Infineon Technologies IKW40N120T2FKSA1

Overview

IKW40N120T2FKSA1 from Infineon is a 1200 V, 40 A TRENCHSTOP™ 2nd Generation IGBT with integrated soft-recovery Emitter Controlled Diode in PG-TO-247-3 package. It delivers 1.75 V V_CE(sat) at 25°C, 10 µs short-circuit withstand time, and 192 nC gate charge, designed for frequency converters and uninterruptible power supplies requiring high ruggedness and temperature-stable switching.

For engineers reviewing the IKW40N120T2FKSA1 datasheet, IKW40N120T2FKSA1 pinout, IKW40N120T2FKSA1 application, or IKW40N120T2FKSA1 equivalent, key selection criteria include V_CE(sat) drift over temperature, diode reverse recovery charge (Q_rr = 3.3 µC at 25°C), short-circuit robustness, thermal resistance (R_thJC = 0.31 K/W), and gate drive compatibility with ±20 V V_GE rating.

Technical Context

This IGBT uses trench-gate field-stop architecture with emitter-controlled diode integration, enabling positive V_CE(sat) temperature coefficient for stable paralleling and low EMI due to controlled fall time (t_f = 94 ns at 25°C) and reduced reverse recovery dv/dt. Its 1200 V blocking capability targets medium-voltage industrial inverters.

The device features JEDEC1-qualified reliability, RoHS-compliant Pb-free plating, and operates across –40°C to +175°C junction range. Thermal design is supported by separate R_thJC values for IGBT (0.31 K/W) and diode (0.53 K/W), reflecting independent die thermal paths in the DuoPack structure.

Key Specifications

Pinout & Package

PG-TO-247-3 package with isolated mounting base, standard leadframe layout, and creepage/clearance compliant with IEC 61800-5-1 for 1200 V systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW25N120T2 and FF400R12KE4, IKW40N120T2FKSA1 uniquely balances 40 A rating, low-loss trench architecture, and integrated diode in standard TO-247-3-making it optimal for space-constrained 20–30 kW industrial inverters needing proven field reliability.

Availability

IKW40N120T2FKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, solar central inverters, and energy storage system converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKW40N120T2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

The TRENCHSTOP™ 2nd Generation IGBT product line was engineered specifically for industrial motor drives and UPS systems demanding high short-circuit ruggedness, tight parameter spread, and integrated diode performance at 1200 V blocking level.

FAQ

What is the maximum allowable gate-emitter voltage for IKW40N120T2FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, as specified in the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GE to +15 V during turn-on and –5 V to –10 V during turn-off to suppress Miller-induced false triggering.

Does IKW40N120T2FKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery Emitter Controlled Diode monolithically with the IGBT die in a DuoPack configuration. This eliminates the need for an external diode in standard 2-level inverter topologies, reducing component count and layout complexity while ensuring matched thermal behavior.

How does the short-circuit withstand time change with junction temperature?

The rated short-circuit withstand time remains 10 µs across the full operating junction temperature range (25°C to 175°C), verified under V_GE = 15 V, V_CC ≤ 600 V, and T_j,start ≤ 175°C conditions. This consistent rating simplifies protection circuit design without temperature-dependent timing adjustments.

What thermal interface material is recommended for PG-TO-247-3 mounting?

Infineon recommends thermally conductive silicone-based pastes (e.g., Dow Corning TC-5123) or phase-change pads (e.g., Laird Tpcm 580) with thermal conductivity ≥2.5 W/m·K. Mounting pressure must be 20–30 N/cm² to ensure uniform bond line thickness ≤0.08 mm and minimize interfacial thermal resistance.