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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW30N65WR5XKSA1

Name: IKW30N65WR5XKSA1
Brand: Infineon Technologies
SKU: IKW30N65WR5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW30N65WR5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW30N65WR5XKSA1.pdf

Description:: IGBT TRENCH 650V 60A TO247-3

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Product details

Overview

IKW30N65WR5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode in PG-TO247-3 package, rated for 650 V V_CE, 30 A continuous collector current at T_C = 117°C, and 1.4 V V_CEsat at 25°C. It integrates a fast, low-loss anti-parallel diode optimized for zero-current-switching (ZCS) topologies in industrial power converters.

For engineers reviewing the IKW30N65WR5XKSA1 datasheet, IKW30N65WR5XKSA1 pinout, IKW30N65WR5XKSA1 application, or IKW30N65WR5XKSA1 equivalent, key selection criteria include its positive temperature coefficient of V_CEsat, low E_off (0.10 mJ @ 25°C), 95 ns diode t_rr, and thermal resistance R_th(j-c) = 0.81 K/W for IGBT and 3.40 K/W for diode - critical for parallel operation and thermal design in welding and PFC stages.

Technical Context

This RC-IGBT combines TRENCHSTOP™ 5 IGBT die and an optimized co-packaged diode on a single silicon chip, enabling simultaneous conduction control and reverse recovery management without external diode placement. Its gate threshold voltage (V_GE(th) = 3.2–4.8 V) and transconductance (g_fs = 35 S) support stable drive under varying junction temperatures up to 175°C.

The device exhibits low dynamic losses: E_on = 0.47 mJ and E_off = 0.10 mJ at 25°C, with switching times (t_d(off) = 367 ns, t_f = 9 ns) tailored for high-frequency ZCS converters. Diode reverse recovery parameters (Q_rr = 1.25 µC, I_rrm = 22 A) are specified at 900 A/µs di/dt, confirming suitability for hard-switched PFC and resonant welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for 400 V DC-link applications with 1.6× safety margin
I_C (T_C = 117°C)	30 A - Continuous current rating at industrial case temperature, defining heatsink sizing
V_CEsat (25°C)	1.4 V - Low conduction loss enabling <1.5 W static loss at 30 A, reducing thermal stress
E_off (25°C)	0.10 mJ - Enables efficient 20–50 kHz switching in ZCS converters with minimal turn-off loss
t_rr (25°C)	95 ns - Fast diode recovery minimizes commutation tail loss and EMI in resonant circuits
R_th(j-c) (IGBT)	0.81 K/W - Enables direct mounting to heatsink with predictable junction-to-case thermal drop
Q_G	155 nC - Gate charge value used to size gate driver peak current (≥6 A for 26 Ω RG)

Pinout & Package

IKW30N65WR5XKSA1 uses the PG-TO247-3 package: insulated metal tab, vertical lead frame, 3-pin through-hole outline with isolated collector tab. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives ±20 V gate drive; requires 155 nC total charge for full turn-on
Pin 2 (Collector)	Main high-side power terminal	Electrically connected to metal tab; carries full load current and must be thermally coupled to heatsink
Pin 3 (Emitter)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; critical for low-inductance gate loop layout

Key Features

Feature	Design Value
Monolithic body diode	Integrated 15 A diode (T_C = 100°C) with 95 ns t_rr, eliminating discrete diode layout and parasitic inductance
Positive V_CEsat tempco	V_CEsat increases with temperature (1.4 → 1.65 V from 25°C to 175°C), enabling inherent current sharing in parallel configurations
TRENCHSTOP™ 5 technology	Delivers 0.10 mJ E_off and 0.47 mJ E_on at 25°C, reducing total switching loss by ≥25% vs. previous-generation RC-IGBTs
Junction temperature range	−40°C to +175°C operation supports sealed industrial enclosures and uncooled welder designs
Pb-free & RoHS compliant	Meets JESD-022 qualification for humidity and temperature cycling, ensuring reliability in harsh environments

Applications

Welding Inverter

PFC Stage

Use Scenario: High-duty-cycle arc welding with 20–30 kHz resonant switching and rapid current reversal.

IC Role / Device Role / Timing Role: RC-IGBT serves as main switching element and bidirectional current path; integrated diode handles reverse current during ZCS transitions.

Use Value: 95 ns t_rr and low Q_rr reduce switching loss and EMI during arc re-ignition, improving weld stability and electrode life.

Use Scenario: Three-phase active front-end rectifier in UPS or motor drives requiring >98% efficiency and THD <5%.

IC Role / Device Role / Timing Role: Operates in boost PFC topology with interleaved phase legs; monolithic diode conducts during freewheeling intervals.

