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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N60TAFKSA1

Name: IKW50N60TAFKSA1
Brand: Infineon Technologies
SKU: IKW50N60TAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N60TAFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N60TAFKSA1.pdf

Description:: IGBT TRENCH/FS 600V 80A TO247-3

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Product details

Overview

IKW50N60TAFKSA1 from Infineon is a 600 V, 50 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO247-3 package, designed for high-efficiency frequency converters and UPS systems. It delivers 1.5 V typical V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time under V_GE = 15 V, V_CC ≤ 400 V.

For engineers reviewing the IKW50N60TAFKSA1 datasheet, IKW50N60TAFKSA1 pinout, IKW50N60TAFKSA1 application, or IKW50N60TAFKSA1 equivalent, key selection criteria include its low conduction loss, soft fast-recovery anti-parallel diode, tight parameter distribution, and JEDEC-qualified ruggedness for industrial motor drives and backup power systems.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve high switching speed while maintaining temperature-stable V_CE(sat) (positive tempco) and low EMI. Its integrated emitter-controlled diode features 143 ns t_rr at 25°C and 205 ns at 175°C, enabling reduced snubber requirements in hard-switched topologies.

The device operates with ±20 V gate-emitter voltage rating, 310 nC total gate charge, and exhibits robust safe operating area up to 600 V with 150 A pulsed collector current capability - validated across -40°C to +175°C junction range and qualified per JESD22-A108.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports DC bus voltages up to 400 V in three-phase inverters with 50% safety margin
I_C	50 A continuous - rated for sustained output in 15–25 kW motor drives at T_C = 100°C
V_CE(sat)	1.5 V (typ, 25°C) - reduces conduction loss by ~30% vs. standard 600 V IGBTs at 50 A
t_SC	5 µs - enables reliable short-circuit protection using fixed-time blanking without desat detection
Q_G	310 nC - determines gate driver peak current requirement (~2.2 A for 140 ns rise time)
t_rr (diode)	143 ns (25°C), 205 ns (175°C) - minimizes reverse recovery energy and cross-conduction risk in bridge legs
R_thJC (IGBT)	0.45 K/W - allows 333 W power dissipation at ΔT = 150 K, supporting forced-air cooling designs

Pinout & Package

PG-TO247-3 package: isolated tab (collector), vertical mounting with 2.54 mm lead pitch, RoHS-compliant Pb-free plating, rated for 260°C soldering (10 s).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Emitter (E)	Main current return path; connects to DC-link negative or motor phase return; low-inductance layout critical for di/dt stability
Pin 2 (center)	Collector (C)	High-side switch node; tied to DC-link positive or motor phase output; electrically connected to metal tab
Pin 3 (right)	Gate (G)	Control input; requires <100 nH gate loop inductance and 7 Ω external resistor for optimized 299 ns t_d(off)

Key Features

Feature	Design Value
Low V_CE(sat) with positive tempco	Enables parallel operation without current-sharing resistors due to inherent thermal balancing
Soft, fast-recovery anti-parallel diode	Reduces voltage overshoot and EMI during commutation; eliminates need for external snubbers in many 10–20 kHz designs
JEDEC-qualified ruggedness	Validated for >1000 short-circuit events (5 µs each) with >1 s recovery - suitable for mission-critical UPS applications
TRENCHSTOP™ + Fieldstop architecture	Delivers 3140 pF C_iss and 93 pF C_rss, enabling high dV/dt immunity (>10 kV/µs) and stable gate control under noisy conditions
175°C max junction temperature	Supports compact heatsink design and extended lifetime in sealed enclosures with ambient up to 85°C

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 15–22 kW HVAC compressors and pump drives operating at 8–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching element in 6-pulse inverter leg; handles bidirectional reactive power flow with integrated diode freewheeling.

Use Value: 1.5 V V_CE(sat) cuts conduction losses by 2.1 W per device vs. legacy 600 V IGBTs, improving system efficiency from 96.2% to 96.7% at full load.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch converting battery DC to regulated AC; synchronized to grid or internal oscillator with precise dead-time control.

Use Value: 5 µs short-circuit withstand time enables deterministic fault response within 3 switching cycles, meeting UL 1778 fault-clearing requirements.

Solar String Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in 10–15 kW string inverters with transformerless topology and 18–22 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; conducts 50 A RMS with 100 A peak during MPPT transients.

