Infineon Technologies IKW40N65F5AXKSA1
- Part No.:
- IKW40N65F5AXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IKW40N65F5AXKSA1.pdf
- Description:
- IGBT 650V 74A 255W PG-TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,443
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Product details
Overview
IKW40N65F5AXKSA1 from Infineon is a 650V, 40A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.6V VCE(sat) at 40A and 25°C, 95nC gate charge, and 175°C maximum junction temperature. Designed for hard-switching and resonant topologies in industrial DC/DC converters and battery chargers.
For engineers reviewing the IKW40N65F5AXKSA1 datasheet, IKW40N65F5AXKSA1 pinout, IKW40N65F5AXKSA1 application, or IKW40N65F5AXKSA1 equivalent, key selection criteria include VCE(sat) stability across temperature, diode reverse recovery performance (Qrr = 0.25–1.06 µC), switching energy (Ets = 0.10–0.62 mJ), and AEC-Q101 qualification for rugged power control designs.
Technical Context
This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with optimized carrier lifetime control to achieve low conduction loss and fast, soft switching. Its integrated RAPID 1 diode features low Qrr, controlled dIrr/dt (−640 A/µs max), and soft recovery-critical for reducing EMI and voltage overshoot in high-frequency converters.
The device operates with ±20V gate-emitter voltage rating and supports gate drive with 15Ω external resistors (RG(on)/RG(off)). Thermal design is enabled by 0.60 K/W IGBT and 1.80 K/W diode junction-to-case thermal resistance, allowing high-power density layouts when mounted on heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 650V - Supports 400V DC bus systems with 1.6× voltage margin for transient clamping and reliability. |
| IC (continuous) | 40A at TC = 25°C - Enables compact 2–3 kW converter stages without forced air cooling. |
| VCE(sat) | 1.6V @ 40A, 25°C - Reduces conduction loss to ~64W at full load, improving system efficiency. |
| QG | 95 nC - Determines gate driver current requirement (~6.3 A peak for 15 ns rise time). |
| Eoff | 0.10 mJ @ 5A / 400V - Low turn-off loss enables >100 kHz operation in ZVS/ZCS topologies. |
| trr (diode) | 31 ns @ 5A - Minimizes commutation losses and dv/dt-induced shoot-through risk. |
| Tvj(max) | 175°C - Allows derated operation up to 150°C case temperature in sealed enclosures. |
Pinout & Package
PG-TO247-3 package: isolated metal tab (collector), three leads in linear configuration. Mounting torque: 0.6 Nm (M3 screw). Not recommended for surface-mount assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring low-inductance gate loop; connects to driver IC output via <15Ω series resistor. |
| Pin 2 + Backside | Collector | Main high-side power terminal; backside metal tab provides primary thermal path to heatsink. |
| Pin 3 | Emitter | Power return and reference for gate drive; must be routed with minimal inductance to reduce voltage spikes. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated RAPID 1 diode | Soft reverse recovery (Qrr = 0.25 µC @ 5A) reduces EMI and snubber stress in bidirectional switching. |
| TRENCHSTOP™ 5 technology | Optimized trade-off between VCE(sat) and switching speed yields 0.10 mJ Eoff at 5A - 40% lower than prior-gen F4 devices. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing - suitable for industrial EVSE and traction auxiliaries. |
| Green RoHS-compliant package | Pb-free plating and halogen-free molding compound meet IPC-J-STD-609A Class 1 requirements for eco-design compliance. |
Applications
| Battery Charger | Industrial DC/DC Converter |
|---|---|
Use Scenario: On-board charger (OBC) PFC and DC/DC stage in 6.6 kW EV charging systems. IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC and phase-shifted full-bridge isolation stage. Use Value: 175°C Tvj(max) and soft diode recovery enable 100 kHz operation with <1.5% efficiency penalty vs. SiC at 400V bus. | Use Scenario: 3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side switch handling 40A peak current at 100 kHz with zero-voltage switching assist. Use Value: 95 nC QG and 0.60 K/W Rth(j-c) allow gate drive integration and direct heatsink mounting without thermal interface pads. |
| Uninterruptible Power Supply | Solar Inverter Auxiliary Stage |
