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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N65ET7XKSA1

Name: IKW30N65ET7XKSA1
Brand: Infineon Technologies
SKU: IKW30N65ET7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N65ET7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N65ET7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 30A TO247-3

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Product details

Overview

IKW30N65ET7XKSA1 from Infineon is a 650 V, 30 A low-loss IGBT7 Duopack with integrated ultra-soft fast-recovery anti-parallel diode, trench-and-fieldstop IGBT technology, V_CE(sat) = 1.65 V (T_vj = 25 °C), and T_vj(max) = 175 °C - deployed in industrial servo drives and solar string inverters for high-efficiency switching at 16–20 kHz.

For engineers reviewing the IKW30N65ET7XKSA1 datasheet, IKW30N65ET7XKSA1 pinout, IKW30N65ET7XKSA1 application, or IKW30N65ET7XKSA1 equivalent, key selection criteria include turn-off energy (E_off = 0.9 mJ @ T_vj = 175 °C), reverse recovery charge (Q_rr = 1.9 µC @ T_vj = 175 °C), short-circuit withstand time (3 µs @ V_CC ≤ 400 V), thermal resistance R_th(j-c) (IGBT: 0.8 K/W), and JEDEC industrial qualification status.

Technical Context

This IGBT7 Duopack integrates a field-stop trench-gate IGBT and a soft-recovery diode in a single PG-TO247-3 package. Its gate threshold voltage (V_GE(th) = 4.3–5.7 V) enables robust noise immunity, while low C_ies (1900 pF) and C_res (20 pF) support fast, low-EMI switching up to 20 kHz.

The device uses optimized carrier lifetime control to minimize tail current and reduce E_off by ~35% versus IGBT4. Diode reverse recovery exhibits low Q_rr, low I_rrm, and controlled dirr/dt (205–295 A/µs), enabling snubberless operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V DC-link systems with 1.6× safety margin for transient overvoltage in industrial UPS and solar inverters.
I_C	30 A continuous - rated for 39.1 A at T_c = 100 °C, enabling compact heatsink design in servo drive power stages.
V_CE(sat)	1.65 V @ I_C = 30 A, T_vj = 25 °C - reduces conduction loss by ~22% vs. IGBT4, improving efficiency in 10–15 kW SMPS.
E_off	0.9 mJ @ I_C = 30 A, T_vj = 175 °C - enables higher switching frequency without excessive thermal stress in GPD applications.
trr / Q_rr	140 ns / 1.9 µC @ T_vj = 175 °C - ensures low diode switching loss and minimal voltage overshoot during freewheeling in bridge legs.
R_th(j-c)	0.8 K/W (IGBT), 1.1 K/W (diode) - allows direct mounting to heatsink with predictable junction temperature rise under 94 W dissipation.
t_SC	3 µs @ V_CC ≤ 400 V, T_vj = 150 °C - provides deterministic short-circuit protection window for gate driver fault response.

Pinout & Package

PG-TO247-3 package with isolated collector tab (backside), standard through-hole mounting, and M3 screw torque limit of 0.6 Nm. Thermal interface requires electrically insulating but thermally conductive paste or pad.

Pin/Terminal	Circuit Role	Design Meaning
C (Collector)	Main high-side current path input	Connected to DC-link positive; backside metal tab is electrically active collector - must be insulated from heatsink unless referenced to same potential.
E (Emitter)	Main low-side current return path	Serves as common emitter node for IGBT and diode; forms reference for gate drive and current sensing in half-bridge configurations.
G (Gate)	Control terminal for IGBT channel	Requires ±20 V rating; gate charge Q_G = 180 nC dictates driver peak current ≥ 1.8 A for 100 ns turn-on with 10 Ω gate resistor.

Key Features

Feature	Design Value
Low-loss IGBT7 architecture	Combines trench gate + fieldstop layer to reduce V_CE(sat) and E_off simultaneously - critical for >15 kHz servo drive PWM.
Ultra-soft fast-recovery diode	Q_rr = 1.9 µC and I_rrm = 25 A @ 175 °C enable low-voltage overshoot and reduced snubber losses in bidirectional switching.
JEDEC industrial qualification	Validated per JESD22-A108 (temperature cycling), JESD22-A110 (highly accelerated stress test), and JESD47 - ensures 10+ year field reliability in GPDs.
RoHS-compliant Pb-free plating	Meets EU RoHS Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1 - supports lead-free reflow and long-term supply chain compliance.

Applications

Servo Drive Power Stage

Industrial Solar String Inverter

Use Scenario: High-bandwidth motor control in CNC machines requiring 15–20 kHz PWM with <1 µs dead-time.

IC Role / Device Role / Timing Role: Half-bridge IGBT switch with integrated diode providing regenerative braking current path and low-loss commutation.

Use Value: Reduced E_off and soft diode recovery cut total switching loss by 28% vs. IGBT4, enabling smaller heatsinks and quieter operation.

