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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N65NL5XKSA1

Name: IKW30N65NL5XKSA1
Brand: Infineon Technologies
SKU: IKW30N65NL5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N65NL5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N65NL5XKSA1.pdf

Description:: IGBT 650V 85A TO247-3

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Product details

Overview

IKW30N65NL5XKSA1 from Infineon is a 650V, 30A low-V_CE(sat) TRENCHSTOP™ 5 IGBT copacked with a RAPID 2 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.05V V_CE(sat) at 30A/25°C, 175°C max junction temperature, 168 nC gate charge, and 59 ns turn-on delay-optimized for high-efficiency industrial power conversion stages in solar inverters and UPS systems.

For engineers reviewing the IKW30N65NL5XKSA1 datasheet, IKW30N65NL5XKSA1 pinout, IKW30N65NL5XKSA1 application, or IKW30N65NL5XKSA1 equivalent, key selection criteria include conduction-loss vs. switching-loss tradeoff at 150°C, diode reverse recovery charge (0.65 µC @ 150°C), thermal resistance (R_th(j-c) = 0.66 K/W), and JEDEC-qualified reliability for industrial power control.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with optimized carrier lifetime control to achieve best-in-class conduction–switching loss balance. Its integrated RAPID 2 diode features soft reverse recovery (trr = 58 ns, Qrr = 0.65 µC @ 150°C) and low peak reverse recovery current (Irrm = 24 A).

The device operates with ±20 V DC and ±30 V transient gate-emitter voltage ratings, supports 120 A pulsed collector current, and maintains stable V_CE(sat) across –40°C to +175°C junction range-enabling robust operation in thermally demanding inverter half-bridges and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in single-phase and three-phase inverter topologies.
I_C	30 A continuous - Rated collector current at T_C = 25°C; derates to 62 A at T_C = 100°C per thermal limits.
V_CE(sat)	1.05 V @ 30 A, 25°C - Enables <1.1 W conduction loss per device at rated current, reducing heatsink requirements.
Q_G	168 nC - Low gate charge allows efficient driving with standard gate drivers (e.g., 1ED020I12FA) without excessive Miller effect.
R_th(j-c)	0.66 K/W - Junction-to-case thermal resistance enables direct mounting on heatsinks with predictable thermal margin.
t_d(off)	283 ns @ 25°C - Turn-off delay time defines minimum dead-time setting in complementary switching to prevent shoot-through.
E_off	1.35 mJ @ 25°C - Total turn-off energy determines snubber sizing and switching loss contribution at 16 kHz PWM frequency.

Pinout & Package

PG-TO247-3 package: isolated metal tab (collector), 3-pin through-hole outline with 2.54 mm lead pitch; screw-mount compatible (M3, 0.6 Nm torque); not recommended for surface mount.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Collector (C)	Main high-side current path; electrically connected to metal tab-requires isolation from heatsink unless system ground referenced.
Pin 2 (center)	Gate (G)	Control input; sensitive to ESD and dv/dt coupling-requires low-inductance gate loop and RC snubber if needed.
Pin 3 (right)	Emitter (E)	Power return path for IGBT and diode; serves as reference for gate drive; must be low-impedance to minimize common-source inductance.

Key Features

Feature	Design Value
Low V_CE(sat) L5 technology	1.05 V at 30 A/25°C reduces conduction losses by ~25% vs. prior TRENCHSTOP™ 4 generation under identical conditions.
RAPID 2 antiparallel diode	Soft reverse recovery (dirr/dt = –4970 A/µs @ 150°C) minimizes voltage overshoot and EMI during freewheeling in inductive loads.
JEDEC qualification	Validated for industrial power applications per JESD47 stress testing-ensures long-term reliability in 24/7 operation.
175°C maximum junction temperature	Enables higher power density designs and extended thermal headroom in compact enclosures without forced air cooling.
Pb-free and RoHS compliant	Meets EU Directive 2011/65/EU and IPC/JEDEC J-STD-609B Class 3 moisture sensitivity level (MSL 1).

Applications

Solar Photovoltaic Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC–AC conversion stage in string inverters operating at 16–20 kHz switching frequency with 400–600 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch in two-level or three-level NPC topology; handles bidirectional current via integrated diode during freewheeling.

Use Value: Low V_CE(sat) and soft diode recovery reduce total system losses by ≥1.2% efficiency gain versus legacy 650 V IGBTs at 50% load.

Use Scenario: Online double-conversion UPS output stage delivering clean 50/60 Hz sine wave under variable load (0–100%) and battery backup mode.

IC Role / Device Role / Timing Role: Inverter leg switch with fast, low-loss commutation; diode conducts regenerative energy during line-to-battery transfer.

Use Value: 175°C rating allows sustained 100% load operation at 40°C ambient without derating-critical for data center UPS thermal management.

