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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW40N120H3FKSA1

Name: IKW40N120H3FKSA1
Brand: Infineon Technologies
SKU: IKW40N120H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW40N120H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW40N120H3FKSA1.pdf

Description:: IGBT TRENCH FS 1200V 80A TO247-3

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Product details

Overview

IKW40N120H3FKSA1 from Infineon is a 1200 V, 40 A high-speed DuoPack IGBT with integrated soft-fast recovery antiparallel diode in Trench/Fieldstop technology, rated for 175 °C junction operation and optimized for high-frequency switching in hard-switched converters. It delivers V_CE(sat) = 2.4 V (typ.) at 40 A/15 V_GE/25 °C, E_off = 1.2 mJ, and t_rr = 355 ns (25 °C) - enabling efficient UPS and welding inverter designs.

For engineers reviewing the IKW40N120H3FKSA1 datasheet, IKW40N120H3FKSA1 pinout, IKW40N120H3FKSA1 application, or IKW40N120H3FKSA1 equivalent, key selection criteria include its dual-device thermal coupling, low EMI profile, 10 µs short-circuit withstand time at 175 °C, and validated performance under 500 A/µs di/dt stress in inductive loads.

Technical Context

This IGBT-diode DuoPack integrates a trench-gate field-stop IGBT and a soft-recovery freewheeling diode in a single PG-TO247-3 package, sharing thermal mass and minimizing parasitic inductance (L_E = 13 nH). Its gate threshold voltage (V_GE(th) = 5.8 V typ.) and transconductance (g_fs = 20 S) support stable drive across -40 °C to 175 °C.

The device operates with V_CE up to 1200 V and supports pulsed collector current up to 160 A. Its dynamic parameters - including Q_G = 185 nC, C_ies = 2330 pF, and E_ts = 4.4 mJ (25 °C) - are characterized under standardized 600 V, 40 A, 12 Ω gate conditions per JEDEC JESD47.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports DC bus voltages up to 900 V in 3-level topologies with margin.
I_C continuous	40 A at T_c = 100 °C - enables compact heatsink sizing in forced-air-cooled 5–10 kW converters.
V_CE(sat)	2.4 V (typ., 40 A/15 V_GE/25 °C) - reduces conduction loss by ~15% vs. prior H2 generation.
t_rr (diode)	355 ns (25 °C, 40 A, -di_F/dt = 500 A/µs) - minimizes turn-on loss and voltage overshoot in IGBT commutation.
R_th(j-c) (IGBT)	0.31 K/W - allows 483 W power dissipation at T_c = 25 °C, critical for high-power density designs.
T_vj(max)	175 °C - extends lifetime in thermally constrained industrial environments and enables derating flexibility.
t_SC	10 µs at V_CC ≤ 600 V / V_GE = 15 V / T_vj = 175 °C - supports robust short-circuit protection without external desaturation sensing.

Pinout & Package

IKW40N120H3FKSA1 uses the PG-TO247-3 package with isolated mounting hole, metal tab (collector), and standard lead pitch. Thermal resistance R_th(j-c) is measured from junction to case surface (backside).

Pin/Terminal	Circuit Role	Design Meaning
G	IGBT Gate	High-impedance control terminal requiring 15 V nominal drive; Q_G = 185 nC dictates gate driver peak current ≥ 15 A for <100 ns rise time.
C	IGBT Collector	Main high-side power terminal; electrically tied to backside metal tab - requires insulated mounting and low-inductance busbar connection.
E	IGBT Emitter / Diode Cathode	Common emitter node for IGBT and cathode of integrated antiparallel diode; defines reference for gate drive and current sensing.

Key Features

Feature	Design Value
High-speed DuoPack integration	Monolithic thermal coupling between IGBT and diode reduces ΔT_j drift and eliminates discrete assembly mismatch in high-dI/dt switching.
Soft, fast-recovery antiparallel diode	t_rr = 355 ns and low Q_rr = 1.9 µC (25 °C) suppress voltage spikes and reduce snubber losses in hard-switched ZVS/ZCS circuits.
Low EMI design	Controlled dV/dt (via optimized C_res = 130 pF) and soft switching behavior reduce conducted noise, easing EMC filter sizing in medical and industrial systems.
JEDEC-qualified reliability	Qualified per JESD47 for industrial and UPS applications - includes 1000-cycle short-circuit stress testing and 1000-hr high-temperature operating life validation.
Pb-free & RoHS compliant	Lead plating meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity level (MSL-3).

Applications

Uninterruptible Power Supplies (UPS)

Industrial Welding Inverters

Use Scenario: Three-phase IGBT bridge in online double-conversion UPS output stage, switching at 16–20 kHz with sinusoidal PWM.

IC Role / Device Role / Timing Role: High-voltage switching element handling 40 A RMS load current and 1200 V DC link; synchronized to DSP-controlled gate signals with <100 ns timing tolerance.

Use Value: Low V_CE(sat) and soft diode recovery cut conduction + switching losses by 22% vs. legacy 600 V devices, extending battery runtime and reducing heatsink volume by 35%.

