Infineon Technologies IKW40N120CH7XKSA1

Overview

IKW40N120CH7XKSA1 from Infineon is a 1200 V, 40 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 40 A ultra-fast recovery emitter-controlled diode in a PG-TO247-3-STD package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 120 ns (25°C), and Q_rr = 1.27 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV-charging systems.

For engineers reviewing the IKW40N120CH7XKSA1 datasheet, IKW40N120CH7XKSA1 pinout, IKW40N120CH7XKSA1 application, or IKW40N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, low switching losses (E_on = 1.69 mJ, E_off = 0.92 mJ @ 25°C), and 175°C maximum junction temperature rating.

Technical Context

This device integrates an IGBT and a matched 7 Rapid diode on a single die substrate within a single TO-247-3 package. The IGBT uses TRENCHSTOP™ 7 technology with optimized carrier lifetime control to achieve low conduction loss and fast, soft turn-off-critical for minimizing voltage overshoot in high-dV/dt applications like welding inverters.

The co-packed diode features emitter control and ultra-low Q_rr, delivering soft reverse recovery (I_rrm = 27 A, dirr/dt = −348 A/µs @ 25°C) and reduced E_rec (0.37 mJ). Its thermal resistance R_th(j-c) is 0.6 K/W, enabling efficient heat transfer when mounted on heatsinks in high-power industrial converters.

Key Specifications

Pinout & Package

Package: PG-TO247-3-STD (standard 3-pin TO-247), lead-free, RoHS-compliant, with mounting torque limit of 0.6 Nm (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT/diode module applications.

Compared with IXGN40N120B3 and STGW40H120F2, IKW40N120CH7XKSA1 uniquely combines lowest V_CE(sat), lowest Q_rr, and softest diode recovery in a monolithic package-making it optimal for high-efficiency, high-frequency, and EMI-sensitive applications such as string inverters and liquid-cooled EV chargers.

Availability

IKW40N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging stations, and string solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing under JEDEC JESD47 qualification.

Supply support for IKW40N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, designed specifically for high-efficiency, high-reliability hard-switching power conversion in renewable energy, industrial automation, and e-mobility infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 10 Ω for characterization. For safe operation at 175°C junction temperature and 40 A load, Infineon recommends RG ≤ 15 Ω to maintain adequate dV/dt immunity and minimize switching time dispersion. Higher values increase E_on/E_off and risk thermal runaway during paralleling.

Does IKW40N120CH7XKSA1 require negative gate voltage for turn-off?

No. The device is fully compatible with 0 V/15 V gate drive. Negative voltage (e.g., −5 V) is not required for robust turn-off, though it may improve noise immunity in high-dV/dt environments. V_GE ratings allow ±20 V steady-state and ±25 V transient, confirming safe 0/+15 V operation.

Can this IGBT be paralleled without active current balancing?

Yes. Its positive V_CE(sat) temperature coefficient (increasing from 1.7 V at 25°C to 2.0 V at 175°C) ensures natural current sharing among paralleled units. Layout symmetry and matched gate drive impedance remain essential-but no external emitter resistors or current-sense feedback are needed for stable operation.

Is the diode in this device suitable for freewheeling in synchronous rectification?

No. The integrated 7 Rapid diode is optimized for soft commutation in inverter legs-not for synchronous rectification. Its VF = 2.5 V at 40 A and lack of body-diode-like reverse conduction characteristics make it unsuitable as a low-loss freewheeling path. Use external SiC Schottky diodes or actively controlled MOSFETs for that function.