Infineon Technologies IKW40N65RH5XKSA1

Overview

IKW40N65RH5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete: a TRENCHSTOP™ 5 H5 IGBT co-packed with a half-rated 6th-generation CoolSiC™ Schottky diode in a single PG-TO247-3 package. It delivers 650 V collector-emitter voltage, 40 A rated collector current, and 175 °C maximum junction temperature. Its ultra-low switching losses enable high-efficiency hard-switching operation in industrial power converters.

For engineers reviewing the IKW40N65RH5XKSA1 datasheet, IKW40N65RH5XKSA1 pinout, IKW40N65RH5XKSA1 application, or IKW40N65RH5XKSA1 equivalent, key selection criteria include V_CE(sat) at 125 °C (1.85 V), total switching energy (0.28 mJ at 20 A/25 °C), diode forward voltage (1.35 V at 16 A/25 °C), thermal resistance R_th(j-c) (0.6 K/W for IGBT, 1.8 K/W for diode), and JEDEC-qualified reliability for industrial UPS and solar inverters.

Technical Context

This hybrid discrete integrates a silicon IGBT with optimized gate charge (95 nC) and low output capacitance (C_oes = 265 pF) alongside a SiC Schottky diode exhibiting zero reverse recovery charge and 1.35 V forward drop at 16 A. The co-packaged architecture eliminates external layout parasitics between switch and freewheeling device.

The device operates under hard-switching conditions with turn-off delay of 165 ns and fall time of 13 ns at 20 A/25 °C, and maintains stable V_CE(sat) drift (≤0.3 V increase from 25 °C to 175 °C) and E_off doubling (0.12 → 0.22 mJ) across that range - enabling predictable thermal design in continuous conduction mode topologies.

Key Specifications

Pinout & Package

Delivered in PG-TO247-3 package with isolated metal tab (collector-connected backside), standardized lead pitch and screw-mount compatibility. Thermal path optimized via direct collector-to-heatsink contact through backside metal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT + SiC diode applications.

Compared with IKW40N65ES5, the RH5 offers lower diode conduction loss and improved thermal stability; versus FF400R07ME4, it provides plug-and-play TO-247 compatibility and simplified gate drive, trading off scalability for design reuse and cost control in sub-15 kW systems.

Availability

IKW40N65RH5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, industrial UPS, and solar string inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW40N65RH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ Hybrid Discrete product line targets high-efficiency, high-reliability industrial power conversion where discrete-level integration of Si IGBTs and SiC diodes delivers optimal balance of performance, cost, and design simplicity.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG_on = RG_off = 15 Ω for characterization. For reliable operation, keep RG ≤ 22 Ω to maintain turn-off delay <200 ns and suppress oscillation. Higher values increase E_off disproportionately and risk shoot-through in bridge configurations due to slower voltage transitions.

Can IKW40N65RH5XKSA1 replace standard silicon IGBTs without circuit modification?

Yes - it is a drop-in replacement for TO-247-3 packaged 650 V/40 A silicon IGBTs. Pinout matches (G-C-E), V_GE threshold (3.2–4.8 V) and gate charge (95 nC) are compatible with existing 15 V gate drivers. No snubber or layout changes are required, though efficiency gains may allow downsizing heatsinks.

How does the integrated CoolSiC diode improve system-level reliability?

The 6th-gen CoolSiC diode eliminates reverse recovery charge (Q_rr ≈ 0), removing associated switching spikes, EMI, and localized heating in the IGBT during commutation. This reduces stress on both devices and extends lifetime in high-cycle applications like UPS and energy storage converters operating >10 years.

Is the backside collector electrically isolated from the mounting surface?

No - the backside metal tab is internally connected to the collector (C) terminal and must be mounted to an electrically isolated heatsink. Direct mounting to grounded metal chassis without insulation violates creepage/clearance requirements and risks short-circuit failure. Use Infineon-recommended ceramic or polymer insulating pads.