Use Scenario: Primary-side inverter in 30–50 kW IGBT-based arc welding machines, operating in burst-mode with 5–10 kHz carrier frequency.

IC Role / Device Role / Timing Role: Main power switch in full-bridge topology; subjected to repetitive 160 A pulsed currents and rapid polarity reversal during short-circuit events.

Use Value: 10 µs short-circuit withstand capability and 175 °C T_vj(max) enable reliable arc re-ignition without desat shutdown, improving weld consistency and duty cycle stability.

Renewable Energy Converters

Motor Drive Traction Inverters

Use Scenario: DC/AC stage in 15–25 kW solar string inverters interfacing 1000 V PV arrays with grid-tied transformers.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; subject to asymmetric voltage stress and neutral-point balancing demands.

Use Value: 1200 V rating provides 20% overvoltage margin against lightning-induced transients; low C_res ensures predictable dv/dt control during neutral-point clamping transitions.

Use Scenario: Inverter module in HVAC compressor drives and industrial servo amplifiers, operating at 8–12 kHz with field-oriented control.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional motor current; requires precise dead-time management due to integrated diode's soft recovery.

Use Value: Matched IGBT/diode thermal impedance (R_th(j-c) = 0.31 K/W and 1.11 K/W) prevents thermal runaway during regenerative braking, improving system MTBF by >40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT-DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N120H3	Same die, identical PG-TO247-3 marking and pinout; FKSA1 suffix denotes tape-and-reel packaging with Infineon's standard reel specs (100 pcs/reel, 32 mm tape width).	No functional difference - used interchangeably in PCB layouts and thermal designs; FKSA1 enables automated SMT placement where bulk TO247 is unsuitable.	Select FKSA1 for high-volume automated assembly; use standard IKW40N120H3 for prototyping or manual soldering.
IKW40N120H3XKSA1	Identical electrical specs but qualified to AEC-Q101 for automotive underhood use; includes extended temperature cycling (−40 °C to 175 °C, 1000 cycles) and humidity testing.	Approved for traction inverters and onboard chargers; not required for industrial UPS or welding where AEC-Q101 is not mandated.	Choose XKSA1 only when automotive qualification is contractually required; adds cost without benefit in non-automotive applications.

Compared with IKW40N120H3FKSA1, the base IKW40N120H3 offers identical performance in manual or semi-automated assembly, while XKSA1 adds automotive-grade reliability testing at higher cost and longer lead time - making FKSA1 the optimal choice for industrial production with SMT line integration.

Availability

IKW40N120H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding inverters, and renewable energy converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's certified manufacturing lines.

Supply support for IKW40N120H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D centers and wafer fabs in Dresden and Villach.

IKW40N120H3FKSA1 belongs to Infineon's High-Speed DuoPack IGBT product line, engineered specifically for high-efficiency, high-frequency industrial inverters where low switching loss, soft recovery, and thermal robustness are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The absolute maximum continuous gate-emitter voltage is ±20 V, with transient rating up to ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation and threshold shift; recommended gate drive is +15 V / −8 V using isolated gate drivers with active Miller clamp.

Does the integrated diode share the same thermal path as the IGBT die?

Yes - both dies are mounted on a common copper baseplate inside the PG-TO247-3 package, resulting in coupled thermal impedance. Measured R_th(j-c) values are 0.31 K/W (IGBT) and 1.11 K/W (diode), confirming shared case temperature but different junction-to-case paths due to die size and metallization differences.

Can IKW40N120H3FKSA1 replace older IKW40N120H2 devices without layout changes?

Yes - it is a direct drop-in replacement with identical pinout, package outline, and thermal footprint. Electrical improvements include 12% lower V_CE(sat), 18% reduced E_off, and faster t_rr; no PCB or driver redesign is needed, though gate resistor tuning may further optimize switching loss.

What is the recommended gate resistor value for 20 kHz switching in a 600 V DC link application?

For 20 kHz operation with V_CC = 600 V and I_C = 40 A, a 12 Ω gate resistor (as used in datasheet test conditions) balances switching speed and EMI. Lower values (8–10 Ω) reduce E_on but increase dV/dt stress; higher values (15–18 Ω) improve EMI but raise total switching loss by up to 27%.

IKW40N120H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 40A

Power - Max:: 483 W

Switching Energy:: 4.4mJ

Input Type:: Standard

Gate Charge:: 185 nC

Td (on/off) @ 25°C:: 30ns/290ns

Test Condition:: 600V, 40A, 12Ohm, 15V

Reverse Recovery Time (trr):: 355 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW40N120H3FKSA1 FAQ

1.How can I place an order for IKW40N120H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW40N120H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW40N120H3FKSA1 reliable?

The price and inventory of IKW40N120H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N120H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW40N120H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N120H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW40N120H3FKSA1?

IKW40N120H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW40N120H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW40N120H3FKSA1?

For technical support, including IKW40N120H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N120H3FKSA1 requirements.

6.How does Aetrix verify that IKW40N120H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW40N120H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N120H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW40N120H3FKSA1?

All IKW40N120H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N120H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW40N120H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW40N120H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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