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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW40N65ES5XKSA1

Name: IKW40N65ES5XKSA1
Brand: Infineon Technologies
SKU: IKW40N65ES5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW40N65ES5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW40N65ES5XKSA1.pdf

Description:: IGBT TRENCH 650V 79A TO247-3

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Product details

Overview

IKW40N65ES5XKSA1 from Infineon is a 650V, 40A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-current-rated RAPID 1 antiparallel diode in PG-TO247-3 package. It delivers V_CE(sat) = 1.35 V at 40 A and 25°C, t_d(off) = 130 ns, E_off = 0.40 mJ, and operates up to T_vj = 175°C - optimized for resonant converters and UPS inverters requiring low conduction loss and fast, soft turn-off.

For engineers reviewing the IKW40N65ES5XKSA1 datasheet, IKW40N65ES5XKSA1 pinout, IKW40N65ES5XKSA1 application, or IKW40N65ES5XKSA1 equivalent, key selection criteria include its 95 nC gate charge, 73 ns diode reverse recovery time (T_vj = 25°C), 0.65 K/W IGBT junction-to-case thermal resistance, and co-packaged diode with 1.45 V forward voltage at 40 A - critical for hard/soft-switching PFC and DC-DC stages.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology enabling simultaneous low V_CE(sat) and fast switching. Its integrated RAPID 1 diode features soft reverse recovery (dirr/dt = −1500 A/µs) and low Q_rr = 1.10 µC at 40 A, minimizing voltage overshoot and EMI in ZVS/ZCS topologies.

The device is characterized across temperature (25°C to 150°C) and load (20 A to 40 A) conditions, with validated dynamic parameters including t_r = 18 ns, t_f = 23 ns, and E_ts = 1.26 mJ under standard 400 V/40 A inductive test conditions - confirming suitability for mid-to-high-frequency (20–100 kHz) industrial power conversion.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V AC input rectified bus designs with 30% voltage margin for transients.
I_C	40 A continuous - rated for sustained conduction in 3 kW–5 kW inverter legs without derating at T_C = 25°C.
V_CE(sat)	1.35 V @ 40 A, 25°C - reduces conduction loss to ~54 W per device at full load, easing thermal design.
Q_G	95 nC - enables gate drive with <1 A peak current using standard 10 Ω gate resistors, simplifying driver selection.
t_d(off)	130 ns @ 40 A - ensures precise timing control in phase-shifted full-bridge and LLC resonant controllers.
trr (diode)	73 ns @ 40 A, 25°C - limits diode-induced voltage spikes and snubber losses in synchronous rectification stages.
R_th(j-c) (IGBT)	0.65 K/W - allows direct heatsink mounting with ≤100 W dissipation at ΔT = 65 K, supporting compact thermal layout.

Pinout & Package

IKW40N65ES5XKSA1 uses the PG-TO247-3 package with isolated collector tab (backside). The case serves as the collector terminal, enabling low-inductance high-current path routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control electrode; requires 15 V drive for full enhancement; 95 nC total charge defines gate driver sizing.
Pin 2 + Backside	Collector	Main high-side current path; backside metal pad provides low-inductance, high-current connection to heatsink/busbar.
Pin 3	Emiter	Reference node for gate drive and current sensing; internal emitter inductance is 13 nH (measured 5 mm from case).

Key Features

Feature	Design Value
TRENCHSTOP™ 5 trench-gate structure	Enables 1.35 V V_CE(sat) at 40 A while maintaining 130 ns t_d(off), balancing efficiency and switching speed.
Integrated RAPID 1 antiparallel diode	Rated for full 40 A forward current with soft recovery (Q_rr = 1.10 µC), eliminating need for external diode in half-bridge leg.
175°C maximum junction temperature	Supports operation in high-ambient environments (e.g., enclosed UPS cabinets) without forced air cooling.
JEDEC-qualified reliability	Validated for industrial power control applications per AEC-Q101 stress test profiles, ensuring long-term BOM stability.

Applications

Resonant Converters

Uninterruptible Power Supplies (UPS)

Use Scenario: Used in LLC half-bridge primary switches operating at 100–300 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated diode providing controlled turn-on via body diode conduction and low-loss turn-off.

Use Value: Soft recovery (trr = 73 ns) and low E_off = 0.40 mJ reduce dead-time sensitivity and improve ZVS window margin.

Use Scenario: Inverter stage of online double-conversion UPS delivering 3 kVA output with 96% efficiency.

