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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N65H5XKSA1

Name: IKW30N65H5XKSA1
Brand: Infineon Technologies
SKU: IKW30N65H5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N65H5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N65H5XKSA1.pdf

Description:: IGBT TRENCH 650V 55A TO247-3

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Product details

Overview

IKW30N65H5XKSA1 from Infineon is a 650V, 30A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.65V V_CE(sat) at 30A/25°C, 70nC gate charge, and 175°C max junction temperature, enabling efficient hard-switching in solar inverters and UPS systems.

For engineers reviewing the IKW30N65H5XKSA1 datasheet, IKW30N65H5XKSA1 pinout, IKW30N65H5XKSA1 application, or IKW30N65H5XKSA1 equivalent, key selection criteria include switching energy (0.13–0.57 mJ), diode reverse recovery performance (Q_rr = 0.22–0.93 µC), thermal resistance (R_th(j-c) = 0.80 K/W), and JEDEC-qualified industrial reliability.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with optimized carrier lifetime control for low conduction and switching losses. Its integrated RAPID 1 diode features soft recovery (dI_rr/dt ≤ –370 A/µs) and low Q_rr, minimizing voltage overshoot and EMI in high-frequency converters.

The device operates across –40°C to +175°C junction range with ±20V gate rating and supports gate drive voltages ≥7.5V for linear SOA compliance. Thermal design is enabled by separate IGBT and diode junction-to-case resistances (0.80 K/W and 2.00 K/W respectively).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650V in solar and UPS topologies without derating.
I_C	30 A continuous - Rated collector current at T_C = 25°C; supports 15A operation at T_C = 100°C per datasheet derating curve.
V_CE(sat)	1.65 V @ 30A/25°C - Low saturation voltage reduces conduction loss and heatsink requirements in 16–100 kHz converters.
Q_G	70 nC - Enables fast turn-on/off with moderate gate driver power (e.g., 1–2 W at 20 kHz).
E_off	0.04–0.16 mJ - Low turn-off energy enables high-efficiency operation in resonant and hard-switched SMPS designs.
trr / Q_rr	44 ns / 0.22 µC @ 5A - Fast, soft diode recovery minimizes snubber stress and improves system efficiency in bidirectional power stages.
T_vj(max)	175 °C - Extended junction temperature allows higher power density and reduced thermal margining in compact enclosures.

Pinout & Package

PG-TO247-3 package: isolated mounting base, single-row 3-pin through-hole outline with tab-connected collector. Standard lead-free plating, RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	IGBT emitter terminal	Low-inductance connection point for main power return path; referenced to gate drive ground in half-bridge layouts.
Pin 2 (Collector)	IGBT collector terminal	Internally bonded to metal tab; electrically connected to heatsink-requires insulating thermal interface if heatsink is grounded.
Pin 3 (Gate)	IGBT gate control input	High-impedance MOS-controlled terminal; requires <100 nA leakage drive and robust ESD protection per JEDEC JESD22-A114.

Key Features

Feature	Design Value
Integrated RAPID 1 diode	Soft reverse recovery (dI_rr/dt ≤ –370 A/µs) eliminates voltage spikes and reduces snubber component count in bridge legs.
TRENCHSTOP™ 5 technology	Optimized carrier lifetime yields best-in-class trade-off between V_CE(sat) (1.65 V) and E_off (0.04 mJ @ 5A), reducing total loss in 20–50 kHz applications.
JEDEC qualification	Validated for industrial power control per AEC-Q101 stress test conditions, supporting 15+ year field reliability in solar and UPS deployments.
175°C junction rating	Enables 25% higher power density vs. 150°C-rated IGBTs under identical thermal constraints, lowering system size and cost.

Applications

Solar String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC–AC conversion stage in 3–10 kW string inverters operating at 16–30 kHz switching frequency with SiC-compatible gate drivers.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg; handles bidirectional current via integrated diode during freewheeling.

Use Value: Low Q_rr (0.22 µC) and soft recovery reduce diode-induced voltage overshoot, allowing use of lower-voltage-rated DC-link capacitors and smaller EMI filters.

Use Scenario: Online double-conversion UPS with battery backup, requiring zero-transfer-time AC output and high efficiency at partial load.

