation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW25N65ES5 and IKW40N65ES5, the IKW30N65ES5XKSA1 offers optimal balance of conduction loss, switching speed, and thermal capability for 3–4 kW industrial inverters-avoiding unnecessary cost or gate drive overhead while maintaining 175°C reliability.

Availability

IKW30N65ES5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, resonant DC-DC converters, and mid-frequency motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKW30N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability power conversion in industrial motor drives, UPS, and welding equipment-designed specifically for soft-switching topologies and thermally demanding environments.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 13 Ω for characterization at 100 kHz switching. For reliable turn-off with margin against Miller-induced false triggering, Infineon recommends RG(off) ≤ 15 Ω with gate drive capable of sinking ≥2 A peak. Higher values increase td(off) and Eoff disproportionately above 20 Ω due to reduced dVCE/dt control.

Can IKW30N65ES5XKSA1 replace IKW30N65H5 in existing designs?

Yes-IKW30N65ES5XKSA1 is a direct drop-in replacement for IKW30N65H5, sharing identical PG-TO247-3 pinout, 650 V rating, and 30 A current capability. Key improvements include 15% lower VCEsat (1.35 V vs. 1.55 V), 20% lower QG, and enhanced softness in the co-packed diode, enabling immediate efficiency gains without layout changes.

Is the backside collector electrically isolated from the case mounting surface?

No-the backside collector metal tab is electrically connected to the C pin and serves as the primary collector terminal. It must be mounted to an insulated heatsink or use isolating thermal pads. Direct mounting to grounded metal chassis without isolation will short the collector to ground and destroy the device.

What is the typical thermal resistance from junction to case for the integrated diode?

The diode's junction-to-case thermal resistance Rth(j-c) is 1.0 K/W, measured at the emitter pin location per Infineon's test methodology. This value assumes proper mounting torque (0.6 Nm for M3 screws) and thermal interface material with ≤0.1 K·cm²/W resistance. Diode heating contributes independently to total case temperature rise alongside IGBT dissipation.