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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW40N65WR5XKSA1

Name: IKW40N65WR5XKSA1
Brand: Infineon Technologies
SKU: IKW40N65WR5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW40N65WR5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW40N65WR5XKSA1.pdf

Description:: IGBT TRENCH 650V 80A TO247-3

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Product details

Overview

IKW40N65WR5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 650 V collector-emitter voltage and 40 A continuous collector current at Tc = 130 °C. It features low V_CE(sat) (1.4–1.65 V), low turn-off energy (0.16–0.24 mJ), and optimized diode for zero-current-switching (ZCS) topologies. Used in high-efficiency welding inverters and PFC stages where compactness and thermal stability are critical.

For engineers reviewing the IKW40N65WR5XKSA1 datasheet, IKW40N65WR5XKSA1 pinout, IKW40N65WR5XKSA1 application, or IKW40N65WR5XKSA1 equivalent, key selection criteria include its positive temperature coefficient of V_CE(sat) enabling stable paralleling, low EMI due to controlled switching waveforms, and JESD-022 qualification for industrial reliability.

Technical Context

This RC-IGBT integrates an ultra-fast, soft-recovery anti-parallel diode on the same die, eliminating external diode placement and reducing stray inductance. Its gate charge (Q_G = 193 nC) and low C_res (20 pF) support efficient 20–50 kHz switching in resonant converters.

The device operates across –40 °C to +175 °C junction temperature, with thermal resistance R_th(j-c) = 0.65 K/W for the IGBT and 2.85 K/W for the diode-enabling high-power density designs when mounted on heatsinks with controlled case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Supports 400 V AC input PFC and 600 V DC bus systems without derating.
I_C (Tc = 130 °C)	40 A - Enables compact 5–8 kW inverter stages with forced-air cooling.
V_CE(sat) (Tvj = 175 °C)	1.65 V - Minimizes conduction loss and thermal stress under full-load, high-temp operation.
E_off (Tvj = 175 °C)	0.24 mJ - Reduces switching loss in ZCS/PWM hybrid topologies, improving efficiency >97%.
t_rr (Tvj = 175 °C)	153 ns - Ensures soft, low-overshoot diode recovery critical for EMI-sensitive welding arcs.
R_th(j-c) (IGBT)	0.65 K/W - Allows direct thermal coupling to heatsink; enables <100 °C ΔT at 115 W dissipation.
Q_G	193 nC - Matches standard 15 V gate drivers; supports robust gate control with RG = 20 Ω.

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting hole, 3-pin through-hole configuration. Case material: thermally conductive epoxy; lead finish: Pb-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus (+); carries full load current and handles 650 V blocking.
Gate (G)	Control input	High-impedance MOS-driven terminal requiring ±20 V max; 193 nC total charge dictates driver sizing.
Emitter (E)	Power return and reference node	Common node for IGBT and integrated diode; internal emitter inductance = 13 nH limits layout sensitivity.

Key Features

Feature	Design Value
Monolithic RC-diode	Eliminates discrete diode placement, reduces layout parasitics, and ensures matched thermal behavior with IGBT.
Positive V_CE(sat) tempco	Enables inherently stable current sharing in parallel configurations without external ballasting resistors.
Low EMI signature	Controlled dV/dt and soft diode recovery (trr = 153 ns @ 175 °C) suppress conducted noise in arc-welding EMI Class B environments.
JESD-022 qualified	Validated for moisture sensitivity level (MSL) 1 and long-term reliability in industrial power cycling applications.

Applications

Welding Inverter

PFC Stage

Use Scenario: High-frequency inverter for MMA and TIG welders operating at 20–40 kHz with variable arc load.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; integrated diode handles reverse current during ZCS transitions.

Use Value: Low E_off and soft trr reduce arc instability and spatter; 175 °C rating sustains peak duty cycles without thermal throttling.

Use Scenario: Three-phase active front-end (AFE) or single-phase boost PFC in UPS and industrial SMPS.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost topology; monolithic diode replaces fast recovery diode in synchronous rectification path.

Use Value: 650 V V_CE margin accommodates 400 V AC line surges; low V_F (1.5 V @ 175 °C) cuts conduction loss by ~15% vs. discrete solutions.

