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Infineon Technologies IKW40N65H5FKSA1

Part No.:
IKW40N65H5FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW40N65H5FKSA1.pdf
Description:
IGBT 650V 74A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:850

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Product details

Overview

IKW40N65H5FKSA1 from Infineon is a 650V, 40A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in PG-TO247-3 package. It delivers 1.65V VCE(sat) at 40A and 25°C, supports 175°C maximum junction temperature, and achieves 19ns turn-on delay and 62ns diode reverse recovery time at 25°C - optimized for solar converters and UPS inverters.

For engineers reviewing the IKW40N65H5FKSA1 datasheet, IKW40N65H5FKSA1 pinout, IKW40N65H5FKSA1 application, or IKW40N65H5FKSA1 equivalent, key selection criteria include hard-switching energy efficiency (Ets = 0.14 mJ @ 5A), low gate charge (QG = 95 nC), thermal resistance (Rth(j-c) = 0.60 K/W), and JEDEC-qualified reliability for industrial power control.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with optimized carrier lifetime control to reduce switching losses while maintaining low conduction loss. Its integrated RAPID 1 diode features soft recovery (dIrr/dt = −700 A/µs @ 5A) and low Qrr (0.22 µC), minimizing voltage overshoot and EMI in high-frequency bridge legs.

The device operates across −40°C to +175°C junction range and is rated for 650V DC blocking with 120A pulsed collector current capability. Gate threshold voltage (VGE(th) = 3.2–4.8 V) ensures robust noise immunity, and ±30V transient gate-emitter rating supports reliable drive in noisy industrial environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating650 V - supports DC bus voltages up to 400 V in 3-phase inverters with 1.6× safety margin
IC Continuous40 A at TC = 25°C - enables compact heatsink design for 3–5 kW power stages
VCE(sat)1.65 V @ 40 A, 25°C - reduces conduction loss to ~66 W at full load, improving system efficiency
QG95 nC - allows use of standard 2–4 A gate drivers without excessive drive power dissipation
td(off)165 ns @ 25°C - enables switching frequencies up to 40 kHz in hard-switched PFC and inverter stages
trr (Diode)62 ns @ 20 A, 25°C - limits commutation voltage spike and snubber losses in synchronous rectification
Rth(j-c)0.60 K/W - permits direct mounting to heatsink with <1.2°C/W total thermal path for 125 W dissipation

Pinout & Package

IKW40N65H5FKSA1 uses the PG-TO247-3 package: insulated plastic case with isolated collector tab (backside), 3-pin through-hole configuration, and M3 screw-mounting interface. Thermal performance is enhanced by low Rth(j-c) and direct metal-to-heatsink contact via the collector tab.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal for MOS-controlled IGBT; requires 15 V nominal drive with ≤±30 V transient tolerance
Pin 2 & BacksideCollectorMain high-side power terminal; electrically connected to package backside for low-inductance heatsink coupling
Pin 3EmitteLow-side power return; carries full load current and diode freewheeling current in half-bridge operation

Key Features

FeatureDesign Value
TRENCHSTOP™ 5 IGBT dieReduces total switching energy (Ets) by 35% vs. H3 generation at 20 A, enabling higher frequency operation
RAPID 1 antiparallel diodeSoft reverse recovery (Irrm = 12.5 A, dIrr/dt = −700 A/µs) suppresses voltage ringing during commutation
175°C max junction temperatureEnables derating-free operation at 100°C ambient with forced-air cooling, extending system lifetime
JEDEC qualificationValidated for industrial power applications per JESD47 stress testing, including HTGB and uHAST
Pb-free RoHS complianceMeets EU Directive 2011/65/EU with matte tin lead plating, supporting lead-free reflow and wave soldering

Applications

Solar String InvertersUPS Inverter Stages

Use Scenario: DC–AC conversion in 3–6 kW residential photovoltaic inverters with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in unipolar PWM half-bridge; handles 400 V DC input and switches at 16–20 kHz.

Use Value: Low VCE(sat) and soft diode recovery reduce thermal stress and EMI filter size, meeting EN 61000-3-2 Class A.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery or grid input.

IC Role / Device Role / Timing Role: Output stage IGBT in 3-phase inverter; operates in hard-switched mode with 10–15 kHz PWM.

Use Value: 0.14 mJ total switching energy at 5 A enables >96% inverter efficiency at partial load, reducing cooling requirements.

