Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKW40N120CS6XKSA1

Part No.:
IKW40N120CS6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW40N120CS6XKSA1.pdf
Description:
IGBT TRENCH FS 1200V 80A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:510

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKW40N120CS6XKSA1 from Infineon is a 1200 V, 40 A TRENCHSTOP™ IGBT6 with integrated soft-recovery anti-parallel diode in PG-TO247-3 package, designed for high-efficiency hard-switching and resonant topologies in industrial UPS, solar string inverters, and welding systems. It delivers 1.85 V VCE(sat) at 25°C, 175°C max junction temperature, and 285 nC total gate charge.

For engineers reviewing the IKW40N120CS6XKSA1 datasheet, IKW40N120CS6XKSA1 pinout, IKW40N120CS6XKSA1 application, or IKW40N120CS6XKSA1 equivalent, key selection criteria include soft switching performance, low EMI, positive VCE(sat) temperature coefficient for paralleling, and co-packaged diode recovery characteristics under 800 A/µs di/dt.

Technical Context

This sixth-generation IGBT employs Trench & Fieldstop architecture optimized for high-speed soft switching, featuring low tail current and tightly controlled diode reverse recovery (Qrr = 2.65 µC typ. at 25°C, 6.40 µC at 175°C). Its gate threshold voltage (VGE(th) = 5.1–6.3 V) and transconductance (gfs = 32 S typ.) support stable drive across –40°C to +175°C operation.

The device integrates a full-current, fast-recovery anti-parallel diode with 400 ns trr (25°C) and –65 A/µs dirr/dt rating, enabling clean commutation in three-level NPC and T-type inverter legs. Thermal resistance Rth(j-c) is 0.30 K/W (IGBT) and 0.78 K/W (diode), supporting high-power density designs with forced-air or liquid-cooled heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Supports DC bus voltages up to 1000 V in 3L solar inverters and industrial UPS with 20% safety margin.
IC 40 A continuous @ Tc = 100°C - Rated for sustained conduction in 15–25 kW power stages without derating.
VCE(sat) 1.85 V @ IC = 40 A, Tvj = 25°C - Enables <1.5 W conduction loss per device at rated current, reducing heatsink requirements.
QG 285 nC - Low gate charge allows efficient driving with standard 2–4 A gate drivers and reduces switching losses at 16–30 kHz.
tSC 3 µs @ VGE = 15 V, VCC ≤ 500 V - Enables robust short-circuit protection using fast desaturation detection circuits.
trr / Qrr 400 ns / 2.65 µC @ 25°C - Soft diode recovery minimizes voltage overshoot and EMI during freewheeling in inductive loads.
Rth(j-c) 0.30 K/W - Enables direct mounting to heatsinks with ≤ 15 K/W system thermal resistance for 175°C junction limit.

Pinout & Package

PG-TO247-3 package: isolated metal tab (collector), 3-pin through-hole outline with 2.54 mm lead pitch; screw-mount compatible with M3 hardware (0.6 Nm torque).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Left) Emitter (E) Main emitter terminal; connects to low-side return path and gate driver reference; carries full load current and diode forward current.
Pin 2 (Center) Collector (C) High-voltage output node; electrically connected to metal tab; requires isolation from heatsink unless designated as "collector-tab" configuration.
Pin 3 (Right) Gate (G) Control input; driven by isolated gate driver; sensitive to ESD and dv/dt-induced turn-on; requires low-inductance layout and gate resistor tuning (RG = 9 Ω typical).

Key Features

Feature Design Value
Positive VCE(sat) tempco Enables stable current sharing in parallel configurations without external current-balancing resistors or active control.
Soft, fast diode recovery Reduces voltage spikes and snubber losses in hard-switched converters, lowering EMI filter cost and size.
175°C maximum junction temperature Supports compact thermal design and extended lifetime in high-ambient environments (e.g., enclosed UPS cabinets).
Pb-free, RoHS-compliant plating Meets industrial and energy infrastructure compliance requirements without lead-based solder compatibility constraints.
JEDEC-qualified for industrial use Validated per JEDEC47/20/22 standards for temperature cycling, humidity, and mechanical shock-suitable for 15+ year field life.

Applications

Industrial UPS Three-Level Solar String Inverter

Use Scenario: Online double-conversion UPS delivering clean 3-phase output with 96–98% efficiency at 10–30 kVA.

IC Role / Device Role / Timing Role: High-side IGBT in 3L NPC inverter leg, switching at 16 kHz with synchronous diode commutation.

Use Value: Low VCE(sat) and soft diode reduce conduction and switching losses, enabling >97% system efficiency at full load without liquid cooling.

Use Scenario: Centralized string inverter converting 1000–1500 V DC PV input to grid-synchronized AC with THD < 2%.

IC Role / Device Role / Timing Role: Outer-leg IGBT in T-type topology, handling full DC link voltage during clamping intervals.

Use Value: 1200 V rating and low Qrr enable reliable 3L operation with reduced voltage stress on inner switches and lower filter component count.

Energy Storage System (ESS) Bi-Directional Converter Industrial Welding Power Supply

Use Scenario: 50 kW bi-directional DC/AC converter interfacing Li-ion battery banks with medium-voltage grid or microgrid.