Use Scenario: Bidirectional DC-link chopper in 10 kVA UPS inverters. IC Role / Device Role / Timing Role: Regenerative braking switch with reverse-conducting capability via integrated diode. Use Value: Diode Qrr = 0.54 µC @ 20A ensures <50 V overshoot during commutation, eliminating need for external snubbers. | Use Scenario: MPPT boost stage and auxiliary DC/DC for controller power in string inverters. IC Role / Device Role / Timing Role: Main switching element in 1.5 kW boost converter operating at 80–120 kHz. Use Value: 1.6 V VCE(sat) and 0.10 mJ Eoff at light load maintain >98.2% peak efficiency across 10–100% load range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N65ES5XKSA1 | Same 650V/40A rating but uses TRENCHSTOP™ 5 Enhanced Speed (ES5) variant with lower QG (75 nC) and higher VCE(sat) (1.75 V). | Better suited for >150 kHz ZVS designs where gate drive loss dominates; less optimal for hard-switched PFC. | Select when prioritizing gate drive efficiency over conduction loss in high-frequency resonant converters. |
| IGW40N65F5FKSA1 | Identical die but in PG-TO247-4L package with Kelvin emitter; adds separate low-inductance emitter sense pin. | Enables precise gate control under high di/dt; required for >200 kHz operation or critical shoot-through avoidance. | Choose when designing for >150 kHz hard-switched topologies with tight timing margins or digital gate drivers. |
Compared with IKW40N65ES5XKSA1, this part trades 0.15 V higher VCE(sat) for 20 nC lower QG; versus IGW40N65F5FKSA1, it lacks Kelvin emitter but offers lower cost and simpler layout for standard 100–120 kHz industrial converters.
Availability
IKW40N65F5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, industrial DC/DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.
Supply support for IKW40N65F5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's TRENCHSTOP™ 5 High-Speed IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial motor drives, solar inverters, and EV charging infrastructure.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
For hard-switching at 100 kHz with 40A load, RG = 15 Ω (both turn-on and turn-off) is validated per datasheet test conditions. Using >22 Ω increases td(off) beyond 225 ns at 150°C, risking cross-conduction in bridge configurations. Lower values down to 5 Ω are acceptable if gate driver peak current rating ≥10 A and layout inductance <20 nH.
Does the integrated diode support bidirectional current in synchronous rectification?
No - the RAPID 1 diode is antiparallel and unidirectional; it conducts only from emitter to collector. It cannot replace a synchronous MOSFET in low-loss rectification. Its role is freewheeling and reverse recovery during IGBT turn-off, not active rectification.
Is thermal pad soldering required for the backside collector tab?
Yes - the metal backside is electrically and thermally connected to the collector. It must be soldered or thermally interfaced to a grounded heatsink using conductive thermal paste or phase-change pad. Insulating pads void thermal specs and risk exceeding Rth(j-c) = 0.60 K/W.
How does Qrr variation with temperature affect snubber design?
Qrr increases from 0.25 µC at 25°C to 1.06 µC at 150°C - a 4.2× rise. Snubber RC networks designed for room-temperature recovery will be undersized at elevated temperatures, leading to voltage overshoot. Design must target worst-case Qrr at maximum operating Tvj (175°C), not ambient.
IKW40N65F5AXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 74 A
- Current - Collector Pulsed (Icm):
- 120 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 40A
- Power - Max:
- 250 W
- Switching Energy:
- 350µJ (on), 100µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 95 nC
- Td (on/off) @ 25°C:
- 19ns/165ns
- Test Condition:
- 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr):
- 73 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IKW40N65F5AXKSA1 FAQ
1.How can I place an order for IKW40N65F5AXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKW40N65F5AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKW40N65F5AXKSA1 reliable?
The price and inventory of IKW40N65F5AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N65F5AXKSA1 is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N65F5AXKSA1 transactions.
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IKW40N65F5AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKW40N65F5AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKW40N65F5AXKSA1?
For technical support, including IKW40N65F5AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N65F5AXKSA1 requirements.
6.How does Aetrix verify that IKW40N65F5AXKSA1 is sourced from the original manufacturer or authorized distributors?
All IKW40N65F5AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N65F5AXKSA1 meets industry standards.
7.What is the process for return or replacement of IKW40N65F5AXKSA1?
All IKW40N65F5AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N65F5AXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKW40N65F5AXKSA1 part is unused and in its original packaging.
Return procedure for IKW40N65F5AXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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