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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N60TFKSA1

Name: IKW50N60TFKSA1
Brand: Infineon Technologies
SKU: IKW50N60TFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N60TFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N60TFKSA1.pdf

Description:: IGBT TRENCH FS 600V 80A TO247-3

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Product details

Overview

IKW50N60TFKSA1 from Infineon is a 600 V, 50 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO247-3 package, designed for high-efficiency frequency converters and UPS systems. It delivers 1.5 V typical V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time under V_GE = 15 V, V_CC ≤ 400 V conditions.

For engineers reviewing the IKW50N60TFKSA1 datasheet, IKW50N60TFKSA1 pinout, IKW50N60TFKSA1 application, or IKW50N60TFKSA1 equivalent, key selection criteria include its low conduction loss, soft fast-recovery anti-parallel diode (t_rr = 143 ns @ 25°C), tight parameter distribution, and JEDEC1-qualified ruggedness for industrial motor drives and uninterruptible power supplies.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve high switching speed while maintaining temperature-stable V_CE(sat) with a positive coefficient and low EMI generation. Its integrated anti-parallel diode features emitter control for soft recovery and reduced Q_rr (1.8 µC @ 25°C) and peak reverse current (27.7 A).

The device operates across -40°C to +175°C junction range, supports 150 A pulsed collector current, and exhibits 0.45 K/W IGBT thermal resistance (junction-to-case). Gate charge is 310 nC at V_CC = 480 V, enabling efficient gate drive design with moderate external R_G.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports DC bus voltages up to 400 V in 3-phase inverters with margin
I_C Continuous	50 A @ T_C = 25°C - defines steady-state current capability with heatsink cooling
V_CE(sat)	1.5 V (typ.) @ T_j = 25°C - enables low conduction loss and reduced thermal stress
t_SC	5 µs @ V_GE = 15 V - provides robust short-circuit protection window for fault handling
Q_G	310 nC - determines gate driver power requirement and switching speed trade-off
t_rr (Diode)	143 ns @ T_j = 25°C - minimizes reverse recovery losses and voltage overshoot
R_thJC (IGBT)	0.45 K/W - enables precise junction temperature estimation from case measurement

Pinout & Package

Package: PG-TO247-3 - industry-standard 3-pin through-hole package with isolated tab, optimized for high-power thermal and electrical performance in industrial modules and discrete designs.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ bus; carries full load current and must be routed with low-inductance layout
Gate (G)	Control input for IGBT turn-on/off	Requires stable ±20 V rating and low-impedance drive; sensitive to noise and ringing
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT and anti-parallel diode; critical for Kelvin sensing in high-accuracy applications

Key Features

Feature	Design Value
Low V_CE(sat)	1.5 V typ. at 50 A reduces conduction loss by ~30% vs. standard 600 V IGBTs
Soft fast-recovery diode	143 ns t_rr, 1.8 µC Q_rr lowers EMI and snubber stress in bridge legs
Positive V_CE(sat) tempco	Enables inherent current sharing in parallel configurations without external balancing
175°C max T_j	Supports higher power density and extended operation in compact thermal envelopes
JEDEC1 qualification	Validated for industrial UPS and frequency converter reliability under real-world stress profiles

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in HVAC compressors and pump VFDs operating at 4–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional energy flow with integrated diode commutation.

Use Value: Low V_CE(sat) and soft diode reduce system losses by 8–12% versus legacy 600 V IGBTs, improving efficiency at partial load.

Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave under grid failure.

IC Role / Device Role / Timing Role: High-reliability power switch in full-bridge topology; manages battery-to-AC conversion with low THD requirements.

Use Value: 5 µs short-circuit withstand time and 175°C rating ensure fail-safe operation during output faults and thermal transients.

Solar String Inverters

Induction Heating Systems

Use Scenario: DC-AC stage in single-phase transformerless solar inverters with MPPT tracking and reactive power support.

IC Role / Device Role / Timing Role: High-voltage switching element in H-bridge; conducts 50 A RMS with low switching loss at 16–20 kHz.

Use Value: Tight parameter distribution ensures consistent channel matching across production batches, simplifying thermal derating.

Use Scenario: Resonant half-bridge in medium-frequency (20–50 kHz) induction cooktops and industrial heating coils.

IC Role / Device Role / Timing Role: Fast-switching power switch with integrated diode for zero-voltage switching (ZVS) assistance.

Use Value: Low gate charge (310 nC) and high dV/dt immunity enable reliable ZVS operation with minimal dead-time optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60T	40 A rated current, lower I_C and P_tot; identical V_CE, V_CE(sat), and t_SC	Lower thermal mass suits smaller heatsinks in <2 kW inverters	Select when system peak current remains ≤40 A and space-constrained thermal design is prioritized
IKW50N65ES5	650 V rating, higher V_CE(sat) (1.65 V), improved SOA at elevated V_CE	Better margin for 450–500 V DC bus systems; slightly higher conduction loss	Choose for 650 V bus architectures requiring enhanced overvoltage robustness in harsh grid environments

Compared with IKW40N60T and IKW50N65ES5, IKW50N60TFKSA1 offers optimal balance of 50 A current handling, 600 V rating, and lowest V_CE(sat)-making it preferred for cost-sensitive, thermally demanding 3–5 kW industrial inverters where 400 V DC bus is standard.

Availability

IKW50N60TFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IKW50N60TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification aligned to ISO/TS 16949 and IATF 16949 standards.

The TRENCHSTOP™ IGBT series targets high-efficiency industrial power conversion, emphasizing low-loss switching, rugged short-circuit behavior, and integrated diode optimization for motor control and UPS applications.

FAQ

What is the maximum allowable gate-emitter voltage for IKW50N60TFKSA1?

The absolute maximum gate-emitter voltage is ±20 V per datasheet specifications. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent unintended turn-on during high dv/dt events.

Does IKW50N60TFKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery Emitter Controlled HE diode rated for 100 A continuous forward current at T_C = 25°C. This eliminates need for discrete antiparallel diodes in standard inverter topologies, reducing PCB area and parasitic inductance.

How does junction temperature affect V_CE(sat) in IKW50N60TFKSA1?

V_CE(sat) increases with junction temperature due to its positive temperature coefficient: from 1.5 V at 25°C to 1.9 V at 175°C (typical). This behavior enables natural current sharing in paralleled devices and improves thermal stability during overload conditions.

Can IKW50N60TFKSA1 be used in hard-switched PFC circuits?

It is not recommended for boost PFC stages due to relatively high Q_rr (1.8 µC) and t_rr (143 ns) compared to dedicated PFC IGBTs or SiC MOSFETs. Its design prioritizes motor drive and UPS inverter efficiency-not ultra-fast unidirectional switching-so use in PFC may increase losses and EMI.

IKW50N60TFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 333 W

Switching Energy:: 2.6mJ

Input Type:: Standard

Gate Charge:: 310 nC

Td (on/off) @ 25°C:: 26ns/299ns

Test Condition:: 400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr):: 143 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW50N60TFKSA1 FAQ

1.How can I place an order for IKW50N60TFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N60TFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N60TFKSA1 reliable?

The price and inventory of IKW50N60TFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N60TFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N60TFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N60TFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N60TFKSA1?

IKW50N60TFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N60TFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N60TFKSA1?

For technical support, including IKW50N60TFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N60TFKSA1 requirements.

6.How does Aetrix verify that IKW50N60TFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N60TFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N60TFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N60TFKSA1?

All IKW50N60TFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N60TFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N60TFKSA1 part is unused and in its original packaging.

Return procedure for IKW50N60TFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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