IC Role / Device Role / Timing Role: Output bridge switch handling 40 A RMS current with 175°C T_vj rating enabling passive-cooled design.

Use Value: 1.35 V V_CE(sat) cuts conduction loss by 18% vs. prior-gen IGBTs, directly improving system efficiency at partial load.

Welding Converters

Mid-Frequency Induction Heating

Use Scenario: Primary-side switch in inverter-based IGBT welders with 20–50 kHz PWM and high di/dt demands.

IC Role / Device Role / Timing Role: Hard-switched IGBT with integrated diode conducting freewheeling current during off-state.

Use Value: 0.65 K/W R_th(j-c) and 13 nH internal emitter inductance minimize thermal stress and voltage ringing during 800 A/µs transients.

Use Scenario: Full-bridge inverter driving 20–80 kHz series-resonant tank in induction cooktops and industrial heaters.

IC Role / Device Role / Timing Role: Fast-turning IGBT enabling precise phase control with minimal tail current loss.

Use Value: E_ts = 1.26 mJ at 400 V/40 A reduces total switching loss by 22% over legacy S3 devices, lowering heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	Same die, identical electrical specs, but standard marking (no "XKSA1" suffix); RoHS-compliant, same PG-TO247-3 package.	No functional difference; XKSA1 denotes specific wafer lot/batch traceability per Infineon's internal logistics coding.	Select IKW40N65ES5 when full traceability is not required; identical performance and qualification.
IKW30N65ES5	Lower I_C = 30 A, reduced Q_G = 70 nC, same V_CE = 650 V and V_CE(sat) = 1.35 V; smaller chip area lowers cost and capacitance.	Better suited for 2–3 kW systems where lower current rating and faster switching (t_d(off) = 110 ns) are prioritized over headroom.	Choose IKW30N65ES5 for cost-sensitive, space-constrained designs below 3 kW; verify thermal margin at peak load.

Compared with IKW40N65ES5XKSA1, IKW40N65ES5 offers identical performance with simplified logistics tracking, while IKW30N65ES5 trades 25% current headroom for 26% lower gate charge and reduced system-level EMI - making it optimal for tightly regulated 2.5 kW resonant converters.

Availability

IKW40N65ES5XKSA1 is available at Aetrix Electronics and suitable for resonant converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW40N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IKW40N65ES5XKSA1 belongs to the TRENCHSTOP™ 5 IGBT family, engineered specifically for high-efficiency, high-frequency industrial power conversion - emphasizing soft switching, low V_CE(sat), and integrated diode co-packaging.

FAQ

What is the maximum gate-emitter voltage rating for IKW40N65ES5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs (duty cycle <1%). Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drive circuits must clamp to this limit using Zener diodes or active clamping.

Does IKW40N65ES5XKSA1 require a negative gate voltage for reliable turn-off?

No - the device achieves clean turn-off with 0 V gate drive due to its low tail current and optimized doping profile. However, applying −5 V to −8 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments like full-bridge inverters.

How does the integrated RAPID 1 diode differ from standard FRD diodes in terms of recovery behavior?

The RAPID 1 diode exhibits soft reverse recovery with controlled dirr/dt (−1500 A/µs) and low Q_rr (1.10 µC), avoiding abrupt current collapse that causes voltage spikes. Unlike hard-recovery FRDs, it minimizes snubber losses and EMI without requiring external RC snubbers in most 400 V bus applications.

Can IKW40N65ES5XKSA1 be paralleled for higher current capacity?

Yes - its positive V_CE(sat) temperature coefficient (increasing from 1.35 V at 25°C to 1.60 V at 125°C) enables stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <10°C ΔT between devices.

IKW40N65ES5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 79 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 40A

Power - Max:: 230 W

Switching Energy:: 860µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/130ns

Test Condition:: 400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr):: 73 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW40N65ES5XKSA1 FAQ

1.How can I place an order for IKW40N65ES5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW40N65ES5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW40N65ES5XKSA1 reliable?

The price and inventory of IKW40N65ES5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N65ES5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW40N65ES5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N65ES5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW40N65ES5XKSA1?

IKW40N65ES5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW40N65ES5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW40N65ES5XKSA1?

For technical support, including IKW40N65ES5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N65ES5XKSA1 requirements.

6.How does Aetrix verify that IKW40N65ES5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW40N65ES5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N65ES5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW40N65ES5XKSA1?

All IKW40N65ES5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N65ES5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW40N65ES5XKSA1 part is unused and in its original packaging.

Return procedure for IKW40N65ES5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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