Infineon Technologies IKW50N65EH5XKSA1

Overview

IKW50N65EH5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT co-packed with a full-rated RAPID 1 fast/soft antiparallel diode in PG-TO247-3 package. It delivers 1.95 V V_CE(sat) at 175 °C, 120 nC total gate charge, and 81 ns diode reverse recovery time at 25 °C - optimized for hard-switching and resonant topologies in solar inverters and UPS systems.

For engineers reviewing the IKW50N65EH5XKSA1 datasheet, IKW50N65EH5XKSA1 pinout, IKW50N65EH5XKSA1 application, or IKW50N65EH5XKSA1 equivalent, key selection criteria include junction temperature capability (175 °C), low switching losses (E_on = 2 mJ, E_off = 0.6 mJ @ 150 °C), and integrated diode softness for reduced EMI in mid-to-high-frequency converters.

Technical Context

This device implements TRENCHSTOP™ 5 IGBT cell architecture with field-stop design and optimized carrier lifetime control, enabling low conduction loss while maintaining robust short-circuit withstand time (≥10 µs). The integrated RAPID 1 diode features tailored minority-carrier lifetime and soft recovery (trr = 108 ns @ 150 °C, Irrm = 36 A) to minimize voltage overshoot and oscillation during turn-off commutation.

The PG-TO247-3 mechanical layout supports low-inductance mounting with collector connected to backside metal and emitter/gate on front-side pins. Thermal resistance is specified as R_th(j-c) = 0.55 K/W (IGBT) and 0.63 K/W (diode), enabling high-power density designs up to 138 W at T_c = 100 °C.

Key Specifications

Pinout & Package

Package: PG-TO247-3 - insulated plastic case with isolated collector tab (backside metal), standard TO-247 footprint, M3 screw mount, 0.6 Nm max torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 650 V IGBT applications.

Compared with IKW40N65ES5XKSA1, this part delivers 25% higher current capability at identical V_CE and thermal limits; versus IKW50N65ES5XKSA1, it trades slightly higher diode recovery loss for lower unit cost and proven field reliability in solar/UPS deployments.

Availability

IKW50N65EH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, industrial welding converters, and mid-frequency induction heaters requiring stable component supply and long-term production continuity.

Supply support for IKW50N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in solar, UPS, and industrial motor drives - emphasizing low-loss switching, rugged SOA, and integrated diode performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG_on = RG_off = 12 Ω for characterization. For safe operation, Infineon recommends RG ≤ 22 Ω to limit dv/dt-induced false turn-on and maintain t_d(off) ≤ 203 ns at 150 °C. Higher values increase switching losses and risk latch-up under high di/dt conditions.

Can IKW50N65EH5XKSA1 replace IKW50N65ES5XKSA1 in existing designs?

Yes, it is a direct drop-in replacement in terms of pinout, voltage/current ratings, and thermal footprint. However, the RAPID 1 diode has higher Q_rr (2.6 µC vs. 1.9 µC) and longer trr (108 ns vs. 65 ns), so EMI filtering may require minor adjustment in ultra-sensitive applications.

Is the backside collector electrically isolated from the mounting surface?

No - the collector is directly connected to the exposed metal tab on the backside. This requires an electrically insulating thermal interface (e.g., ceramic washer or silicone pad) when mounted to a grounded heatsink. The front-side C pin is internally bonded to the same collector potential.

What is the short-circuit withstand time under typical operating conditions?

Per Infineon application note AN2019-04, the device sustains short-circuit conditions for ≥10 µs at V_CE = 400 V, T_vj = 150 °C, and V_GE = 15 V. This enables robust protection response in inverters using DESAT detection with <1 µs propagation delay.