Infineon Technologies IKW50N60H3FKSA1

Overview

IKW50N60H3FKSA1 from Infineon is a 600 V, 50 A high-speed IGBT in Trench and Fieldstop technology with integrated soft-fast anti-parallel diode, rated for 175 °C junction operation, optimized for high-frequency switching in industrial power converters and UPS systems.

For engineers reviewing the IKW50N60H3FKSA1 datasheet, IKW50N60H3FKSA1 pinout, IKW50N60H3FKSA1 application, or IKW50N60H3FKSA1 equivalent, key selection criteria include V_CE(sat) = 1.85 V at 25 °C, E_off = 0.91 mJ, t_r = 37 ns, trr = 130 ns, and PG-TO247-3 package thermal resistance R_th(j–c) = 0.45 K/W.

Technical Context

This IGBT employs TRENCHSTOP™ third-generation architecture to simultaneously minimize conduction loss (V_CE(sat) = 1.85 V) and switching loss (E_on = 1.45 mJ, E_off = 0.91 mJ), while maintaining soft reverse recovery (trr = 130 ns, Q_rr = 0.88 µC) in the co-packaged diode.

It supports short-circuit ruggedness up to 5 µs at 150 °C with ≤1000 allowed events, operates across –40 °C to +175 °C junction range, and delivers 100 A DC collector current at T_C = 25 °C with P_tot = 333 W.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting screw hole and standard leadframe layout for industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGN50N60A3 and STGW50H65DFB, IKW50N60H3FKSA1 offers superior trade-off between conduction loss, switching loss, and diode softness-critical for high-efficiency, high-reliability industrial UPS and welding systems operating continuously at elevated temperatures.

Availability

IKW50N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, and high-frequency motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IKW50N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's TRENCHSTOP™ High-Speed IGBT series, designed specifically for industrial power conversion systems demanding high efficiency, thermal robustness, and reliable short-circuit behavior at switching frequencies above 10 kHz.

FAQ

What is the maximum allowable gate-emitter voltage for IKW50N60H3FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dV/dt events.

Does IKW50N60H3FKSA1 require a negative gate drive voltage?

No, it does not require negative gate drive; however, applying –5 V to –10 V during off-state improves noise immunity and prevents false turn-on in high-dV/dt environments such as welding inverters or multi-level converters with fast bus transients.

Can IKW50N60H3FKSA1 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (increasing from 1.85 V at 25 °C to 2.25 V at 175 °C) enables inherent current sharing when paralleled with matched units, provided gate drive impedance and PCB layout symmetry are tightly controlled.

What is the typical gate charge requirement for full switching?

The total gate charge Q_G is 315 nC at V_GE = 0 V to 15 V, with 105 nC needed to reach threshold (V_GE(th)) and 210 nC for Miller plateau transition. This determines gate driver peak current capability: ≥2.5 A is recommended for 100 ns switching transitions.