Infineon Technologies IKW40N65ET7XKSA1

Overview

IKW40N65ET7XKSA1 from Infineon is a 650 V, 40 A low-loss IGBT7 Duopack with integrated ultra-soft fast-recovery anti-parallel diode, built on Trench and Fieldstop technology. It delivers 1.65 V typical V_CE(sat) at 40 A/15 V_GE, 0.59 mJ turn-off energy at 25 °C, and 175 °C max junction temperature - enabling high-efficiency 10–20 kHz switching in industrial inverters and UPS systems.

For engineers reviewing the IKW40N65ET7XKSA1 datasheet, IKW40N65ET7XKSA1 pinout, IKW40N65ET7XKSA1 application, or IKW40N65ET7XKSA1 equivalent, key selection criteria include its 650 V blocking voltage, 40 A rated current, low E_off and short tail current, soft diode recovery (trr ≤ 145 ns at 175 °C), and PG-TO247-3 package thermal resistance of 0.65 K/W (IGBT) and 0.9 K/W (diode).

Technical Context

This IGBT7 Duopack integrates a field-stop trench-gate IGBT and an optimized soft-recovery diode in a single PG-TO247-3 package. Its gate threshold voltage (V_GE(th)) ranges 4.3–5.7 V, and transconductance (g_fs) is 20.5 S - supporting robust gate drive design with ±20 V gate rating and 3 µs short-circuit withstand time at 150 °C.

The device uses Infineon's 7th-generation silicon for reduced conduction and switching losses: V_CE(sat) increases only marginally from 1.35 V (25 °C) to 1.6 V (175 °C), while E_off doubles from 0.59 mJ to 1.13 mJ across the same range - enabling stable operation in thermally demanding servo and solar string inverter stages.

Key Specifications

Pinout & Package

IKW40N65ET7XKSA1 is housed in a PG-TO247-3 package with isolated collector tab (backside). The three terminals are arranged linearly: Gate (G), Collector (C), and Emitter (E). The collector connects to both the IGBT die and the diode cathode; emitter serves as IGBT source and diode anode; gate controls IGBT conduction only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode switching applications.

Compared with IKW30N65ET7XKSA1, this part delivers 33% higher current capability without increasing footprint; versus IKW40N65H5XKSA1, it provides measurable gains in switching loss, diode softness, and long-term reliability validation - critical for solar and UPS deployments.

Availability

IKW40N65ET7XKSA1 is available at Aetrix Electronics and suitable for servo drives, industrial UPS systems, and solar string inverters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IKW40N65ET7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of high-voltage power device innovation.

This part belongs to Infineon's IGBT7 Duopack product line - engineered specifically for high-efficiency, high-reliability industrial motor drives, renewable energy inverters, and uninterruptible power supplies operating up to 175 °C junction temperature.

FAQ

What is the maximum gate-emitter voltage rating for IKW40N65ET7XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating of ±30 V for pulses ≤10 µs and duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation; gate drivers must include clamping or active regulation to stay within this limit during transients and Miller plateau crossing.

Does IKW40N65ET7XKSA1 require external freewheeling diodes?

No - it integrates a matched ultra-soft fast-recovery diode with 650 V V_RRM, 40 A forward rating, and 85 ns trr at 25 °C. This diode is co-optimized with the IGBT for minimal reverse recovery loss and voltage overshoot, eliminating need for discrete antiparallel diodes in standard inverter leg configurations.

How does the short-circuit withstand time vary with temperature and bus voltage?

At V_CC ≤ 330 V and T_vj = 100 °C, t_SC is 5 µs; at V_CC ≤ 400 V and T_vj = 150 °C, it drops to 3 µs. These values assume V_GE = 15 V and ≤1000 total events with ≥1 s interval - design must implement fast desaturation detection and gate shutdown within these limits to prevent destructive failure.

Can IKW40N65ET7XKSA1 be mounted directly to a heatsink without insulating pads?

Yes - the collector (C) terminal is electrically connected to the isolated metal tab (backside), which serves as both thermal interface and high-voltage output node. Mounting requires electrically isolating hardware (e.g., ceramic washers) or use of insulated mounting kits; direct metal-to-metal contact without isolation creates a safety hazard and circuit short.