ZCS Resonant Converter

Induction Heating Half-Bridge

Use Scenario: LLC or series-resonant converter for high-efficiency battery chargers and server PSUs.

IC Role / Device Role / Timing Role: Primary-side switch with zero-current turn-on enabled by integrated diode's soft recovery and low Q_rr.

Use Value: 1.65 V V_CE(sat) at 175 °C maintains efficiency >96.5% at full load; low C_res (20 pF) minimizes capacitive losses at resonance.

Use Scenario: Medium-frequency (20–100 kHz) half-bridge driver for domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: High-side/low-side switch with integrated anti-parallel diode handling reactive tank current commutation.

Use Value: Matched IGBT/diode thermal tracking prevents localized hot spots; 13 nH internal emitter inductance simplifies gate loop layout for <10 ns timing skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N60B3	600 V rating, higher V_CE(sat) (1.9 V typ), no monolithic diode (requires external FRED)	Limited to lower bus voltages; less suitable for 400 V AC PFC with surge margin	Select only if 600 V rating suffices and layout allows discrete diode integration.
STMicroelectronics STGW40H65DFB	650 V, 40 A, but uses field-stop trench IGBT + separate diode; higher E_off (0.32 mJ)	Higher switching loss in ZCS mode; requires larger heatsink for same power density	Preferable only when legacy design uses ST's gate drive compatibility or footprint constraints apply.

Compared with IXGN40N60B3 and STGW40H65DFB, IKW40N65WR5XKSA1 delivers superior ZCS performance via monolithic integration, lower conduction loss at high temperature, and reduced system-level EMI-making it optimal for space-constrained, high-reliability welding and resonant converter designs.

Availability

IKW40N65WR5XKSA1 is available at Aetrix Electronics and suitable for welding inverters, active PFC modules, and ZCS resonant converters requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKW40N65WR5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive MCUs, and security ICs, with global manufacturing and R&D infrastructure.

IKW40N65WR5XKSA1 belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in industrial and energy infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 20 Ω for characterization. For safe operation, use 15–25 Ω to balance switching speed (minimizing E_ts) and gate oscillation risk. Values above 30 Ω increase td(off) beyond 500 ns at 175 °C, risking shoot-through in bridge configurations.

Can IKW40N65WR5XKSA1 replace a standard IGBT + discrete diode pair in existing designs?

Yes-its pinout matches standard TO-247 IGBTs (C-G-E), and the integrated diode eliminates the need for an external anti-parallel diode. However, layout must account for reduced internal emitter inductance (13 nH), which may require gate loop re-optimization to avoid overshoot.

Is the monolithic diode rated for continuous forward conduction?

Yes-the diode is rated for IF = 32 A at Tc = 25 °C and 19 A at Tc = 100 °C, with VF = 1.5 V at 175 °C. Its thermal resistance (R_th(j-c) = 2.85 K/W) is independently specified, confirming suitability for sustained bidirectional current in ZCS and inverter freewheeling paths.

Does this part support paralleling without current-sharing resistors?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current balancing. Testing shows <±5% current mismatch across 3 devices at 40 A total load and 150 °C case temperature, provided gate drive impedance and layout symmetry are matched within ±10%.

IKW40N65WR5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 40A

Power - Max:: 230 W

Switching Energy:: 770µJ (on), 160µJ (off)

Input Type:: Standard

Gate Charge:: 193 nC

Td (on/off) @ 25°C:: 42ns/432ns

Test Condition:: 400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr):: 112 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW40N65WR5XKSA1 FAQ

1.How can I place an order for IKW40N65WR5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW40N65WR5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW40N65WR5XKSA1 reliable?

The price and inventory of IKW40N65WR5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW40N65WR5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW40N65WR5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW40N65WR5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW40N65WR5XKSA1?

IKW40N65WR5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW40N65WR5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW40N65WR5XKSA1?

For technical support, including IKW40N65WR5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW40N65WR5XKSA1 requirements.

6.How does Aetrix verify that IKW40N65WR5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW40N65WR5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW40N65WR5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW40N65WR5XKSA1?

All IKW40N65WR5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW40N65WR5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW40N65WR5XKSA1 part is unused and in its original packaging.

Return procedure for IKW40N65WR5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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