Use Value: Soft diode recovery (Q_rr = 1.8 µC @ 25°C) suppresses voltage spikes during zero-crossing commutation, reducing filter capacitor stress by 35%.

Use Scenario: Resonant half-bridge in 12–18 kW induction cooktops operating at 20–50 kHz with variable load coupling.

IC Role / Device Role / Timing Role: High-frequency switching device controlling resonant tank current; subjected to rapid di/dt (>5 kA/µs) and high dv/dt.

Use Value: Low C_rss (93 pF) and high dV/dt immunity minimize Miller-induced turn-on risk, eliminating need for negative gate bias in high-noise environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H60DLF	600 V / 40 A; 1.7 V V_CE(sat); 3.5 µs t_SC; TO-247-3 package	Limited to ≤12 kW drives; lower current rating requires derating in UPS inverters above 10 kVA	Select when cost sensitivity outweighs 10 A current headroom and 1.5 µs t_SC margin
IXYS IXGN50N60A3	600 V / 50 A; 1.6 V V_CE(sat); no integrated diode; separate ultrafast diode required	Requires discrete diode layout and additional gate drive isolation; higher board space and BOM count	Select when diode performance must be independently optimized (e.g., SiC Schottky pairing)

Compared with STGW40H60DLF and IXGN50N60A3, IKW50N60TAFKSA1 provides superior current headroom, built-in diode integration, and longer short-circuit tolerance - simplifying inverter design for 15–25 kW industrial systems where reliability and thermal margin are prioritized over minimal BOM cost.

Availability

IKW50N60TAFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified ruggedness.

Supply support for IKW50N60TAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

The TRENCHSTOP™ IGBT series targets high-efficiency, high-reliability industrial power conversion - specifically engineered for motor drives, UPS, renewable energy inverters, and welding equipment demanding low loss, soft switching, and extended temperature operation.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175°C junction temperature?

A 7 Ω external gate resistor is specified in the datasheet for optimal switching times (t_d(off) = 341 ns, t_f = 55 ns) at T_j = 175°C. Increasing beyond 10 Ω extends fall time nonlinearly and raises E_off by >40%, risking thermal overstress during repetitive switching. For gate drivers with limited peak current, use 5–7 Ω with active Miller clamp.

Can IKW50N60TAFKSA1 be paralleled without external emitter resistors?

Yes - its positive temperature coefficient of V_CE(sat) ensures natural current sharing across devices. Parallel operation has been validated with ≤5% current imbalance at 100 A total load and T_j = 150°C. Maintain matched gate loop inductance (<5 nH difference) and identical heatsink contact resistance for stable thermal coupling.

Is the integrated diode suitable for regenerative braking energy recovery in servo drives?

Yes - the Emitter Controlled HE diode supports 100 A continuous forward current at T_C = 25°C and exhibits soft reverse recovery (I_rrm = 27.7 A, t_b = 45 ns). Its Q_rr of 1.8 µC at 25°C and 4.3 µC at 175°C enables efficient regeneration without excessive voltage overshoot when paired with 1 µH stray inductance.

Does this part require negative gate voltage for robust noise immunity in high-dV/dt environments?

No - the low C_rss (93 pF) and high Miller immunity (C_iss/C_rss = 33.8) allow stable operation with 0 V to +15 V gate drive only. Negative bias is unnecessary unless system-level dV/dt exceeds 15 kV/µs; in such cases, layout optimization (ground plane, gate routing) is more effective than added bias circuitry.

IKW50N60TAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 333 W

Switching Energy:: 2.6mJ

Input Type:: Standard

Gate Charge:: 310 nC

Td (on/off) @ 25°C:: 26ns/299ns

Test Condition:: 400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr):: 143 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW50N60TAFKSA1 FAQ

1.How can I place an order for IKW50N60TAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N60TAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N60TAFKSA1 reliable?

The price and inventory of IKW50N60TAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N60TAFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N60TAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N60TAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N60TAFKSA1?

IKW50N60TAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N60TAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N60TAFKSA1?

For technical support, including IKW50N60TAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N60TAFKSA1 requirements.

6.How does Aetrix verify that IKW50N60TAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N60TAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N60TAFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N60TAFKSA1?

All IKW50N60TAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N60TAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N60TAFKSA1 part is unused and in its original packaging.

Return procedure for IKW50N60TAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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