IC Role / Device Role / Timing Role: Bidirectional switch in dual-active-bridge or 3L ANPC topology, conducting both charging and discharging currents.

Use Value: Symmetrical IC/IF ratings (40 A continuous) and matched thermal resistance simplify thermal management for bidirectional power flow.

Use Scenario: Inverter-based arc welding supply delivering 200–500 A DC output with rapid current slew rates (>100 A/ms).

IC Role / Device Role / Timing Role: Primary inverter switch in resonant LLC or phase-shifted full-bridge topology operating at 50–100 kHz.

Use Value: Low EMI and high dv/dt immunity (due to soft switching) prevent arc instability and ensure consistent weld bead formation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN40N120B3 Higher VCE(sat) (2.2 V), higher QG (340 nC), no integrated diode - requires discrete ultrafast diode. Less suitable for space-constrained 3L inverters due to separate diode placement and higher switching losses. Prefer when discrete diode selection is required for custom recovery tuning or legacy board reuse.
STMicroelectronics STGW40H12DF2 Lower VCE(sat) (1.75 V), but higher Qrr (3.8 µC), limited to 150°C Tvj(max). Acceptable for lower-temp industrial drives but not recommended for 175°C-rated UPS or ESS enclosures. Choose only if thermal margin is >25 K and diode recovery EMI is less critical than conduction loss.

Compared with IXGN40N120B3 and STGW40H12DF2, IKW40N120CS6XKSA1 offers superior soft-switching capability, integrated diode matching, and full 175°C operation-making it optimal for high-reliability, high-density renewable energy and backup power systems where thermal headroom and EMI control are decisive.

Availability

IKW40N120CS6XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and energy storage systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKW40N120CS6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IKW40N120CS6XKSA1 belongs to the TRENCHSTOP™ IGBT6 family, engineered specifically for high-efficiency, high-reliability industrial power conversion-including UPS, solar inverters, welding, and motor drives-where soft switching, thermal robustness, and system-level EMI reduction are critical.

FAQ

What is the maximum allowable gate-emitter voltage for IKW40N120CS6XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient tolerance up to +25 V for pulses ≤ 0.5 µs and duty cycle < 0.001. Exceeding these limits risks permanent gate oxide damage. Recommended gate drive is +15 V / –5 V to ensure robust turn-on and fast, controlled turn-off while avoiding Miller-induced false triggering.

Does IKW40N120CS6XKSA1 require an external freewheeling diode?

No. The device integrates a full-current, soft-recovery anti-parallel diode rated for 40 A continuous (Tc = 100°C) and 160 A pulsed. This diode is co-optimized with the IGBT for matched thermal behavior and low Qrr, eliminating need for external diodes in standard inverter leg configurations.

How does the positive temperature coefficient of VCE(sat) improve system reliability?

The rising VCE(sat) with junction temperature (1.85 V → 2.25 V from 25°C to 175°C) causes naturally balanced current sharing among paralleled devices. As one device heats up, its conduction loss increases, reducing its share of total current-preventing thermal runaway without external sensing or active balancing circuitry.

Can IKW40N120CS6XKSA1 be used in 650 V DC-link applications?

Yes. While rated for 1200 V, it is commonly deployed in 650 V systems (e.g., EV chargers, industrial drives) where its low VCE(sat) and soft switching yield higher efficiency and lower EMI than 650 V-class IGBTs. Derating is unnecessary; the 1200 V rating provides ample margin against voltage transients and bus overvoltage events.

IKW40N120CS6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
160 A
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 40A
Power - Max:
500 W
Switching Energy:
2.55mJ (on), 1.55mJ (off)
Input Type:
Standard
Gate Charge:
285 nC
Td (on/off) @ 25°C:
27ns/315ns
Test Condition:
600V, 40A, 9Ohm, 15V
Reverse Recovery Time (trr):
400 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

IKW40N120CS6XKSA1 FAQ

1.How can I place an order for IKW40N120CS6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW40N120CS6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW40N120CS6XKSA1 reliable?

The price and inventory of IKW40N120CS6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N120CS6XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW40N120CS6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N120CS6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW40N120CS6XKSA1?

IKW40N120CS6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW40N120CS6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW40N120CS6XKSA1?

For technical support, including IKW40N120CS6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N120CS6XKSA1 requirements.

6.How does Aetrix verify that IKW40N120CS6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW40N120CS6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N120CS6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW40N120CS6XKSA1?

All IKW40N120CS6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N120CS6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW40N120CS6XKSA1 part is unused and in its original packaging.

Return procedure for IKW40N120CS6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKW40N120CS6XKSA1 Tags

  • IKW40N120CS6XKSA1
  • IKW40N120CS6XKSA1 PDF
  • IKW40N120CS6XKSA1 Datasheet
  • IKW40N120CS6XKSA1 Specifications
  • IKW40N120CS6XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKW40N120CS6XKSA1
  • Buy IKW40N120CS6XKSA1
  • IKW40N120CS6XKSA1 Price
  • IKW40N120CS6XKSA1 Distributor
  • IKW40N120CS6XKSA1 Supplier
  • IKW40N120CS6XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER