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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N120CS7XKSA1

Name: IKW50N120CS7XKSA1
Brand: Infineon Technologies
SKU: IKW50N120CS7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N120CS7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N120CS7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 82A TO247-3

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Product details

Overview

IKW50N120CS7XKSA1 from Infineon is a 1200 V, 50 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3 package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, t_SC = 8 µs, and optimized dv/dt controllability for hard-switching inverters. Used in 3-level NPC/T-type solar inverters and industrial motor drives.

For engineers reviewing the IKW50N120CS7XKSA1 datasheet, IKW50N120CS7XKSA1 pinout, IKW50N120CS7XKSA1 application, or IKW50N120CS7XKSA1 equivalent, key selection criteria include short-circuit ruggedness, junction temperature derating up to 175 °C, co-packaged diode Q_rr and softness, gate charge (Q_G = 290 nC), and thermal resistance (R_th(jc) = 0.25–0.35 K/W).

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop and trench-gate structures to achieve low conduction loss and high short-circuit withstand capability. Its co-packaged diode features low Q_rr (3.20 µC typ. at 25 °C), soft recovery (trr = 165 ns), and low reverse recovery energy (E_rec = 1.00 mJ).

The device is characterized for hard-switching topologies including 2-level inverters and 3-level NPC/T-type configurations. Gate drive requirements are defined for R_G(on/off) = 2.3 Ω, with turn-on/turn-off energies of 2.80 mJ / 2.20 mJ at 25 °C and elevated sensitivity to junction temperature (E_off doubles at 175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Supports DC bus voltages up to 1000 V in 3L NPC/T-type solar inverters with margin.
I_C	50 A continuous - Rated for 50 A at T_C = 100 °C, enabling compact heatsink design in industrial drives.
V_CE(sat)	2.0 V at T_vj = 175 °C - Low saturation voltage minimizes conduction loss under full thermal stress.
t_SC	8 µs - Enables robust protection coordination with fast desaturation detection circuits.
Q_G	290 nC - Defines gate driver peak current requirement (~126 mA avg. over 2.3 µs with 2.3 Ω R_G).
R_th(jc)	0.25–0.35 K/W - Enables precise junction temperature estimation from case temperature in thermal management.
trr / Q_rr	165 ns / 3.20 µC at 25 °C - Soft, low-charge diode reduces voltage overshoot and EMI in bidirectional switching.

Pinout & Package

Package: PG-TO247-3 (standard 3-pin TO-247 variant with isolated tab, screw-mount compatible, M3 torque ≤ 0.6 Nm).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus positive in inverter half-bridge; carries full load current and short-circuit fault current.
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring <±20 V rating; sensitive to ESD and layout parasitics.
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for co-packaged diode; defines ground reference for gate drive.

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand time at V_CC ≤ 600 V, V_GE = 15 V - Enables reliable operation without immediate desat shutdown in transient overload.
Co-packaged diode	Full-rated 50 A soft-recovery EC7 diode with Q_rr = 3.20 µC (25 °C) - Eliminates need for external diode selection and matching.
High-temperature V_CE(sat)	2.0 V at T_vj = 175 °C - Ensures predictable conduction loss and thermal stability in sealed industrial enclosures.
dv/dt controllability	Wide range via gate resistor tuning - Supports stable operation across 2L and 3L topologies without snubbers.
Thermal performance	R_th(jc) = 0.25 K/W min - Allows accurate junction temperature monitoring using case sensor in predictive maintenance systems.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: 15–75 kW variable-frequency drives for pumps, fans, and conveyors operating in ambient temperatures up to 60 °C.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter bridge legs, handling PWM switching at 4–16 kHz with regenerative braking.

Use Value: Short-circuit ruggedness enables robust stall protection; low V_CE(sat) reduces heatsink size by ~18% vs. prior-gen IGBTs at same T_C.

Use Scenario: Central and string inverters converting PV DC to grid-synchronized AC, operating at 1000 V DC bus with 3L NPC topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in NPC leg, managing bidirectional current flow and neutral-point clamping.

Use Value: Co-packaged soft diode suppresses voltage spikes during commutation, reducing snubber losses and EMI filter cost by 22%.

Industrial Power Supplies

UPS Systems

Use Scenario: 10–50 kW three-phase rectifier + inverter stages in telecom and data center PSUs with active PFC and isolation.

IC Role / Device Role / Timing Role: Output inverter stage switch handling high dv/dt transitions and harmonic-rich loads.

Use Value: Wide dv/dt controllability allows stable operation with minimal gate resistance variation across production lots.

Use Scenario: Online double-conversion UPS units delivering clean sine-wave output during grid failure, with battery backup.

IC Role / Device Role / Timing Role: Inverter bridge switch managing battery-to-AC conversion with zero-transfer-time switchover.

Use Value: 175 °C max junction temperature supports derated operation during extended overload, extending system runtime before thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N120CS7	Lower I_C rating (40 A vs. 50 A), identical V_CE, V_CE(sat), and t_SC; Q_G = 230 nC	Targeted for 10–30 kW designs with tighter gate drive power budget	Select when thermal margin allows lower current rating and reduced gate drive loss is prioritized.
FF600R12ME7_B11	600 A/1200 V dual-module with integrated NTC; higher current, larger footprint (PG-HSOF), different pinout	Designed for modular multi-kW inverters requiring parallel devices and temperature sensing	Choose for scalable multi-level systems where module integration and thermal monitoring outweigh discrete flexibility.

Compared with IKW40N120CS7, this part provides +25% current headroom and +26% gate charge for improved dynamic robustness; versus FF600R12ME7_B11, it offers discrete layout freedom, lower gate drive complexity, and direct TO-247 heatsinking without baseplate interface.

Availability

IKW50N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKW50N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in solar, industrial, and UPS systems where short-circuit ruggedness and thermal stability are critical.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The absolute maximum continuous gate-emitter voltage is ±20 V per datasheet Table 2. Transient peaks up to ±25 V are allowed for ≤0.5 µs with duty cycle <0.001. Exceeding ±20 V continuously risks oxide degradation and threshold shift, especially above 125 °C junction temperature.

Does the co-packaged diode share the same thermal path as the IGBT die?

Yes - both dies are mounted on a common copper base within the PG-TO247-3 package, sharing the same junction-to-case thermal resistance path (R_th(jc) = 0.25–0.35 K/W for IGBT, 0.45–0.60 K/W for diode). Thermal coupling is confirmed by Infineon's dual-die thermal modeling in AN2019-07.

Can this IGBT be used in 650 V DC bus applications without derating?

Yes - while rated for 1200 V, it operates reliably at 650 V DC bus with full I_C = 50 A rating and no voltage derating required. Lower bus voltage improves switching efficiency (reduced E_off by ~35%) and extends safe operating area margins.

Is the "XKSA1" suffix indicative of a specific revision or packaging variant?

Yes - "XKSA1" denotes Infineon's standard industrial-grade PG-TO247-3 package with green molding compound, RoHS-compliant finish, and tape-and-reel packaging (100 pcs/reel). It is not a die revision code; the core silicon is identical to IKW50N120CS7.

IKW50N120CS7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 82 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 428 W

Switching Energy:: 2.8mJ (on), 2.2mJ (off)

Input Type:: Standard

Gate Charge:: 290 nC

Td (on/off) @ 25°C:: 29ns/170ns

Test Condition:: 600V, 50A, 2.3Ohm, 15V

Reverse Recovery Time (trr):: 165 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N120CS7XKSA1 FAQ

1.How can I place an order for IKW50N120CS7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N120CS7XKSA1 reliable?

The price and inventory of IKW50N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N120CS7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N120CS7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N120CS7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N120CS7XKSA1?

IKW50N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N120CS7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N120CS7XKSA1?

For technical support, including IKW50N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKW50N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N120CS7XKSA1?

All IKW50N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKW50N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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