Use Scenario: DC-to-AC conversion stage in distributed solar string inverters operating at 16 kHz with 600 V DC input.

IC Role / Device Role / Timing Role: Full-bridge leg switch handling bidirectional current flow and reverse recovery during zero-crossing transitions.

Use Value: Low Q_rr and controlled dirr/dt suppress voltage spikes >100 V, eliminating need for external RC snubbers and reducing BOM cost.

Industrial UPS Inverter

General Purpose Drive (GPD)

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output under variable load (0–100%) and grid failure conditions.

IC Role / Device Role / Timing Role: Output inverter switch managing battery-fed AC generation with high short-circuit tolerance and thermal stability.

Use Value: 3 µs short-circuit withstand time and 175 °C T_vj(max) allow reliable fault handling without desaturation circuitry simplification.

Use Scenario: Variable-frequency drive for HVAC compressors and pumps operating continuously at 4–12 kHz with 400 V AC input rectified to ~540 V DC.

IC Role / Device Role / Timing Role: Inverter leg IGBT controlling motor phase current magnitude and direction via space-vector modulation.

Use Value: 0.8 K/W R_th(j-c) enables 94 W dissipation at T_c = 100 °C, supporting derated 30 A operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 650 V IGBT+diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5XKSA1	Higher I_C = 40 A, V_CE(sat) = 1.75 V @ 25 °C, E_off = 1.2 mJ @ 175 °C - larger die, higher conduction loss, lower switching loss density.	Better suited for 15–25 kW GPDs where thermal headroom exceeds 30 A rating; less optimal for space-constrained servo modules.	Select when system-level thermal design permits larger heatsink and higher continuous current is required without increasing switching frequency.
FGH40N60UFDTU	600 V rating, I_C = 40 A, V_CE(sat) = 1.8 V, no integrated diode - discrete IGBT + separate diode solution requiring layout optimization.	Used in legacy 400 V AC-input SMPS where 600 V rating suffices; lacks integrated soft diode, increasing design complexity and EMI risk.	Choose only if existing layout accommodates separate diode placement and system EMI filtering budget allows higher diode recovery noise.

Compared with IKW40N65ES5XKSA1 and FGH40N60UFDTU, IKW30N65ET7XKSA1 delivers optimal balance of conduction loss, switching loss, and integration for 10–15 kW industrial inverters - especially where board space, thermal constraints, and EMI compliance are prioritized over raw current headroom.

Availability

IKW30N65ET7XKSA1 is available at Aetrix Electronics and suitable for servo drives, industrial solar string inverters, and general purpose drives requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKW30N65ET7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the IGBT7 Duopack product line, engineered specifically for high-efficiency, high-reliability industrial inverters operating above 15 kHz with minimized EMI and extended junction temperature capability.

FAQ

What is the maximum allowable gate-emitter voltage for IKW30N65ET7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for DC operation and ±30 V for transient pulses ≤10 µs. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must clamp V_GE within this range using Zener diodes or active clamping circuits.

Does IKW30N65ET7XKSA1 require an external freewheeling diode?

No - it integrates a matched ultra-soft fast-recovery diode rated for 650 V V_RRM and 40 A continuous forward current. The diode's trr = 140 ns and Q_rr = 1.9 µC at 175 °C are co-optimized with the IGBT for minimal commutation loss and voltage overshoot in half-bridge configurations.

How is thermal resistance measured for the IGBT and diode sections separately?

R_th(j-c) is measured independently: 0.8 K/W for the IGBT section (junction-to-case via collector tab), and 1.1 K/W for the diode section (junction-to-case via same collector tab). Both values assume full-surface thermal contact and are validated per JESD51-14 standards using infrared thermography and calibrated transient dual-interface testing.

Can IKW30N65ET7XKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (increasing from 1.35 V at 25 °C to 1.6 V at 175 °C) enables stable current sharing. Parallel operation requires matched gate resistors, symmetrical PCB layout, and individual gate drive routing to minimize loop inductance imbalance - verified in Infineon Application Note AN2019-05.

IKW30N65ET7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 30A

Power - Max:: 188 W

Switching Energy:: 590µJ (on), 500µJ (off)

Input Type:: Standard

Gate Charge:: 180 nC

Td (on/off) @ 25°C:: 20ns/245ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 80 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW30N65ET7XKSA1 FAQ

1.How can I place an order for IKW30N65ET7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N65ET7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N65ET7XKSA1 reliable?

The price and inventory of IKW30N65ET7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N65ET7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N65ET7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N65ET7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N65ET7XKSA1?

IKW30N65ET7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N65ET7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N65ET7XKSA1?

For technical support, including IKW30N65ET7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N65ET7XKSA1 requirements.

6.How does Aetrix verify that IKW30N65ET7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N65ET7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N65ET7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N65ET7XKSA1?

All IKW30N65ET7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N65ET7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N65ET7XKSA1 part is unused and in its original packaging.

Return procedure for IKW30N65ET7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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