Infineon Technologies IKW40N120CS7XKSA1

Overview

IKW40N120CS7XKSA1 from Infineon is a 1200 V, 40 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3 package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, 8 µs short-circuit withstand time, and optimized switching for 2-level inverters and 3-level NPC/T-type topologies. Used in solar inverters and industrial motor drives requiring high-voltage hard-switching robustness.

For engineers reviewing the IKW40N120CS7XKSA1 datasheet, IKW40N120CS7XKSA1 pinout, IKW40N120CS7XKSA1 application, or IKW40N120CS7XKSA1 equivalent, key selection criteria include short-circuit ruggedness, dv/dt controllability, co-packaged diode Q_rr and recovery softness, and thermal resistance (R_thjc = 0.30–0.42 K/W for IGBT, 0.55–0.75 K/W for diode).

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT cell architecture with enhanced carrier lifetime control and field-stop design, enabling low conduction loss while maintaining 8 µs short-circuit capability at 150 °C junction temperature. The integrated Emitter Controlled 7 diode features low Q_rr (2.45–6.60 µC), soft recovery (trr = 175–315 ns), and low reverse recovery energy (E_rec = 0.75–2.40 mJ).

It is rated for 1200 V blocking, operates up to 175 °C junction temperature, and supports gate drive with ±20 V V_GE rating. Switching behavior is characterized under standardized dynamic test conditions (L_σ = 30 nH, C_σ = 18 pF) and validated for industrial applications per JEDEC47/20/22 standards.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard 3-pin through-hole TO-247 variant with isolated tab). Pin assignment verified per Infineon datasheet revision 1.00 (2021-03-17).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT module applications.

Compared with IKW40N120H3, this part adds guaranteed short-circuit ruggedness and lower saturation voltage, improving reliability in uncontrolled fault scenarios; compared with FF400R12KE4, it offers smaller footprint and lower gate drive demand, better suited for space-constrained 15–25 kW designs.

Availability

IKW40N120CS7XKSA1 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and UPS inverter modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKW40N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in solar, UPS, and industrial motor drives where short-circuit robustness and thermal stability are critical.

FAQ

What is the maximum allowable gate-emitter voltage for IKW40N120CS7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±25 V for pulses ≤ 0.5 µs (duty cycle < 0.001). Exceeding these limits risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) and low-inductance layout to prevent ringing-induced overvoltage.

Does IKW40N120CS7XKSA1 require a negative gate voltage for turn-off?

No, it does not require negative gate voltage for reliable turn-off. The device is fully characterized with 0 V / +15 V gate drive. However, applying –5 V to –10 V during off-state improves noise immunity and reduces leakage-induced false turn-on in high-dv/dt environments, especially at elevated temperatures.

Can the integrated diode be used independently of the IGBT?

Yes - the co-packaged Emitter Controlled 7 diode shares only the emitter terminal with the IGBT and has independent anode connection (collector pin serves as diode cathode). It can conduct freewheeling current during IGBT off-time and is rated for 40 A continuous forward current at T_C = 100 °C, with soft recovery characteristics verified across temperature.

What is the recommended gate resistor value for standard operation?

Infineon specifies switching times and energies using R_Gon = R_Goff = 4.0 Ω. This value balances switching speed (t_on ≈ 48 ns, t_off ≈ 340 ns at 25 °C) and gate driver stress. For higher efficiency, reduce R_G to 2.2–3.3 Ω; for EMI reduction or dv/dt limiting, increase to 5.6–10 Ω - always verify with actual layout parasitics and thermal measurements.