Use Value: 1.4 V V_CEsat and 0.10 mJ E_off minimize conduction and switching losses across 40–60 kHz operation, enabling compact heatsink design.

ZCS Resonant Converter

Induction Heating

Use Scenario: Medium-frequency (50–200 kHz) series-resonant inverter for industrial heating with soft-switching requirements.

IC Role / Device Role / Timing Role: Functions as half-bridge switch where integrated diode provides natural commutation path during zero-current dead time.

Use Value: Matched IGBT/diode thermal coefficients and low E_ts (0.57 mJ) ensure consistent ZCS behavior across temperature, preventing hard-switching failure.

Use Scenario: Solid-state induction cooktop with variable-frequency resonant tank and rapid power modulation.

IC Role / Device Role / Timing Role: Switches resonant tank current while integrated diode recirculates reactive energy during each half-cycle.

Use Value: 3.40 K/W diode R_th(j-c) enables independent thermal management of diode losses, preventing localized hot spots during burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65WR5	Higher I_C = 40 A (T_C = 117°C), same V_CE = 650 V, slightly higher V_CEsat = 1.45 V, E_off = 0.12 mJ	Better suited for 5–10 kW welding or PFC where derating headroom is required	Select when system peak current exceeds 30 A or long-term reliability margin >20% is mandated
FGH40N60UFD	Standard 600 V IGBT + separate ultrafast diode; V_CEsat = 1.8 V, E_off = 0.18 mJ, no monolithic integration	Requires careful layout to minimize diode loop inductance; higher total conduction loss	Choose only if existing PCB layout lacks space for TO247-3 footprint or cost sensitivity outweighs performance gain

Compared with IKW40N65WR5 and FGH40N60UFD, IKW30N65WR5XKSA1 delivers optimal balance of conduction efficiency (1.4 V), switching speed (9 ns fall time), and thermal predictability (0.81 K/W R_th(j-c)) for 3–5 kW industrial converters where board space and EMI are constrained.

Availability

IKW30N65WR5XKSA1 is available at Aetrix Electronics and suitable for welding inverters, active PFC modules, and ZCS resonant converters requiring stable component supply, traceable lot history, and long-term industrial lifecycle support.

Supply support for IKW30N65WR5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW30N65WR5XKSA1 belongs to Infineon's Reverse Conducting IGBT product line, engineered specifically for high-efficiency, high-reliability ZCS and resonant converter topologies in industrial power equipment.

FAQ

What is the maximum gate-emitter voltage rating for IKW30N65WR5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is −10 V to +15 V, with −5 V to −10 V recommended for robust noise immunity during turn-off. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers.

Can IKW30N65WR5XKSA1 be paralleled with other units?

Yes - its positive temperature coefficient of V_CEsat ensures self-balancing current distribution across devices operating at different junction temperatures. Parallel operation requires matched gate resistors (RG(on)/RG(off)), symmetrical PCB layout, and shared heatsink with uniform thermal interface material to maintain ΔT_j < 5°C between units.

What is the diode's forward voltage at 15 A and 175°C?

The diode forward voltage (V_F) is 1.50 V (typical) and 1.90 V (max) at I_F = 15 A and T_vj = 175°C. This elevated V_F reflects increased carrier recombination at high temperature but remains within design margins for PFC and ZCS applications with appropriate thermal management.

Is the integrated diode rated for repetitive avalanche energy?

No - the integrated diode is not rated for repetitive avalanche operation. Its safe operating area is defined by forward bias limits (I_F, I_Fpuls) and reverse recovery parameters (t_rr, Q_rr). Avalanche energy handling applies only to the IGBT section under specified test conditions per datasheet Figure 1.

IKW30N65WR5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 30A

Power - Max:: 185 W

Switching Energy:: 990µJ (on), 330µJ (off)

Input Type:: Standard

Gate Charge:: 155 nC

Td (on/off) @ 25°C:: 39ns/367ns

Test Condition:: 400V, 15A, 26Ohm, 15V

Reverse Recovery Time (trr):: 95 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW30N65WR5XKSA1 FAQ

1.How can I place an order for IKW30N65WR5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW30N65WR5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW30N65WR5XKSA1 reliable?

The price and inventory of IKW30N65WR5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW30N65WR5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW30N65WR5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW30N65WR5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW30N65WR5XKSA1?

IKW30N65WR5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW30N65WR5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW30N65WR5XKSA1?

For technical support, including IKW30N65WR5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW30N65WR5XKSA1 requirements.

6.How does Aetrix verify that IKW30N65WR5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW30N65WR5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW30N65WR5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW30N65WR5XKSA1?

All IKW30N65WR5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW30N65WR5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW30N65WR5XKSA1 part is unused and in its original packaging.

Return procedure for IKW30N65WR5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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