Industrial Welding Machines

Motor Drives for HVAC Compressors

Use Scenario: Primary inverter in IGBT-based inverter welders generating 10–20 kHz square-wave output for precise arc control and spatter reduction.

IC Role / Device Role / Timing Role: Main power switch in full-bridge configuration; withstands repetitive 120 A pulsed currents during short-circuit events.

Use Value: 120 A pulsed current rating and 0.66 K/W R_th(j-c) support >300 ms overload capability without thermal shutdown.

Use Scenario: Variable-frequency drive (VFD) output stage controlling permanent magnet synchronous motors in rooftop HVAC units.

IC Role / Device Role / Timing Role: Half-bridge leg element; integrated diode provides low-loss regeneration during deceleration and braking.

Use Value: RAPID 2 diode's 0.65 µC Q_rr at 150°C cuts regenerative switching loss by 35% vs. standard FRD, improving partial-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + diode DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW25N65ES5XKSA1	25 A rated current, 1.15 V V_CE(sat), 135 nC Q_G, same 650 V/175°C rating	Lower conduction loss at ≤20 A; reduced switching loss due to lower Q_G; less suitable for 30 A continuous duty	Select when system peak current stays below 25 A and gate drive strength is limited.
IKW40N65ES5XKSA1	40 A rated current, 1.10 V V_CE(sat), 215 nC Q_G, same package and voltage rating	Higher current headroom and thermal margin; increased switching loss due to higher Q_G; requires stronger gate driver	Select when future-proofing for 35–40 A design margin or operating at elevated ambient temperatures (>60°C).

Compared with IKW25N65ES5XKSA1 and IKW40N65ES5XKSA1, IKW30N65NL5XKSA1 offers optimal balance of conduction loss, switching loss, and thermal capability for 30 A nominal industrial inverter legs-avoiding overdesign penalty while maintaining sufficient margin for transient overloads.

Availability

IKW30N65NL5XKSA1 is available at Aetrix Electronics and suitable for solar photovoltaic inverters, uninterruptible power supplies, and industrial welding machines requiring stable component supply, JEDEC-qualified reliability, and long-lifecycle availability.

Supply support for IKW30N65NL5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's TRENCHSTOP™ 5 Low V_CE(sat) series-designed specifically for high-efficiency, high-reliability industrial power conversion where thermal robustness and soft switching behavior are critical.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKW30N65NL5XKSA1 has a continuous gate-emitter voltage rating of ±20 V. Exceeding this value risks permanent gate oxide damage. Transient spikes up to ±30 V are allowed only for durations ≤10 µs and duty cycle <1%, per datasheet Section 4 (Maximum Ratings). Gate driver circuits must include clamping (e.g., Zener diodes) to enforce this limit under fault conditions.

How does the integrated RAPID 2 diode improve system-level EMI performance?

The RAPID 2 diode exhibits soft reverse recovery with controlled dirr/dt (–4970 A/µs max at 150°C), minimizing high-frequency ringing and voltage overshoot during turn-off. This directly reduces conducted and radiated EMI, easing compliance with EN 55011 Class A/B and lowering filter component cost in inverter output stages.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.04 V @ 150°C vs. 1.05 V @ 25°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and thermal coupling. Infineon Application Note AN2015-05 provides layout guidelines and gate resistor recommendations for 2–4 device paralleling.

What is the recommended gate resistor value for 16 kHz operation with 1ED020I12FA driver?

For 16 kHz PWM with 1ED020I12FA, Infineon recommends R_G(on) = 23 Ω and R_G(off) = 10 Ω (per datasheet test condition). This balances switching speed (td(off) = 283 ns) and voltage overshoot (<10% of V_CE). Lower R_G increases E_off and dv/dt stress; higher values increase switching losses and thermal stress.

IKW30N65NL5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 85 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.35V @ 15V, 30A

Power - Max:: 227 W

Switching Energy:: 560µJ (on), 1.35mJ (off)

Input Type:: Standard

Gate Charge:: 168 nC

Td (on/off) @ 25°C:: 59ns/283ns

Test Condition:: 400V, 30A, 23Ohm, 15V

Reverse Recovery Time (trr):: 59 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW30N65NL5XKSA1 FAQ

1.How can I place an order for IKW30N65NL5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N65NL5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N65NL5XKSA1 reliable?

The price and inventory of IKW30N65NL5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N65NL5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N65NL5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N65NL5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N65NL5XKSA1?

IKW30N65NL5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N65NL5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N65NL5XKSA1?

For technical support, including IKW30N65NL5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N65NL5XKSA1 requirements.

6.How does Aetrix verify that IKW30N65NL5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N65NL5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N65NL5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N65NL5XKSA1?

All IKW30N65NL5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N65NL5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N65NL5XKSA1 part is unused and in its original packaging.

Return procedure for IKW30N65NL5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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