IC Role / Device Role / Timing Role: Inverter-stage switch in 20–50 kHz PWM topology; conducts full load current during normal operation and battery discharge mode.

Use Value: 175°C T_vj(max) and 0.80 K/W R_th(j-c) enable stable 30A operation with passive cooling, eliminating fan dependency in compact rack-mount units.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Inverter section of IGBT-based arc welding machines delivering 100–500 A output with dynamic current regulation at 20–40 kHz.

IC Role / Device Role / Timing Role: Primary power switch in full-bridge configuration; subjected to high di/dt (>1 kA/µs) and repetitive short-circuit stress.

Use Value: High pulsed current rating (I_Cpuls = 90 A) and SOA compliance up to 90 A at V_CE ≤ 650 V ensure robustness against arc ignition transients and load dumps.

Use Scenario: Resonant inverter driving induction coils at 20–100 kHz for metal heating in forging and brazing equipment.

IC Role / Device Role / Timing Role: Half-bridge switch handling high-frequency sinusoidal current; relies on integrated diode for resonant current commutation.

Use Value: Low E_ts (0.13 mJ @ 5A) and minimal tail current reduce switching loss by >35% vs. previous-generation IGBTs, improving thermal management at 50+ kW output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65H5	Higher I_C (40A), same V_CE (650V), slightly higher Q_G (90 nC), identical RAPID 1 diode	Supports higher continuous current in larger UPS or welder platforms; requires larger gate driver and heatsink	Select when system peak current exceeds 30A but layout space permits larger TO247 footprint
FGH40N60UFD	600V rating, 40A I_C, UFS diode (not RAPID 1), higher V_CE(sat) (1.8 V), lower E_off (0.03 mJ)	Better suited for 400V DC bus systems (e.g., EV chargers); lacks soft recovery for high-di/dt inductive loads	Prefer only in 600V-class systems where diode softness is secondary to ultra-low E_off

Compared with IKW40N65H5 and FGH40N60UFD, IKW30N65H5XKSA1 offers optimal balance of current rating, soft diode behavior, and thermal capability for 650V solar and UPS designs where board space and gate drive simplicity are constrained.

Availability

IKW30N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term industrial lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW30N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The TRENCHSTOP™ 5 IGBT series targets high-efficiency, high-reliability industrial power conversion-designed specifically for solar inverters, UPS, and welding equipment demanding low-loss switching and extended thermal operation.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) = 23 Ω for characterization at 15 V gate drive. For reliable turn-off under worst-case conditions (T_vj = 175°C, I_C = 30 A), R_G(off) should not exceed 33 Ω to maintain td(off) ≤ 250 ns and prevent shoot-through in bridge configurations.

Does IKW30N65H5XKSA1 require negative gate voltage for safe operation?

No. The device is rated for V_GE = ±20 V DC and operates reliably with 0 V / +15 V gate drive. Negative bias (e.g., –5 V) is optional and used only to improve noise immunity in high-dV/dt environments-not required for basic functionality or SOA compliance.

Can the integrated diode replace an external fast recovery diode in a buck converter?

Yes-the RAPID 1 diode is rated for 30 A continuous forward current at T_C = 25°C and exhibits soft recovery (trr = 44 ns, Q_rr = 0.22 µC). It is qualified for freewheeling in buck, boost, and inverter topologies up to 100 kHz without external diode supplementation.

Is IKW30N65H5XKSA1 pin-compatible with earlier IKW30N65H3 variants?

Yes-both use identical PG-TO247-3 mechanical footprint and pinout (E-C-G). However, H5 offers 30% lower E_off and improved diode softness; gate drive timing and snubber values may require minor optimization due to faster switching transitions.

IKW30N65H5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 188 W

Switching Energy:: 280µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 70 nC

Td (on/off) @ 25°C:: 20ns/190ns

Test Condition:: 400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW30N65H5XKSA1 FAQ

1.How can I place an order for IKW30N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N65H5XKSA1 reliable?

The price and inventory of IKW30N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N65H5XKSA1?

IKW30N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N65H5XKSA1?

For technical support, including IKW30N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N65H5XKSA1 requirements.

6.How does Aetrix verify that IKW30N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N65H5XKSA1?

All IKW30N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IKW30N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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