Industrial Welding ConvertersMid-Frequency Induction Heaters

Use Scenario: IGBT-based inverter in 10–30 kW arc welding power supplies with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge; conducts 40 A peak with 100 µs pulses.

Use Value: 120 A pulsed current rating and 175°C Tvj support short-term overload without derating, improving duty-cycle flexibility.

Use Scenario: 20–50 kHz induction heating inverter driving series-resonant tank circuits for metal hardening.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (≥500 A/µs) and reverse recovery stress from parallel diode.

Use Value: RAPID 1 diode's 0.22 µC Qrr and soft recovery minimize capacitive turn-on loss and snubber dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65ES5Same 650 V/40 A rating but uses TRENCHSTOP™ IGBT5 + EmCon5 diode; lower VCE(sat) (1.55 V) and QG (75 nC)Better suited for ultra-high-efficiency 30–100 kHz resonant topologies due to reduced switching lossSelect when optimizing for minimum Eon + Eoff at light loads and requiring tighter gate drive timing control
FGH40N60UF600 V/40 A device with faster tf (10 ns) but higher VCE(sat) (1.8 V) and no integrated diodeRequires external fast diode; limited to ≤400 V DC bus; less robust under short-circuit conditionsChoose only for cost-sensitive 600 V systems where integrated diode is not required and thermal margin is ample

Compared with IKW40N65ES5 and FGH40N60UF, IKW40N65H5FKSA1 offers balanced conduction–switching trade-off, integrated soft-recovery diode, and proven field reliability in 400 V industrial inverters - making it optimal for solar, UPS, and welding applications demanding robustness and ease of layout.

Availability

IKW40N65H5FKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and industrial welding converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW40N65H5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IKW40N65H5FKSA1 belongs to the TRENCHSTOP™ 5 High-Speed Switching series, designed specifically for industrial motor drives, renewable energy inverters, and UPS systems requiring high efficiency, ruggedness, and thermal resilience.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 15 Ω for characterization. For 40 A operation at 20 kHz, a 10–22 Ω gate resistor balances switching speed and voltage overshoot. Lower values (<10 Ω) increase dV/dt stress on gate driver and parasitic inductance; higher values (>33 Ω) raise Eon/Eoff and thermal load. Use active Miller clamp if operating above 100 kHz.

Does IKW40N65H5FKSA1 require a negative gate voltage for turn-off?

No. The device is fully compatible with 0 V/15 V gate drive and does not require negative bias. Its VGE(th) (3.2–4.8 V) and low IGES (<100 nA) ensure safe turn-off at 0 V. Negative gate voltage (e.g., −5 V) may be used to improve noise immunity in high-dI/dt environments but is not necessary for functional operation.

Can this IGBT replace IKW40N65H3 in existing designs?

Yes - IKW40N65H5FKSA1 is a direct plug-and-play replacement for IKW40N65H3. It shares identical pinout, package (PG-TO247-3), voltage/current ratings, and thermal footprint. Key improvements include 25% lower Ets, 15% lower VCE(sat), and enhanced diode softness - all achievable without PCB or gate drive changes.

What is the short-circuit withstand time at 400 V bus voltage?

Per Infineon application note AN2015-05, IKW40N65H5FKSA1 sustains 10 µs short-circuit time at VCE = 400 V, Tvj = 150°C, and VGE = 15 V before entering desaturation. This enables implementation of fast-desat protection using standard comparators and blanking timers, without requiring external current sensors.

IKW40N65H5FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
74 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Power - Max:
255 W
Switching Energy:
390µJ (on), 120µJ (off)
Input Type:
Standard
Gate Charge:
95 nC
Td (on/off) @ 25°C:
22ns/165ns
Test Condition:
400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr):
62 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IKW40N65H5FKSA1 FAQ

1.How can I place an order for IKW40N65H5FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW40N65H5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKW40N65H5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N65H5FKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N65H5FKSA1 transactions.

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IKW40N65H5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW40N65H5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW40N65H5FKSA1?

For technical support, including IKW40N65H5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N65H5FKSA1 requirements.

6.How does Aetrix verify that IKW40N65H5FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW40N65H5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N65H5FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW40N65H5FKSA1?

All IKW40N65H5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N65H5FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW40N65H5FKSA1 part is unused and in its original packaging.

Return procedure for IKW40N65H5FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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